US5937289A
Expired / Lapsed
US
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Providing dual work function doping
Assignee: International Business Machines Corp
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Filing: 1998-01-06
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Granted: 1999-08-10
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Expires: 2018-01-06
Abstract
Abstract Dual work function doping is provided by doping a selected number of gate structures having self-aligned insulating layer on top of the structures through at least one side wall of the gate structures with a first conductivity type to thereby provide an array of gate structures whereby some are doped with the first conductivity type and others of the gate structures are doped with a second and different conductivity type. Also provided is an array of gate structures whereby the individual gate structures contain self-aligned insulating layer on their top portion and wherein some of the gate structures are doped with a first conductivity type and other of the gate structures are doped with a second and different conductivity type.
Inventors
- 👤 Gary Bela Bronner
- 👤 Jeffrey P. Gambino
- 👤 Jack A. Mandelman
- 👤 Carl J. Radens
- 👤 William Robert Tonti
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:43
CPC Classifications
H; H10; H10P; H10P10/00; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0135; H10D84/014; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
135 words
A process for providing dual work function doping which comprises: providing a semiconductor substrate; providing a first insulating layer over said semiconductor substrate; depositing a gate conductor on said insulating layer; depositing a second insulating layer on said gate conductor; delineating said second insulating layer and said gate conductor to form gate structures with said second insulating layer self-aligned on the top of said gate structure; then doping a selected number of gate structures, less than all of said gate structures, through at least one side wall of said selected number of said gate structures, with a first conductivity type to provide an array of gate structures whereby some of said gate structures are doped with said first conductivity type and other of said gate structures are doped with a second and different conductivity type.
Claim 2
Dependent Claim
135 words
A process for providing dual work function doping which comprises: providing a semiconductor substrate; providing a first insulating layer over said semiconductor substrate; depositing a gate conductor on said insulating layer; depositing a second insulating layer on said gate conductor; delineating said second insulating layer and said gate conductor to form gate structures with said second insulating layer self-aligned on the top of said gate structure; then doping a selected number of gate structures, less than all of said gate structures, through at least one side wall of said selected number of said gate structures, with a first conductivity type to provide an array of gate structures whereby some of said gate structures are doped with said first conductivity type and other of said gate structures are doped with a second and different conductivity type.
Claim 3
Dependent Claim
20 words
The process of claim 1 wherein said step of depositing a gate conductor comprises depositing a P-doped polysilicon gate conductor.
Claim 4
Dependent Claim
49 words
The process of claim 2 wherein said step of doping a selected number of gate structures comprises providing a N-type doped silicate glass on side walls of those gates that are to be N-type gates followed by causing said N-dopant from said silicate glass to diffuse into said polysilicon.
Claim 5
Dependent Claim
14 words
The process of claim 3 wherein said doped silicate glass is phosphorus silicate glass.
Claim 6
Dependent Claim
19 words
The process of claim 3 which further includes removing the silicate glass from said side walls after said doping.
Claim 7
Dependent Claim
28 words
The process of claim 3 which further includes providing gate oxide side walls, nitride gate side wall spacers after said doping and providing source and drain selected implants.
Claim 8
Dependent Claim
26 words
The process of claim 3 wherein said second insulating layer is selected from the group consisting of silicon nitride, silicon dioxide, silicon oxynitride, and boron nitride.
Claim 9
Dependent Claim
13 words
The process of claim 3 wherein said second insulating layer is silicon nitride.
Claim 10
Dependent Claim
18 words
The process of claim 1 wherein said doping a selected number of gate structures comprises angle ion implantation.
Claim 11
Dependent Claim
25 words
The process of claim 1 wherein said doping said selected number of gate structures comprises subjecting said gate structures to a gas containing said dopant.
Claim 12
Dependent Claim
13 words
The process of claim 10 wherein said gas is arsine, phosphine or diborane.
Claim 13
Dependent Claim
29 words
The process of claim 1 wherein said second insulating layer is from a material selected from the group consisting of silicon nitride, silicon dioxide, silicon oxynitride and boron nitride.
Claim 14
Dependent Claim
13 words
The process of claim 1 wherein said second insulating layer is silicon nitride.
Claim 15
Dependent Claim
24 words
The process of claim 1 wherein said first insulating layer is selected from the group consisting of silicon dioxide, silicon nitride and silicon oxynitride.
Claim 16
Dependent Claim
13 words
The process of claim 1 wherein said first insulating layer is silicon dioxide.
Claim 17
Dependent Claim
13 words
The process of claim 13 wherein said first insulating layer is silicon dioxide.
Claim 18
Dependent Claim
24 words
The process of claim 1 wherein the selected number of gate structures are doped with said first conductivity type distributed throughout said gate structures.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-09 | 2003-02-08 | 2003-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-09 | 2007-02-08 | 2007-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-09 | 2011-02-08 | 2011-08-10 | $7700.00 | Window Closed / Lapsed |