Abstract To provide a method for producing the semiconductor device in which contactability between a dielectric layer and a contact layer is not reduced during the formation of a metal plug, the method comprises forming a semiconductor device including a base; forming a lower conductive layer on the base; forming a dielectric layer formed on the lower conductive layer; forming an opening in the dielectric layer for electrically connecting the lower conductive layer with an upper conductive layer to be formed on the dielectric layer; forming a first contact layer formed on at least a bottom surface of the via hole and made of a single TiON layer, any portions of said first contact layer formed on the dielectric layer being removed; forming a second contact layer over an entire exposed surface of the first contact layer, depositing tungsten on the second contact layer by a chemical vapor deposition method; and removing portions of the second contact layer formed on the dielectric layer while leaving a tungsten plug and the first and second contact layers within the opening to form a via hole contact.
A method for producing a semiconductor device, comprising the following steps of: forming a dielectric layer on a base on which a first conductive layer is formed; forming an opening portion in said dielectric layer; forming a first contact layer through a sputtering method on at least a bottom of said opening portion, said first contact layer having a single TiON layer; removing any portions of said first contact layer formed on said dielectric layer; forming a second contact layer over an entire exposed surface of said first contact layer, said second contact layer being formed by the sputtering method; depositing tungsten on said second contact layer by a chemical vapor deposition method; and removing portions of the second contact layer formed on said dielectric layer while leaving a tungsten plug and said first and second contact layers within said opening portion to thereby form a via hole contact.
Claim 2
Independent Claim
149 words
A method for producing a semiconductor device, comprising the following steps of: forming a dielectric layer on a base on which a first conductive layer is formed; forming an opening portion in said dielectric layer; forming a first contact layer through a sputtering method on at least a bottom of said opening portion, said first contact layer having a single TiON layer; removing any portions of said first contact layer formed on said dielectric layer; forming a second contact layer over an entire exposed surface of said first contact layer, said second contact layer being formed by the sputtering method; depositing tungsten on said second contact layer by a chemical vapor deposition method; and removing portions of the second contact layer formed on said dielectric layer while leaving a tungsten plug and said first and second contact layers within said opening portion to thereby form a via hole contact.
Claim 3
Dependent Claim
19 words
The method according to claim 1, wherein said second contact layer is made of one of tungsten and silicon.