Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
82 words
An electrostatic chuck for holding a substrate in a process chamber, the electrostatic chuck comprising (a) an electrostatic member comprising a dielectric covering an electrode, the dielectric having a receiving surface for receiving the substrate; and (b) a pad positioned below the electrostatic member, the pad comprising a disc of thermally insulating material having a diameter smaller than a diameter of the substrate to control thermal transfer rates from a portion of the substrate during processing of the substrate in the chamber.
Claim 2
Dependent Claim
82 words
An electrostatic chuck for holding a substrate in a process chamber, the electrostatic chuck comprising (a) an electrostatic member comprising a dielectric covering an electrode, the dielectric having a receiving surface for receiving the substrate; and (b) a pad positioned below the electrostatic member, the pad comprising a disc of thermally insulating material having a diameter smaller than a diameter of the substrate to control thermal transfer rates from a portion of the substrate during processing of the substrate in the chamber.
Claim 3
Dependent Claim
58 words
The electrostatic chuck of claim 1 further comprising a base below the electrostatic member, the base having a first thermal resistance R B and wherein the pad comprises a second thermal resistance R P that is sufficiently higher or lower than the first thermal resistance R B of the base, to provide predetermined temperatures across the substrate surface.
Claim 4
Dependent Claim
38 words
The electrostatic chuck of claim 2 wherein the second thermal resistance R P is such that the difference in thermal resistance ΔR=R P -R B is sufficiently high to maintain substantially the same temperatures across the substrate surface.
Claim 5
Dependent Claim
47 words
The electrostatic chuck of claim 2 wherein the second thermal resistance R P is such that a difference in thermal resistance ΔR=R P -R B is sufficiently high to provide a temperature profile having temperatures that differ by 0° C. to 10° C. across the substrate surface.
Claim 6
Dependent Claim
24 words
The electrostatic chuck of claim 4 wherein the difference in thermal resistance ΔR=R P -R B is from about 10 to about 1000 K/W.
Claim 7
Dependent Claim
33 words
The electrostatic chuck of claim 2 wherein a thermal conductivity of the base is from 20 to 2000 Watts/mK, and wherein a thermal conductivity of the pad is from 0.01 to 3.0 Watts/mK.
Claim 8
Dependent Claim
17 words
The electrostatic chuck of claim 2 wherein the pad is positioned in a depression in the base.
Claim 9
Dependent Claim
34 words
The electrostatic chuck of claim 2 wherein the thermal resistance R B is from 0.2×10 -3 to 20×10 -3 K/W, and the thermal resistance R P is from 50×10 -3 to 400×10 -3 K/W.
Claim 10
Dependent Claim
45 words
A process chamber comprising: (a) a gas distributor system for introducing process gas into the process chamber; (b) a plasma generator for forming a plasma from the process gas; and (c) the electrostatic chuck of claim 2 for holding a substrate in the process chamber.
Claim 11
Independent Claim
100 words
A method of electrostatically holding a substrate and maintaining predetermined temperatures across the substrate, the method comprising the steps of: (a) electrostatically holding the substrate on a receiving surface of an electrostatic member; (b) maintaining first thermal pathways having a thermal resistance R B , below portions of the substrate; and (c) maintaining second thermal pathways having a thermal resistance R P , in a circular region below other portions of the substrate, the thermal resistance R P being sufficiently higher than the thermal resistance R B , to provide predetermined temperatures across the substrate during processing of the substrate.
Claim 12
Independent Claim
100 words
A method of electrostatically holding a substrate and maintaining predetermined temperatures across the substrate, the method comprising the steps of: (a) electrostatically holding the substrate on a receiving surface of an electrostatic member; (b) maintaining first thermal pathways having a thermal resistance R B , below portions of the substrate; and (c) maintaining second thermal pathways having a thermal resistance R P , in a circular region below other portions of the substrate, the thermal resistance R P being sufficiently higher than the thermal resistance R B , to provide predetermined temperatures across the substrate during processing of the substrate.
Claim 13
Dependent Claim
55 words
A method according to claim 10 characterized in that the first thermal pathways are maintained by providing a base supporting the electrostatic member, the base having a lower surface, and the second thermal pathways are maintained by providing a pad between the receiving surface of the electrostatic member and the lower surface of the base.
