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US5960299A
Expired / Lapsed
US
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Method of fabricating a shallow-trench isolation structure in integrated circuit
Assignee: United Microelectronics Corp
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Filing: 1998-10-28
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Granted: 1999-09-28
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Expires: 2018-10-28
Abstract
Abstract A semiconductor fabrication method is provided for fabricating a shallow-trench isolation (STI) structure in an integrated circuit, which can prevent the occurrence of microscratches in the oxide plugs of the STI structure, thus further preventing the occurrence of a bridging effect and short-circuits between the circuit components that are intended to be electrically isolated by the STI structure. This method is characterized by the use of a laser annealing process to remove the microscratches that formed on the top surface of the oxide plugs during the chemical-mechanical polishing (CMP) process used to remove the upper part of the oxide layer to form the oxide plugs This method can therefore prevent the occurrence of a bridging effect and short-circuits due to the forming of the microscratches that would otherwise occur in the prior art.
Inventors
- 👤 Tri-Rung Yew
- 👤 Water Lur
- 👤 Shih-Wei Sun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:24
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
109 words
A method for fabricating an STI structure in an integrated circuit, comprising the steps of: preparing a semiconductor substrate; forming a mask layer over the substrate; removing selected portions of the mask layer and the underlying substrate to form a trench; forming a liner oxide layer over the exposed surfaces of the trench; forming an oxide layer over the mask layer, which fills up the trench; removing part of the oxide layer until the mask layer is exposed, with the remaining part of the oxide layer in the trench serving as an oxide plug; performing a laser annealing process on the oxide plug; and removing the entire mask layer.
Claim 2
Independent Claim
109 words
A method for fabricating an STI structure in an integrated circuit, comprising the steps of: preparing a semiconductor substrate; forming a mask layer over the substrate; removing selected portions of the mask layer and the underlying substrate to form a trench; forming a liner oxide layer over the exposed surfaces of the trench; forming an oxide layer over the mask layer, which fills up the trench; removing part of the oxide layer until the mask layer is exposed, with the remaining part of the oxide layer in the trench serving as an oxide plug; performing a laser annealing process on the oxide plug; and removing the entire mask layer.
Claim 3
Dependent Claim
14 words
The method of claim 1, wherein the mask layer is formed from silicon nitride.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein the step of removing part of the oxide layer is carried out through a CMP process.
Claim 5
Dependent Claim
24 words
The method of claim 1, wherein the laser annealing process utilizes an excimer laser beam to scan over the surface of the oxide plug.
Claim 6
Dependent Claim
15 words
The method of claim 1, wherein the mask layer is formed through a CVD process.
Claim 7
Dependent Claim
15 words
The method of claim 1, wherein the oxide layer is formed through a CVD process.
Claim 8
Independent Claim
119 words
A method for fabricating an STI structure in integrated circuit, comprising the steps of: preparing a semiconductor substrate; forming a layer of silicon nitride over the substrate to serve as a mask layer; removing selected portions of the silicon nitride layer and the underlying substrate to form a trench; forming a liner oxide layer over the exposed surfaces of the trench; forming an oxide layer over the silicon nitride layer, which fills the trench; removing part of the oxide layer until the silicon nitride layer is exposed, with the remaining part of the oxide layer in the trench serving as an oxide plug; performing a laser annealing process on the oxide plug, and removing the entire silicon nitride layer.
Claim 9
Independent Claim
119 words
A method for fabricating an STI structure in integrated circuit, comprising the steps of: preparing a semiconductor substrate; forming a layer of silicon nitride over the substrate to serve as a mask layer; removing selected portions of the silicon nitride layer and the underlying substrate to form a trench; forming a liner oxide layer over the exposed surfaces of the trench; forming an oxide layer over the silicon nitride layer, which fills the trench; removing part of the oxide layer until the silicon nitride layer is exposed, with the remaining part of the oxide layer in the trench serving as an oxide plug; performing a laser annealing process on the oxide plug, and removing the entire silicon nitride layer.
Claim 10
Dependent Claim
22 words
The method of claim 7, wherein the step of removing part of the oxide layer is carried out through a CMP process.
Claim 11
Dependent Claim
24 words
The method of claim 7, wherein the laser annealing process utilizes an excimer laser beam to scan over the surface of the oxide plug.
Claim 12
Dependent Claim
16 words
The method of claim 7, wherein the silicon nitride layer is formed through a CVD process.
Claim 13
Dependent Claim
15 words
The method of claim 7, wherein the oxide layer is formed through a CVD process.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-09-27 | 2003-03-29 | 2003-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-27 | 2007-03-29 | 2007-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-27 | 2011-03-29 | 2011-09-28 | $7700.00 | Window Closed / Lapsed |