US5936299A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Substrate contact for integrated spiral inductors
Assignee: GlobalFoundries Inc
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Filing: 1997-03-13
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Granted: 1999-08-10
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Expires: 2017-03-13
Abstract
Abstract An inductor structure includes an inductor spiral coil formed on a substrate; and a substrate contact connected to the substrate and disposed within a predetermined distance to the inductor spiral coil to increase the quality-factor (Q) characteristics associated with the inductor structure, and also does not increase eddy currents in the substrate. The substrate contact provides for implementation of the inductor structure as a spiral inductor which is integrated on a silicon substrate. The substrate contact determines the energy potential substantially adjacent to the inductor for reducing the noise level. In an implementation of an inductor in an RF circuit, the substrate contact contributes to providing an increased Q.
Inventors
- 👤 Joachim Norbert Burghartz
- 👤 Keith Aelwyn Jenkins
- 👤 Mehmet Soyuer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:08
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/20
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
62 words
An inductor structure comprising: an inductor spiral formed on a semiconductor substrate occupying an inductor spiral region; and a substrate contact connected to the substrate and disposed within a predetermined distance to the inductor spiral at least partially enclosing the inductor spiral region to increase quality-factor Q characteristics associated with the inductor structure, the quality-factor Q being increased to greater than five.
Claim 2
Dependent Claim
62 words
An inductor structure comprising: an inductor spiral formed on a semiconductor substrate occupying an inductor spiral region; and a substrate contact connected to the substrate and disposed within a predetermined distance to the inductor spiral at least partially enclosing the inductor spiral region to increase quality-factor Q characteristics associated with the inductor structure, the quality-factor Q being increased to greater than five.
Claim 3
Dependent Claim
23 words
The inductor structure of claim 1, wherein the inductor spiral is disposed upon an isolation layer between the inductor spiral and the substrate.
Claim 4
Dependent Claim
32 words
The inductor structure of claim 1, wherein the substrate contact includes: a diffused region having a doping substantially identical to the doping of a channel stop region connected to the diffused region.
Claim 5
Dependent Claim
41 words
The inductor structure of claim 1, wherein the substrate contact includes: a diffused region having a doping opposite to the doping of a channel stop region, wherein the diffused region is separated from the channel stop region by a predetermined spacing.
Claim 6
Dependent Claim
28 words
The inductor structure of claim 1, wherein the inductor spiral includes at least one port connected to ground for operation of the inductor structure in a one-port configuration.
Claim 7
Dependent Claim
34 words
The inductor structure of claim 1, wherein the inductor spiral includes at least two ports, with each port respectively connected to elements having impedances for operation of the inductor structure in a two-port configuration.
Claim 8
Dependent Claim
19 words
The inductor structure of claim 1, wherein the inductor spiral receives signals having frequencies of at least 1 GHz.
Claim 9
Dependent Claim
74 words
A spiral inductor structure comprising: a semiconductor substrate; an inductor spiral formed on the substrate occupying an inductor spiral region; and a plurality of substrate contacts formed on the substrate and at least partially enclosing the inductor spiral region, wherein the plurality of substrate contacts are disposed within a predetermined distance to the inductor spiral to increase quality-factor Q characteristics associated with the inductor structure, the quality-factor Q being increased to greater than five.
Claim 10
Dependent Claim
74 words
A spiral inductor structure comprising: a semiconductor substrate; an inductor spiral formed on the substrate occupying an inductor spiral region; and a plurality of substrate contacts formed on the substrate and at least partially enclosing the inductor spiral region, wherein the plurality of substrate contacts are disposed within a predetermined distance to the inductor spiral to increase quality-factor Q characteristics associated with the inductor structure, the quality-factor Q being increased to greater than five.
Claim 11
Dependent Claim
29 words
The inductor structure of claim 8, further comprising: an isolation layer; and wherein the inductor spiral is disposed upon the isolation layer between the inductor spiral and the substrate.
Claim 12
Dependent Claim
47 words
The inductor structure of claim 8, further comprising: a channel stop region connected to the substrate; and wherein each of the plurality of substrate contacts includes: a diffused region having a doping substantially identical to the doping of the channel stop region connected to the diffused region.
Claim 13
Dependent Claim
56 words
The inductor structure of claim 8, further comprising: a channel stop region connected to the substrate; and wherein each of the plurality of substrate contacts includes: a diffused region having a doping opposite to the doping of the channel stop region, wherein the diffused region is separated from the channel stop region by a predetermined spacing.
Claim 14
Dependent Claim
28 words
The inductor structure of claim 8, wherein the inductor spiral includes at least one port connected to ground for operation of the inductor structure in a one-port configuration.
Claim 15
Dependent Claim
34 words
The inductor structure of claim 8, wherein the inductor spiral includes at least two ports, with each port respectively connected to elements having impedances for operation of the inductor structure in a two-port configuration.
Claim 16
Dependent Claim
19 words
The inductor structure of claim 8, wherein the inductor spiral receives signals having frequencies of at least 1 GHz.
Claim 17
Dependent Claim
11 words
The inductor structure of claim 8, wherein the substrate includes silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-09 | 2003-02-08 | 2003-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-09 | 2007-02-08 | 2007-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-09 | 2011-02-08 | 2011-08-10 | $7700.00 | Window Closed / Lapsed |