Abstract An improved semiconductor structure is disclosed, including at least one stud-up and an interconnection line connected thereto, wherein the stud-up and interconnection line are formed from a single layer of metal. The structure is prepared by a method in which an insulator region is first provided on a semiconductor substrate, and is then patterned and etched to define at least one opening having a pre-selected depth. Metal is deposited to fill the opening and form the interconnection line, followed by the patterning and formation of a stud-up of desired dimensions within the metal-filled opening. The lower end of the stud-up becomes connected to the interconnection line, and the upper end of the stud-up terminates at or near the upper surface of the insulator region. Other embodiments also include an interconnected stud-down. An endpoint detection technique can be used to precisely control the height of the stud-up and the width of the interconnection line.
A method of precisely controlling the etching depth of a via within a metal layer disposed over an insulator region, comprising the steps of: a) forming an endpoint detection trench within the insulator region, at a position parallel to and planar with the desired starting point for the via within the metal layer, said endpoint trench having a depth equal to the desired etching depth for the metal layer via, and being filled with the metal forming the metal layer; and b) directionally etching all of the exposed metal on the surface of the insulator region, said etching being carried out until the endpoint detection trench is cleared of metal, so that the desired via has been formed by the simultaneous removal of the necessary amount of metal from the metal layer.
Claim 2
Independent Claim
132 words
A method of precisely controlling the etching depth of a via within a metal layer disposed over an insulator region, comprising the steps of: a) forming an endpoint detection trench within the insulator region, at a position parallel to and planar with the desired starting point for the via within the metal layer, said endpoint trench having a depth equal to the desired etching depth for the metal layer via, and being filled with the metal forming the metal layer; and b) directionally etching all of the exposed metal on the surface of the insulator region, said etching being carried out until the endpoint detection trench is cleared of metal, so that the desired via has been formed by the simultaneous removal of the necessary amount of metal from the metal layer.
Claim 3
Dependent Claim
36 words
The method according to claim 1 further characterized in that the metal which forms the metal layer and fills the endpoint detection trench is simultaneously deposited over the insulator region and into the endpoint detection trench.
Claim 4
Dependent Claim
14 words
The method according to claim 1 wherein said directional etching is reactive ion etching.
Claim 5
Dependent Claim
28 words
The method according to claim 1 further characterized in that the via formed within the metal layer forms a self-aligned stud-up and interconnection line in a semiconductor device.