US5943571A
Expired / Lapsed
US
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Method for manufacturing fine structures
Assignee: Siemens AG
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Filing: 1997-06-26
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Granted: 1999-08-24
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Expires: 2017-06-26
Abstract
Abstract For manufacturing fine structures, nuclei that define the dimensions of the fine structures are formed on the surface of a substrate in a CVD process upon employment of a first process gas that contains SiH 4 and GeH 4 in a carrier gas. The nuclei can be employed both as a mask, for example, when etching or implanting, as will as active or passive component parts that remain in the structure, for example, as charge storages in the dielectric of an EEPROM.
Inventors
- 👤 Herbert Schaefer
- 👤 Martin Franosch
- 👤 Reinhard Stengl
- 👤 Volker Lehmann
- 👤 Hans Reisinger
- 👤 Hermann Wendt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; B; B82; B82Y; B82Y10/00; C; C23; C23C; C23C16/00; C23C16/04; H10B; H10B41/00; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10D64/00; H10D64/01; H10D64/031; H10D64/035; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P76/00; H10P76/40; H10P76/408
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
101 words
A method for manufacturing fine structures, the method comprising the steps of: forming nuclei that define dimensions of the fine structures formed on a surface of a substrate in a CVD process upon employment of a first process gas that contains SiH 4 and GeH 4 in a carrier gas; interrupting the CVD process upon employment of the first process gas as soon as the nuclei have reached a predetermined density; and setting the size of the nuclei by selective epitaxy upon employment of a second process gas that contains SiCl 2 H 2 and/or GeH 4 in the carrier gas.
Claim 2
Independent Claim
101 words
A method for manufacturing fine structures, the method comprising the steps of: forming nuclei that define dimensions of the fine structures formed on a surface of a substrate in a CVD process upon employment of a first process gas that contains SiH 4 and GeH 4 in a carrier gas; interrupting the CVD process upon employment of the first process gas as soon as the nuclei have reached a predetermined density; and setting the size of the nuclei by selective epitaxy upon employment of a second process gas that contains SiCl 2 H 2 and/or GeH 4 in the carrier gas.
Claim 3
Dependent Claim
25 words
The method according to claim 1 wherein the first process gas contains H 2 , N 2 , Ar or He as the carrier gas.
Claim 4
Dependent Claim
24 words
The method according to claim 1 wherein the nuclei have average diameters and average spacings, respectively, in a range between 1 and 100 nm.
Claim 5
Independent Claim
134 words
A method for manufacturing fine structures, the method comprising the steps of: forming nuclei that define dimensions of the fine structures formed on a surface of a substrate in a CVD process upon employment of a first process gas that contains SiH 4 and GeH 4 in a carrier gas; providing the substrate with a mask layer on whose surface the nuclei are formed; forming a mask from the mask layer by anisotropic etching upon employment of the nuclei as an etching mask; interrupting the CVD process upon employment of the first process gas as soon as the nuclei have reached a predetermined density; and setting the size of the nuclei by selective epitaxy upon employment of a second process gas that contains SiCL 2 H 2 and/or GeH 4 in the carrier gas.
Claim 6
Independent Claim
134 words
A method for manufacturing fine structures, the method comprising the steps of: forming nuclei that define dimensions of the fine structures formed on a surface of a substrate in a CVD process upon employment of a first process gas that contains SiH 4 and GeH 4 in a carrier gas; providing the substrate with a mask layer on whose surface the nuclei are formed; forming a mask from the mask layer by anisotropic etching upon employment of the nuclei as an etching mask; interrupting the CVD process upon employment of the first process gas as soon as the nuclei have reached a predetermined density; and setting the size of the nuclei by selective epitaxy upon employment of a second process gas that contains SiCL 2 H 2 and/or GeH 4 in the carrier gas.
Claim 7
Independent Claim
187 words
A method for manufacturing fine structures, the method comprising the steps of: forming nuclei that define dimensions of the fine structures formed on a surface of a substrate in a CVD process upon employment of a first process gas that contains SiH 4 and GeH 4 in a carrier gas; applying a first dielectric layer on whose surface the nuclei are formed onto the substrate; applying a second dielectric layer and a conductive layer; structuring the conductive layer and the first dielectric layer and the second dielectric layer for forming a gate electrode and a gate dielectric of a MOS transistor in which the nuclei are arranged between the first dielectric layer and the second dielectric layer to form charge storages; forming a source region and a drain region for the MOS transistor in the substrate; interrupting the CVD process upon employment of the first process gas as soon as the nuclei have reached a predetermined density; and setting the size of the nuclei by selective epitaxy upon employment of a second process gas that contains SiCL 2 H 2 and/or GeH 4 in the carrier gas.
Claim 8
Independent Claim
187 words
A method for manufacturing fine structures, the method comprising the steps of: forming nuclei that define dimensions of the fine structures formed on a surface of a substrate in a CVD process upon employment of a first process gas that contains SiH 4 and GeH 4 in a carrier gas; applying a first dielectric layer on whose surface the nuclei are formed onto the substrate; applying a second dielectric layer and a conductive layer; structuring the conductive layer and the first dielectric layer and the second dielectric layer for forming a gate electrode and a gate dielectric of a MOS transistor in which the nuclei are arranged between the first dielectric layer and the second dielectric layer to form charge storages; forming a source region and a drain region for the MOS transistor in the substrate; interrupting the CVD process upon employment of the first process gas as soon as the nuclei have reached a predetermined density; and setting the size of the nuclei by selective epitaxy upon employment of a second process gas that contains SiCL 2 H 2 and/or GeH 4 in the carrier gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-23 | 2003-02-22 | 2003-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-23 | 2007-02-22 | 2007-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-23 | 2011-02-22 | 2011-08-24 | $7700.00 | Window Closed / Lapsed |