Claim 14
Dependent Claim
29 words
A method according to claim 10 characterized in that the difference in thermal resistances ΔR=R P -R B is selected to maintain substantially the same temperatures across the substrate.
Claim 15
Dependent Claim
45 words
A method according to claim 10 characterized in that the difference in thermal resistances ΔR=R P -R B is selected to maintain temperatures at the center of the substrate that are 0° C. to 10° C. higher than temperatures at the perimeter of the substrate.
Claim 16
Dependent Claim
76 words
A method according to claim 10 comprising the initial steps of: (1) measuring a steady state temperature profile across a substrate surface, during processing of the substrate; (2) correlating the steady state temperature profile to variations in processing characteristics across the substrate surface; and (3) selecting a difference in thermal resistances ΔR=R P -R B , of the first and second thermal pathways, that substantially reduces the variations in the processing characteristics across the substrate surface.
Claim 17
Dependent Claim
83 words
An electrostatic chuck for holding a substrate in a process chamber, the electrostatic chuck comprising: (a) an electrostatic member comprising a dielectric covering an electrode, the dielectric having a receiving surface for receiving the substrate; and (b) a thermally insulating means for controlling thermal transfer rates from different portions of the substrate to maintain predetermined temperatures across the substrate during processing of the substrate in the process chamber, the means comprising a disc having a diameter smaller than a diameter of the substrate.
Claim 18
Dependent Claim
83 words
An electrostatic chuck for holding a substrate in a process chamber, the electrostatic chuck comprising: (a) an electrostatic member comprising a dielectric covering an electrode, the dielectric having a receiving surface for receiving the substrate; and (b) a thermally insulating means for controlling thermal transfer rates from different portions of the substrate to maintain predetermined temperatures across the substrate during processing of the substrate in the process chamber, the means comprising a disc having a diameter smaller than a diameter of the substrate.
Claim 19
Dependent Claim
29 words
The electrostatic chuck of claim 15 further comprising a base below the electrostatic member and wherein the thermally insulating means is positioned between the electrostatic member and the base.
Claim 20
Dependent Claim
64 words
The electrostatic chuck of claim 16 wherein the base comprises a first thermal resistance R B and wherein the thermally insulating means comprises a second thermal resistance R P that is sufficiently higher or lower than the thermal resistance R B of the base, to provide predetermined temperatures across the substrate surface by regulating thermal transfer rates from different portions of the electrostatic member.
Claim 21
Dependent Claim
41 words
The electrostatic chuck of claim 17 wherein the thermally insulation means comprises a thermal resistance R P such that the difference in thermal resistance ΔR=R P -R B is sufficiently high to maintain substantially the same temperatures across the substrate surface.
Claim 22
Dependent Claim
50 words
The electrostatic chuck of claim 17 wherein the thermally insulating means comprises a thermal resistance R P such that the difference in thermal resistance ΔR=R P -R B is sufficiently high to provide a temperature profile having temperatures that differ by 0° C. to 10° C. across the substrate surface.
Claim 23
Dependent Claim
34 words
The electrostatic chuck of claim 17 wherein the thermal resistance R B is from 0.2×10 -3 to 20×10 -3 K/W, and the thermal resistance R P is from 50×10 -3 to 400×10 -3 K/W.
Claim 24
Independent Claim
98 words
A method of fabricating an electrostatic chuck for holding a substrate, the method comprising the steps of: (a) forming an electrostatic member comprising an electrode covered by an insulator, the electrostatic member having a receiving surface for receiving the substrate thereon; (b) forming a base; and (c) forming a disc of thermally insulating material, the disc having a diameter smaller than a diameter of the electrostatic member, and positioning the disc between the electrostatic member and the base, whereby the disc controls the temperatures across the substrate by regulating thermal transfer rates from different portions of the substrate.
Claim 25
Independent Claim
98 words
A method of fabricating an electrostatic chuck for holding a substrate, the method comprising the steps of: (a) forming an electrostatic member comprising an electrode covered by an insulator, the electrostatic member having a receiving surface for receiving the substrate thereon; (b) forming a base; and (c) forming a disc of thermally insulating material, the disc having a diameter smaller than a diameter of the electrostatic member, and positioning the disc between the electrostatic member and the base, whereby the disc controls the temperatures across the substrate by regulating thermal transfer rates from different portions of the substrate.
