EP0049588A2
Expired / Lapsed
EP
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Method and apparatus for dry etching and electrostatic chucking device used therein
Assignee: Fujitsu Ltd
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Filing: 1981-09-24
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Granted: —
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Expires: 2001-09-24
Abstract
Abstract An electrostatic chucking device for use in dry etching apparatus comprises a supporting base (not shown) the temperature of which is maintained at a predetermined value, an insulator (2) on the supporting base, a pair of plane electrodes (4, 5) in the insulator, and a material (3) being chucked on the pair of plane electrodes, the material containing at least a conductive portion. The sum of the areas of the portions of the plane electrodes which overlap with the material are almost equal to the contact area between the material (3) and the insulator (2). When a voltage is applied between the plane electrodes from an external power source, the material is chucked electrostatically to the supporting base. The electrostatic force attracting the material is maximized by the large area of the electrodes, and further by making the areas of the two electrodes equal.
Inventors
- 👤 Naomichi Abe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 01:27
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; C; C23; C23C; C23C14/00; C23C14/22; C23C14/50; H02; H02N; H02N13/00; H10P72/70; H10P72/72; H10P72/722
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
127 words
An electrostatic chucking device comprising, a supporting base (12, figure 4) the temperature of which can be maintained at a predetermined value, an insulator (16) on the said supporting base, a pair of plane electrodes (17, 18, figure 6; 6, 7, figure 8; 8, 9, figure 9) on the said insulator, and an external power source which supplies a voltage between the said plane electrodes, the device being capable of chucking on the said pair of plane electrodes a material (3). having at least a conductive portion therein; characterized in that the sum of the areas of the portions of the said pair of plane electrodes which face the said material is approximately equal to the area of overlap between the said material and the said insulator.
Claim 2
Dependent Claim
127 words
An electrostatic chucking device comprising, a supporting base (12, figure 4) the temperature of which can be maintained at a predetermined value, an insulator (16) on the said supporting base, a pair of plane electrodes (17, 18, figure 6; 6, 7, figure 8; 8, 9, figure 9) on the said insulator, and an external power source which supplies a voltage between the said plane electrodes, the device being capable of chucking on the said pair of plane electrodes a material (3). having at least a conductive portion therein; characterized in that the sum of the areas of the portions of the said pair of plane electrodes which face the said material is approximately equal to the area of overlap between the said material and the said insulator.
Claim 3
Independent Claim
184 words
A method for dry etching of a material comprising at least a conductive portion, using either sputter etching apparatus, reactive sputter etching apparatus (figure 4) or plasma etching apparatus, comprising the steps of: putting the material to be etched (14, figure 4) on a chucking device which comprises a supporting base (12), the temperature of. which is maintained at a predetermined value, an insulator (2) on the said supporting base, a pair of plane electrodes (17, 18, figure 6; 6, 7, figure 8; 8, 9, figure 9) on the said insulator, and an external power source which supplies a voltage between the said plane electrodes, the material being chucked on the said pair of plane electrodes; and applying a voltage between the said electrodes of the chucking device from an external power source, characterized in that the sum of the areas of the portions of the said pair of plane-electrodes which face the said material is approximately equal to the area of overlap between the said'material and the said insulator, whereby the material is etched while being chucked electrostatically to the said supporting base.
Claim 4
Independent Claim
184 words
A method for dry etching of a material comprising at least a conductive portion, using either sputter etching apparatus, reactive sputter etching apparatus (figure 4) or plasma etching apparatus, comprising the steps of: putting the material to be etched (14, figure 4) on a chucking device which comprises a supporting base (12), the temperature of. which is maintained at a predetermined value, an insulator (2) on the said supporting base, a pair of plane electrodes (17, 18, figure 6; 6, 7, figure 8; 8, 9, figure 9) on the said insulator, and an external power source which supplies a voltage between the said plane electrodes, the material being chucked on the said pair of plane electrodes; and applying a voltage between the said electrodes of the chucking device from an external power source, characterized in that the sum of the areas of the portions of the said pair of plane-electrodes which face the said material is approximately equal to the area of overlap between the said'material and the said insulator, whereby the material is etched while being chucked electrostatically to the said supporting base.
Claim 5
Dependent Claim
73 words
A method for dry etching as defined in claim 2, using either sputter etching apparatus or reactive sputter etching apparatus, further comprising the step of applying a high frequency voltage between two electrodes of the etching apparatus, while maintaining . at a predetermined value the temperature of one of the said electrodes (12, figure 4) applying the high frequency voltage, the said electrostatic chucking plane electrodes being located on the said one electrode.
Claim 6
Dependent Claim
28 words
A method for dry etching as defined in claim 3, wherein the said voltage of tlm external power source is applied to the electrostatic chucking electrodes through filters.
Claim 7
Dependent Claim
31 words
A method for dry etching as defined in claim 2, 3 or 4, wherein the said material is etched while being chucked horizontally underneath the pair of plane electrodes (figure 4).
Claim 8
Dependent Claim
36 words
A method for dry etching as defined in claim 2, 3 or 4, wherein the said material is etched while said material is being chucked vertically by the pair of plane electrodes in a vertical plane.
Claim 9
Independent Claim
148 words
An apparatus for dry etching of a material having at least a conductive portion therein, the apparatus comprising either sputter etching apparatus, reactive sputter etching apparatus or plasma etching apparatus, and further comprising: a chucking device, the chucking device having a supporting base (12, figure 4) the temperature of which is maintained at a predetermined value, an insulator on the said supporting base, a pair of plane electrodes (17, 18 figure 6; 6, 7, figure 8; 8, 9 figure 9) on the said insulator, and a material (14) to be chucked on the said pair of plane electrodes, a voltage of an external power source being applied between the said electrodes in the said chucking device, and characterized in that the sum of the area of the said pair of plane electrodes is approximately equal to the area of overlap between the said material and the said insulator.
Claim 10
Independent Claim
148 words
An apparatus for dry etching of a material having at least a conductive portion therein, the apparatus comprising either sputter etching apparatus, reactive sputter etching apparatus or plasma etching apparatus, and further comprising: a chucking device, the chucking device having a supporting base (12, figure 4) the temperature of which is maintained at a predetermined value, an insulator on the said supporting base, a pair of plane electrodes (17, 18 figure 6; 6, 7, figure 8; 8, 9 figure 9) on the said insulator, and a material (14) to be chucked on the said pair of plane electrodes, a voltage of an external power source being applied between the said electrodes in the said chucking device, and characterized in that the sum of the area of the said pair of plane electrodes is approximately equal to the area of overlap between the said material and the said insulator.
Claim 11
Dependent Claim
46 words
A chucking device in accordance with claim 1, a method in accordance with any of claims 2 to 6, or apparatus in accordance with claim 7, wherein the said pair of plane electrodes have approximately equal surface areas, thus optimizing the electrostatic force chucking the material.
Claim 12
Dependent Claim
49 words
A chucking device in accordance with claim 1, or apparatus according to claim 7, wherein the said insulator (16, figure 6) is disc-shaped and the said pair of plane electrodes are embedded in the insulator, thus being insulated from the supporting base and from the material to be chucked.
Claim 13
Dependent Claim
29 words
A device or apparatus according to claim 9, wherein the said plane electrodes are semicircular in outline (figure 7), their flat edges adjacent and separated by a narrow gap.
References Cited (Backward Citations)
No citation records indexed.
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