US5609737A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Film manufacturing method using single reaction chamber for chemical-vapor deposition and sputtering
Assignee: Alps Alpine Co Ltd
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Filing: 1994-08-12
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Granted: 1997-03-11
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Expires: 2014-08-12
Abstract
Abstract A method for manufacturing thin films in which a first film is formed on a substrate using chemical-vapor deposition (CVD), and a second film is formed on the substrate using sputtering, wherein the processes are sequentially performed in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode, and a second electrode located under the first electrode. During the CVD process, a dummy target is mounted on the first electrode and the substrate is mounted on the second electrode, a reactive gas is introduced into the chamber, and high frequency electrical power is applied to both the first and second electrodes, thereby causing the constituents of the reactive gas to deposit on the substrate to form the first film. Subsequently, any remaining reactive gas is removed from the chamber and an automated mechanism removes the dummy target from the first electrode and stores the dummy target in a storage chamber. A sputtering electrode is then mounted on the first electrode and a sputtering gas is introduced into the reaction chamber. High frequency electrical power is then applied to both the first and second electrodes, thereby causing the sputtering gas and sputtering target to deposit the second film on the substrate.
Inventors
- 👤 Hirofumi Fukui
- 👤 Masanori Miyazaki
- 👤 Masami Aihara
- 👤 Chisato Iwasaki
- 👤 Koichi Fukuda
- 👤 Yasuhiko Kasama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:03
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; H; H10; H10P; H10P72/00; H10P72/30; H10P72/32; C23C16/00; C23C16/02; C23C16/0227; C23C16/0245; C23C16/44; C23C16/4401; C23C16/4405; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10F; H10F71/00; H10F71/10; H10F71/103; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H01J2237/00; H01J2237/32; H10D86/00; H10D86/40; H10D86/60; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
190 words
A method for forming thin films in a single pressure-reducible deposition chamber having spaced-apart first and second electrodes, the method comprising the steps of: forming a first film by chemical vapor deposition (CVD) by: attaching a dummy target to the first electrode, the dummy target being formed from a material which resists reaction during CVD, thereby preventing contamination of the first film, attaching a substrate to said second electrode, supplying reactive gas into said deposition chamber, supplying high frequency electrical power to said first electrode and to said second electrode, thereby depositing the first film on said substrate by CVD, removing remaining reactive gases and the dummy target from the deposition chamber, and forming a second film on the substrate by a sputtering process by: attaching a sputtering target to said first electrode, supplying reactive gas into said deposition chamber, simultaneously supplying high frequency electrical power to said first electrode and to said second electrode, thereby depositing the second film on said substrate by sputtering, wherein the steps of forming the first film and forming the second film are carried out successively without exposing said substrate to an oxidative atmosphere.
Claim 2
Independent Claim
190 words
A method for forming thin films in a single pressure-reducible deposition chamber having spaced-apart first and second electrodes, the method comprising the steps of: forming a first film by chemical vapor deposition (CVD) by: attaching a dummy target to the first electrode, the dummy target being formed from a material which resists reaction during CVD, thereby preventing contamination of the first film, attaching a substrate to said second electrode, supplying reactive gas into said deposition chamber, supplying high frequency electrical power to said first electrode and to said second electrode, thereby depositing the first film on said substrate by CVD, removing remaining reactive gases and the dummy target from the deposition chamber, and forming a second film on the substrate by a sputtering process by: attaching a sputtering target to said first electrode, supplying reactive gas into said deposition chamber, simultaneously supplying high frequency electrical power to said first electrode and to said second electrode, thereby depositing the second film on said substrate by sputtering, wherein the steps of forming the first film and forming the second film are carried out successively without exposing said substrate to an oxidative atmosphere.
Claim 3
Dependent Claim
89 words
The method of claim 1, wherein the step of attaching the dummy target to the first electrode comprises removing the dummy target from a storage chamber disposed adjacent the deposition chamber by an automated transfer mechanism, wherein the step of removing the dummy target from the first electrode comprises replacing the dummy target in the deposition chamber using the automated transfer mechanism, and wherein the step of attaching the sputtering target to the first electrode comprises removing the sputtering target from the storage chamber using the automated transfer mechanism.
Claim 4
Independent Claim
191 words
A method for forming thin films in a single pressure-reducible deposition chamber having spaced-apart first and second electrodes, the method comprising the steps of: forming a first film by a sputtering process by: attaching a sputtering target to the first electrode, attaching a substrate to the second electrode, supplying reactive gas into the deposition chamber, simultaneously supplying high frequency electrical power to the first electrode and to the second electrode, thereby depositing the first film on the substrate by sputtering, and removing remaining sputtering gases and the sputtering target from the deposition chamber; and forming a second film on the substrate by chemical vapor deposition (CVD) by: attaching a dummy target to the first electrode, the dummy target being formed from a material which resists reaction during CVD, thereby preventing contamination of the second film, supplying reactive gas into the deposition chamber, supplying high frequency electrical power to the first electrode and to the second electrode, thereby depositing the second film on the substrate by CVD, wherein the steps of forming the first film and forming the second film are carried out successively without exposing the substrate to an oxidative atmosphere.
Claim 5
Independent Claim
191 words
A method for forming thin films in a single pressure-reducible deposition chamber having spaced-apart first and second electrodes, the method comprising the steps of: forming a first film by a sputtering process by: attaching a sputtering target to the first electrode, attaching a substrate to the second electrode, supplying reactive gas into the deposition chamber, simultaneously supplying high frequency electrical power to the first electrode and to the second electrode, thereby depositing the first film on the substrate by sputtering, and removing remaining sputtering gases and the sputtering target from the deposition chamber; and forming a second film on the substrate by chemical vapor deposition (CVD) by: attaching a dummy target to the first electrode, the dummy target being formed from a material which resists reaction during CVD, thereby preventing contamination of the second film, supplying reactive gas into the deposition chamber, supplying high frequency electrical power to the first electrode and to the second electrode, thereby depositing the second film on the substrate by CVD, wherein the steps of forming the first film and forming the second film are carried out successively without exposing the substrate to an oxidative atmosphere.
Claim 6
Dependent Claim
89 words
The method of claim 3, wherein the step of attaching the sputtering target to the first electrode comprises removing the sputtering target from a storage chamber disposed adjacent the deposition chamber by an automated transfer mechanism, wherein the step of removing the sputtering target from the first electrode comprises replacing the sputtering target in the deposition chamber using the automated transfer mechanism, and wherein the step of attaching the dummy target to the first electrode comprises removing the dummy target from the storage chamber using the automated transfer mechanism.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-10 | 2000-09-09 | 2001-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-10 | 2004-09-09 | 2005-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-10 | 2008-09-09 | 2009-03-11 | $7700.00 | Window Closed / Lapsed |