EP0512936A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Temperature cycling ceramic electrostatic chuck
Assignee: International Business Machines Corp
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Filing: 1992-04-07
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Granted: —
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Expires: 2012-04-07
Abstract
Abstract An electrostatic chuck 8 assembly includes, from top to bottom: a top isolation layer 42; an electrostatic pattern layer 44 comprised of an electrically conductive electrostatic pattern 46 disposed on a substrate 45; a heating layer 50 comprised of an electrically conductive heating pattern 54 disposed on a substrate; a support 60; and, a heat sink base 70 having backside cooling and insulating channels 78, 80 provided therein.
Inventors
- 👤 Joseph Skinner Logan
- 👤 Raymond Robert Ruckel
- 👤 Robert Eli Tompkins
- 👤 Robert Peter Westerfield, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 21:39
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/72; H02; H02N; H02N13/00; H10P72/722; Y; Y10; Y10T; Y10T279/00; Y10T279/23
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
143 words
An electrostatic chuck for clamping a semiconductor wafer comprising, from top to bottom: an electrically insulative, thermally conductive isolation layer; an electrostatic pattern layer having a first electrically conductive pattern disposed thereon for generating an electrostatic force and first electrically conductive vias disposed therethrough for conducting electrical energy to said first electrically conductive pattern; a heating layer having a second electrically conductive pattern disposed thereon for generating heat for heating the wafer, second electrically conductive vias disposed therethrough for conducting electrical energy to said first vias, and third electrically conductive vias disposed therethrough for conducting electrical energy to said second electrically conductive pattern; a support having fourth and fifth electrically conductive vias disposed therethrough for conducting electrical energy to said first and third vias; and, a heat sink base having access holes provided therethrough for providing access to said fourth and fifth vias.
Claim 2
Dependent Claim
25 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said heat sink base further comprises cooling channels for circulating a coolant.
Claim 3
Dependent Claim
59 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said heat sink base is further comprised of cooling channels for circulating a coolant and at least one chamber which is evacuated when the wafer is heated by said heating layer and filled with a thermally conductive gas when the wafer is cooled by said chuck.
Claim 4
Dependent Claim
21 words
An electrostatic chuck for clamping a .semiconductor wafer according to claim 1, wherein said isolation layer is comprised of boron nitride.
Claim 5
Dependent Claim
20 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said isolation layer is comprised of polyimide.
Claim 6
Dependent Claim
20 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said isolation layer is comprised of alumina.
Claim 7
Dependent Claim
20 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said isolation layer is comprised of quartz.
Claim 8
Dependent Claim
20 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said isolation layer is comprised of diamond.
Claim 9
Dependent Claim
44 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said first electrically conductive pattern is comprised of a plurality of alternating conductive strips, each said conductive strip being electrically energized with an opposite DC potential of that of adjacent strips.
Claim 10
Dependent Claim
23 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said first electrically conductive pattern is comprised of pyrolytic graphite.
Claim 11
Dependent Claim
27 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said electrostatic pattern layer and heating layer are comprised of a pyrolytic boron nitride.
Claim 12
Dependent Claim
24 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said second electrically conductive pattern is comprised of a pyrolytic graphite.
Claim 13
Dependent Claim
20 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said is comprised of an iron/nickel/cobalt alloy.
Claim 14
Dependent Claim
21 words
An electrostatic chuck for clamping a semiconductor wafer according to claim 1, wherein said heat sink base is comprised of Kovar.
Claim 15
Dependent Claim
214 words
An electrostatic chuck for clamping a semiconductor wafer comprising, from top to bottom: an electrically insulative, thermally conductive isolation layer; an ceramic electrostatic pattern layer having: a first conductive pattern disposed thereon for generating an electrostatic force, said first conductive pattern being comprised of a pyrolytic graphite arranged in a plurality of alternating conductive strips, each said conductive strip being electrically energized with an opposite DC potential of that of adjacent strips; and, a plurality of first electrically conductive vias disposed therethrough for conducting electrical energy to said first conductive pattern; a heating layer comprised of boron nitride and having: a heating pattern disposed thereon comprised of pyrolytic graphite for generating heat for heating the wafer; a plurality of second electrically conductive vias disposed therethrough for conducting electrical energy to said first vias and conductive pattern; and, third electrically conductive vias disposed therethrough for conducting electrical energy to said heating pattern; and, a heat sink base comprised of an iron/nickel/cobalt alloy having: access holes provided therethrough for providing access to said first and third vias; cooling channels for circulating a coolant; and, at least one chamber which is evacuated for when the wafer is heated by said heating layer and filled with a thermally conductive gas when the wafer is cooled by said chuck.
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