Patent US5937308A successfully refreshed from Google Patents.
US5937308A
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Semiconductor trench isolation structure formed substantially within a single chamber
Assignee: GlobalFoundries Inc
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Filing: 1997-03-26
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Granted: 1999-08-10
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Expires: 2017-03-26
Abstract
Abstract A substantially in situ trench isolation process is provided. The process includes forming a trench regions between active regions in a semiconductor substrate. The semiconductor substrate may be covered with a protective oxide pad and/or nitride layer. In a single chamber, an oxide is thermally grown in the trench, the nitride layer is substantially stripped, and a fill dielectric is deposited in the trench and over the active and trench regions. The invention contemplates thermal growth, etch, and deposition processes to be performed serially in a single chamber without opening the chamber. The invention further contemplates modifying or adapting a conventional process chamber to all for the in situ processing of thermal growth, etch, and deposition processes. Alternatively, a specialized chamber may be provided.
Inventors
- 👤 Mark I. Gardner
- 👤 Mark C. Gilmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:54
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
100 words
A method for forming an integrated circuit, comprising: providing a semiconductor substrate having a trench extending into the substrate adjacent a surface of the substrate covered by a substantially oxygen impermeable layer; within a common chamber and without opening the chamber, performing the steps of: growing an oxide upon a surface of the trench; removing the substantially oxygen impermeable layer; and depositing a dielectric within the trench, wherein said growing occurs before said removing, and said removing occurs before said depositing, and wherein said growing, removing and depositing occurs without opening the chamber intermediate said growing, removing and depositing steps.
Claim 2
Independent Claim
100 words
A method for forming an integrated circuit, comprising: providing a semiconductor substrate having a trench extending into the substrate adjacent a surface of the substrate covered by a substantially oxygen impermeable layer; within a common chamber and without opening the chamber, performing the steps of: growing an oxide upon a surface of the trench; removing the substantially oxygen impermeable layer; and depositing a dielectric within the trench, wherein said growing occurs before said removing, and said removing occurs before said depositing, and wherein said growing, removing and depositing occurs without opening the chamber intermediate said growing, removing and depositing steps.
Claim 3
Dependent Claim
28 words
The method as recited in claim 1, wherein said trench extends into the substrate from the surface of said substrate in regions absent said substantially oxygen impermeable layer.
Claim 4
Dependent Claim
19 words
The method as recited in claim 1, wherein said growing comprises heating said substrate in the presence of oxygen.
Claim 5
Dependent Claim
21 words
The method as recited in claim 1, wherein said removing comprises subjecting the substantially oxygen impermeable layer to a plasma etchant.
Claim 6
Dependent Claim
15 words
The method as recited in claim 1, wherein said depositing comprises applying a silicon dioxide.
Claim 7
Dependent Claim
33 words
The method as recited in claim 5, wherein said applying comprises vaporizing tetraethoxysilane (TEOS) and then condensing the vaporized TEOS within the trench to a thickness which exceeds a depth of the trench.
Claim 8
Dependent Claim
22 words
The method as recited in claim 1, wherein the semiconductor substrate remains within the chamber throughout the growing, removing and depositing steps.
References Cited (Backward Citations)
US4951601A
Cited
US4876216A
Cited
JPH04177735A
Cited
US5426076A
Cited
US5433794A
Cited
US5609737A
Cited
US5589233A
Cited
US5498578A
Cited
US5498577A
Cited
US5445989A
Cited
US5652166A
Cited
US5696019A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-09 | 2003-02-08 | 2003-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-09 | 2007-02-08 | 2007-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-09 | 2011-02-08 | 2011-08-10 | $7700.00 | Window Closed / Lapsed |