Claim 26
Dependent Claim
27 words
A method according to claim 21 wherein step (c) comprises the step of filling a depression in the base or electrostatic member with a thermally insulating material.
Claim 27
Dependent Claim
28 words
A method according to claim 21 wherein step (c) comprises the step of filling a depression in the electrostatic member or electrostatic member with a thermally insulating material.
Claim 28
Dependent Claim
59 words
A method according to claim 21 wherein the thermally insulating material is selected to have a thermal resistance R P that is sufficiently different from a thermal resistance of the base R B to maintain temperatures at the center of the substrate that are from 0° C. to 10° C. higher than temperatures at the perimeter of the substrate.
Claim 29
Dependent Claim
27 words
A method according to claim 24 wherein the difference in thermal resistances ΔR=R P -R B is selected to maintain substantially the same temperatures across the substrate.
Claim 30
Dependent Claim
20 words
A method according to claim 21 wherein step (c) comprises the step of forming a disc having a tapered cross-section.
Claim 31
Dependent Claim
22 words
A method according to claim 26 wherein the cross-section tapers from a center of the disc to a periphery of the disc.
Claim 32
Dependent Claim
21 words
A method according to claim 21 wherein step (c) comprises the step of forming a disc from a ceramic or polymer.
Claim 33
Dependent Claim
102 words
An electrostatic chuck for holding a substrate in a process chamber, the electrostatic chuck comprising (a) an electrostatic member comprising a dielectric covering an electrode, the dielectric having a receiving surface for receiving the substrate; (b) a base having a surface on which the electrostatic member is supported, the surface having a depression; and (c) a pad of thermally insulating material positioned in the depression of the base, the pad comprising a disc having a diameter smaller than the diameter of the substrate, whereby the pad controls temperatures across the substrate by regulating thermal transfer rates from different portions of the substrate.
Claim 34
Dependent Claim
102 words
An electrostatic chuck for holding a substrate in a process chamber, the electrostatic chuck comprising (a) an electrostatic member comprising a dielectric covering an electrode, the dielectric having a receiving surface for receiving the substrate; (b) a base having a surface on which the electrostatic member is supported, the surface having a depression; and (c) a pad of thermally insulating material positioned in the depression of the base, the pad comprising a disc having a diameter smaller than the diameter of the substrate, whereby the pad controls temperatures across the substrate by regulating thermal transfer rates from different portions of the substrate.
Claim 35
Dependent Claim
28 words
The electrostatic chuck of claim 29 wherein the base comprises a first thermal resistance R B and wherein the pad comprises a second thermal resistance R P .
Claim 36
Dependent Claim
16 words
The electrostatic chuck of claim 30 wherein the pad comprises a disc having a tapered cross-section.
Claim 37
Dependent Claim
19 words
The electrostatic chuck of claim 31 wherein the cross-section tapers from a center to a periphery of the disc.
Claim 38
Dependent Claim
47 words
The electrostatic chuck of claim 30 wherein the second thermal resistance R P is such that a difference in thermal resistance ΔR=R P -R B is sufficiently high to provide a temperature profile having temperatures that differ by 0° C. to 10° C. across the substrate surface.
Claim 39
Dependent Claim
38 words
The electrostatic chuck of claim 30 wherein the second thermal resistance R P is such that the difference in thermal resistance ΔR=R P -R B is sufficiently high to maintain substantially the same temperatures across the substrate surface.
Claim 40
Dependent Claim
24 words
The electrostatic chuck of claim 30 wherein the difference in thermal resistance ΔR=R P -R B is from about 10 to about 1000 K/W.
Claim 41
Dependent Claim
38 words
The electrostatic chuck of claim 30 wherein the thermal resistance R B is from about 0.2×10 -3 to about 20×10 3 K/W, and the thermal resistance R P is from about 50×10 -3 to about 400×10 -3 K/W.
Claim 42
Dependent Claim
37 words
The electrostatic chuck of claim 29 wherein a thermal conductivity of the base is from about 20 to about 2000 Watts/mK, and wherein a thermal conductivity of the pad is from about 0.01 to about 3.0 Watts/mK.
Claim 43
Dependent Claim
45 words
A process chamber comprising: (a) a gas distributor system for introducing process gas into the process chamber; (b) a plasma generator for forming a plasma from the process gas; and (c) the electrostatic chuck of claim 30 for holding a substrate in the process chamber.