US5858858A
Expired / Lapsed
US
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Annealing methods for forming isolation trenches
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-10-11
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Granted: 1999-01-12
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Expires: 2016-10-11
Abstract
Abstract A method for forming a microelectronic structure includes the steps of forming a mask layer on a substrate, forming a trench in the exposed portion of the substrate, forming a layer of an insulating material which fills the trench and covers the mask layer, and annealing the insulating material at a temperature of at least about 1,150° C. The annealing step can be performed for a period of time of about .5 hours to about 8 hours, and the annealing step can be performed in an inert atmosphere.
Inventors
- 👤 Tai-su Park
- 👤 Moon-han Park
- 👤 Yu-gyun Shin
- 👤 Han-sin Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:56
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
69 words
A method for forming a microelectronic structure, said method comprising the steps of: forming a mask layer on a substrate wherein said mask layer exposes a portion of said substrate; forming a trench in said exposed portion of said substrate; forming a layer of an insulating material which fills said trench and covers said mask layer; and annealing said insulating material at a temperature of at least 1,150° C.
Claim 2
Independent Claim
69 words
A method for forming a microelectronic structure, said method comprising the steps of: forming a mask layer on a substrate wherein said mask layer exposes a portion of said substrate; forming a trench in said exposed portion of said substrate; forming a layer of an insulating material which fills said trench and covers said mask layer; and annealing said insulating material at a temperature of at least 1,150° C.
Claim 3
Dependent Claim
25 words
A method according to claim 1 wherein said annealing step is performed for a period of time of about 0.5 hours to about 8 hours.
Claim 4
Dependent Claim
21 words
A method according to claim 1 wherein said annealing step is performed for a period of time of about 1 hour.
Claim 5
Dependent Claim
16 words
A method according to claim 1 wherein said annealing step is performed in an inert atmosphere.
Claim 6
Dependent Claim
20 words
A method according to claim 1 wherein said annealing step is performed in an atmosphere of nitrogen (N 2 ).
Claim 7
Dependent Claim
22 words
A method according to claim 1 further comprising the step of planarizing said insulating material so that said mask layer is exposed.
Claim 8
Dependent Claim
25 words
A method according to claim 6 further comprising the step of removing a remaining portion of said mask layer so that said substrate is exposed.
Claim 9
Dependent Claim
15 words
A method according to claim 6 wherein said planarizing step comprises using a chemical-mechanical polish.
Claim 10
Dependent Claim
34 words
A method according to claim 1 wherein said step of forming said mask layer comprises the steps of forming an oxide layer on said substrate and forming a nitride layer on said oxide layer.
Claim 11
Dependent Claim
44 words
A method according to claim 1 wherein said step of forming said layer of said insulating material comprises the steps of forming an oxide layer on inner walls of said trench, and depositing an insulating material on said oxide layer to fill said trench.
Claim 12
Dependent Claim
22 words
A method according to claim 10 wherein said step of depositing said insulating material comprises forming an oxide by chemical vapor deposition.
Claim 13
Independent Claim
122 words
A method for forming a microelectronic structure, said method comprising the steps of: forming a mask layer on a substrate wherein said mask layer exposes a portion of said substrate; forming a trench in said exposed portion of said substrate; forming a layer of an insulating material which fills said trench and covers said mask layer; and annealing said insulating material at a temperature in the range of about 1,000° C. to about 1,400° C. for a period of time of about 0.5 hours to about 8 hours wherein said step of annealing said insulating material at a temperature in the range of 1,000° C. to about 1,400° C. comprises annealing said insulating material at a temperature of at least 1,150° C.
Claim 14
Independent Claim
122 words
A method for forming a microelectronic structure, said method comprising the steps of: forming a mask layer on a substrate wherein said mask layer exposes a portion of said substrate; forming a trench in said exposed portion of said substrate; forming a layer of an insulating material which fills said trench and covers said mask layer; and annealing said insulating material at a temperature in the range of about 1,000° C. to about 1,400° C. for a period of time of about 0.5 hours to about 8 hours wherein said step of annealing said insulating material at a temperature in the range of 1,000° C. to about 1,400° C. comprises annealing said insulating material at a temperature of at least 1,150° C.
Claim 15
Dependent Claim
22 words
A method according to claim 12 further comprising the step of planarizing said insulating material so that said mask layer is exposed.
Claim 16
Dependent Claim
25 words
A method according to claim 13 further comprising the step of removing a remaining portion of said mask layer so that said substrate is exposed.
Claim 17
Dependent Claim
21 words
A method according to claim 12 wherein said annealing step is performed for a period of time of about 1 hour.
Claim 18
Dependent Claim
16 words
A method according to claim 12 wherein said annealing step is performed in an inert atmosphere.
Claim 19
Dependent Claim
20 words
A method according to claim 16 wherein said annealing step is performed in an atmosphere of nitrogen (N 2 ).
Claim 20
Dependent Claim
15 words
A method according to claim 13 wherein said planarizing step comprises using a chemical-mechanical polish.
Claim 21
Dependent Claim
34 words
A method according to claim 12 wherein said step of forming said mask layer comprises the steps of forming an oxide layer on said substrate and forming a nitride layer on said oxide layer.
Claim 22
Dependent Claim
44 words
A method according to claim 12 wherein said step of forming said layer of said insulating material comprises the steps of forming an oxide layer on inner walls of said trench, and depositing an insulating material on said oxide layer to fill said trench.
Claim 23
Dependent Claim
22 words
A method according to claim 20 wherein said step of depositing said insulating material comprises forming an oxide by chemical vapor deposition.
Claim 24
Dependent Claim
45 words
A method according to claim 1 wherein said mask layer comprises an oxide buffer layer on a nitride layer opposite said substrate, and wherein said step of forming said layer of said insulating material is preceded by the step of removing said oxide buffer layer.
Claim 25
Dependent Claim
45 words
A method according to claim 19 wherein said mask layer is an oxide buffer layer on a nitride layer opposite said substrate, and wherein said step of forming said layer of said insulating material is preceded by the step of removing said oxide buffer layer.
References Cited (Backward Citations)
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