US5080980A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ceramic package for semiconductor device
Assignee: Shinko Electric Industries Co Ltd
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Filing: 1990-08-31
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Granted: 1992-01-14
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Expires: 2010-08-31
Abstract
Abstract A ceramic package used for a semiconductor device comprises a ceramic base including a die-bonding area and wire-bonding areas defined. A metal underlayer formed on the die-bonding or wire-bonding areas essentially consists of two-plated layers of: a cobalt layer plated on the ceramic base and a nickel layer plated on the cobalt layer. The underlayer is annealed and, them, a gold-plated layer is formed on the underlayer.
Inventors
- 👤 Noboru Sakaguchi
- 👤 Shinichi Wakabayashi
- 👤 Yoshiro Nishiyama
- 👤 Kunihiko Imai
- 👤 Yoshikazu Hirabayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:09
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12458; Y10T428/12493; Y10T428/12528; Y10T428/12535; Y10T428/12556; Y10T428/12569; Y10T428/12771; Y10T428/12861; Y10T428/12944
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
69 words
A ceramic package used for a semiconductor device comprising a ceramic base and a metal layer formed on said ceramic base as an electrically conductive metallized layer, said metal layer consisting essentially of a cobalt layer plated on said ceramic base and a nickel layer plated on said cobalt layer, wherein said cobalt and nickel layers are annealed so that the cobalt layer is diffused into the nickel layer.
Claim 2
Dependent Claim
69 words
A ceramic package used for a semiconductor device comprising a ceramic base and a metal layer formed on said ceramic base as an electrically conductive metallized layer, said metal layer consisting essentially of a cobalt layer plated on said ceramic base and a nickel layer plated on said cobalt layer, wherein said cobalt and nickel layers are annealed so that the cobalt layer is diffused into the nickel layer.
Claim 3
Dependent Claim
18 words
A ceramic package as claimed in claim 1, wherein a thickness of said cobalt layer is 0.12-5 μm.
Claim 4
Dependent Claim
104 words
A ceramic package used for a semiconductor device comprising: a ceramic base, said ceramic base including at least one die-bonding and one wire-bonding areas defined thereon; a metal underlayer formed on at least one of said die-bonding or wire-bonding areas of said ceramic base as an electrically conductive metallized layer, said underlayer essentially consisting of a cobalt layer plated on said ceramic base and a nickel layer plated on said cobalt layer, and said underlayer being obtained by annealing said cobalt and nickel layers so that the cobalt layer is diffused into the nickel layer; and a gold layer plated on said metal underlayer.
Claim 5
Dependent Claim
104 words
A ceramic package used for a semiconductor device comprising: a ceramic base, said ceramic base including at least one die-bonding and one wire-bonding areas defined thereon; a metal underlayer formed on at least one of said die-bonding or wire-bonding areas of said ceramic base as an electrically conductive metallized layer, said underlayer essentially consisting of a cobalt layer plated on said ceramic base and a nickel layer plated on said cobalt layer, and said underlayer being obtained by annealing said cobalt and nickel layers so that the cobalt layer is diffused into the nickel layer; and a gold layer plated on said metal underlayer.
Claim 6
Dependent Claim
17 words
A ceramic package as claimed in claim 3, wherein a thickness of said cobalt layer 0.12-5.0 μm.
Claim 7
Dependent Claim
108 words
A ceramic package used for a semiconductor device comprising: a ceramic base, said ceramic base including at least one die-bonding area and one wire-bonding areas defined thereon; an electrically conducting metallized layer formed on at least one of said die-bonding or wire-bonding areas of said ceramic base, a metal underlayer formed on said metallized layer, said underlayer essentially consisting of a cobalt layer plated on said ceramic base and a nickel layer plated on said cobalt layer, and said underlayer being obtained by annealing said cobalt and nickel layers so that the cobalt layer is diffused into the nickel layer; a gold layer plated on said metal underlayer.
Claim 8
Dependent Claim
108 words
A ceramic package used for a semiconductor device comprising: a ceramic base, said ceramic base including at least one die-bonding area and one wire-bonding areas defined thereon; an electrically conducting metallized layer formed on at least one of said die-bonding or wire-bonding areas of said ceramic base, a metal underlayer formed on said metallized layer, said underlayer essentially consisting of a cobalt layer plated on said ceramic base and a nickel layer plated on said cobalt layer, and said underlayer being obtained by annealing said cobalt and nickel layers so that the cobalt layer is diffused into the nickel layer; a gold layer plated on said metal underlayer.
Claim 9
Dependent Claim
15 words
A ceramic package as claimed in claim 5, wherein metallized layer essentially consists of tungsten.
Claim 10
Dependent Claim
18 words
A ceramic package as claimed in claim 5, wherein a thickness of said cobalt layer is 0.12-5.0 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-13 | 1995-07-15 | 1996-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-13 | 1999-07-15 | 2000-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-13 | 2003-07-15 | 2004-01-14 | $7700.00 | Window Closed / Lapsed |