Process of making a glass semiconductor package

Claim 2

A process of making a glass semiconductor package for an electronic device, comprising: placing the electronic device in a mold; injecting molten thermoplastic glass consisting essentially of a glass having a sealing temperature not over 350° C. and a coefficient of thermal expansion not over 110×10 -7 /°C. into the mold to surround the electronic device with thermoplastic glass; and solidifying the molten thermoplastic glass by cooling after the glass is injected into the mold.

Claim 3

A process of making a glass semiconductor package according to claim 1, wherein the thermoplastic glass is a sealing glass selected from the group consisting of: (i) tin-phosphorus oxyflouride glass having a low transition temperature and a mill addition selected from the group consisting of molybdenum, tungsten, lead orthophosphate, magnesium, pyrophosphate, a magnesium pyrophosphate with at least a portion of the magnesium ions replaced by at least one cation selected from the group consisting of cobalt, arsenic, zinc, iron, aluminum and zirconium, and a crystallized phosphate glass consisting essentially of one or more cations selected from the group consisting of magnesium, cobalt, arsenic, zinc, iron, aluminum and zirconium; and (ii) lead sealing glass and a mill addition of a pyrophosphate crystalline material selected from the group consisting of magnesium pyrophosphate, a magnesium pyrophosphate with at least a portion of the magnesium ions replaced by at least one cation selected from the group consisting of cobalt, arsenic, zinc, iron, aluminum and zirconium, and a crystallized phosphate glass consisting essentially of one or more cations selected from the group consisting of magnesium, cobalt, arsenic, zinc, iron, aluminum and zirconium.