Patent US5933760A successfully refreshed from Google Patents.
US5933760A
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Method and apparatus for reducing fixed charge in semiconductor device layers
Assignee: Micron Technology Inc
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Filing: 1997-11-18
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Granted: 1999-08-03
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Expires: 2017-11-18
Abstract
Abstract The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O 3 . When done at temperatures higher than approximately 480 degrees C., the carbon level in the resulting film appears to be reduced, resulting in a higher threshold voltage for field transistor devices.
Inventors
- 👤 Ravi Iyer
- 👤 Randhir P. S. Thakur
- 👤 Howard E. Rhodes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:28
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6922; H10P14/6923; H10P14/6924
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
84 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to greater than 500 degrees C. but less than 750 degrees C.; and depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of the heated deposition chamber at a pressure greater than 200 Torr.
Claim 2
Independent Claim
84 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to greater than 500 degrees C. but less than 750 degrees C.; and depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of the heated deposition chamber at a pressure greater than 200 Torr.
Claim 3
Dependent Claim
32 words
The method of claim 1 wherein O 2 is also provided within the deposition chamber, and the concentration of O 3 in O 2 is between approximately 13 and 20% by weight.
Claim 4
Dependent Claim
17 words
The method of claim 2 wherein the concentration of O 3 in O 2 is approximately 13%.
Claim 5
Dependent Claim
27 words
The method of claim 2 wherein the step of providing O 3 in the chamber comprises the step of flowing O 2 in a corona discharge tube.
Claim 6
Dependent Claim
20 words
The method of claim 3 wherein the step of depositing silicon dioxide comprises the step of reacting tetraethyloxysilicate with ozone.
Claim 7
Dependent Claim
25 words
The method of claim 5 and further comprising the step of reflowing the thin film at a temperature of approximately 907 degrees C. or greater.
Claim 8
Dependent Claim
24 words
The method of claim 1 wherein the organometallic precursor is used to dope the thin film with at least one of phosphorous and boron.
Claim 9
Dependent Claim
17 words
The method of claim 7 wherein the organometallic precursor comprises at least one of triethylborane and triethylphosphate.
Claim 10
Dependent Claim
20 words
The method of claim 1 wherein a resulting thin film comprises fewer than 10 18 carbon atoms per cubic centimeter.
Claim 11
Independent Claim
71 words
A method for reduction of fixed charge in an insulating film utilized in semiconductor devices, comprising the steps of: a) reacting material source gases, including at least one organic precursor for deposition; b) depositing material from the source gases on said semiconductor devices in an atmosphere containing O 3 at a temperature greater than 500 degrees C. and less than 750 degrees C. and at a pressure greater than 200 Torr.
Claim 12
Independent Claim
71 words
A method for reduction of fixed charge in an insulating film utilized in semiconductor devices, comprising the steps of: a) reacting material source gases, including at least one organic precursor for deposition; b) depositing material from the source gases on said semiconductor devices in an atmosphere containing O 3 at a temperature greater than 500 degrees C. and less than 750 degrees C. and at a pressure greater than 200 Torr.
Claim 13
Dependent Claim
12 words
The method of claim 10 wherein the deposited material is borophosphosilicate glass.
Claim 14
Dependent Claim
12 words
The method of claim 11 wherein said material source gases comprise tetraethyloxysilicate.
Claim 15
Dependent Claim
17 words
The method of claim 12 wherein said material source gases comprise tetraethyloxysilicate, mixed with triethylphosphate and triethylborane.
Claim 16
Dependent Claim
20 words
The method of claim 10 wherein the O 3 is formed by flowing O 2 in a corona discharge tube.
Claim 17
Dependent Claim
24 words
The method of claim 14 wherein the O 2 is flowed at a rate of between approximately 2000 to 8000 cubic centimeters per minute.
Claim 18
Dependent Claim
29 words
The method of claim 15 wherein said the concentration of O 3 in O 2 provided by the corona discharge tube is between approximately 13 and 20% by weight.
Claim 19
Dependent Claim
17 words
The method of claim 16 wherein the concentration of O 3 in O 2 is approximately 13%.
Claim 20
Independent Claim
72 words
A method for reduction of fixed charge in a tetraethyloxysilicate-based borophosphosilicate glass insulating film utilized in semiconductor devices, comprising the steps of: a) reacting material source gases including at least one organic precursor for deposition; b) depositing material from the source gases on said semiconductor device at a temperature of greater than 500 degrees Celsius in an atmosphere containing O 2 and O 3 and at a pressure greater than 200 Torr.
Claim 21
Independent Claim
72 words
A method for reduction of fixed charge in a tetraethyloxysilicate-based borophosphosilicate glass insulating film utilized in semiconductor devices, comprising the steps of: a) reacting material source gases including at least one organic precursor for deposition; b) depositing material from the source gases on said semiconductor device at a temperature of greater than 500 degrees Celsius in an atmosphere containing O 2 and O 3 and at a pressure greater than 200 Torr.
Claim 22
Dependent Claim
16 words
The method of claim 18 wherein tetraethyloxysilicate, triethylborane and O 3 are the source gases reacted.
Claim 23
Dependent Claim
16 words
The method of claim 18 wherein tetraethyloxysilicate, triethylphosphate and O 3 are the source gases reacted.
Claim 24
Independent Claim
76 words
A method of forming a thin film of borophosphosilicate glass on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to greater than 500 degrees C. and less than 750 degrees C. and a pressure of greater than 200 Torr; and depositing borophosphosilicate glass onto the semiconductor device at such temperature using an organic precursor.
Claim 25
Independent Claim
76 words
A method of forming a thin film of borophosphosilicate glass on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to greater than 500 degrees C. and less than 750 degrees C. and a pressure of greater than 200 Torr; and depositing borophosphosilicate glass onto the semiconductor device at such temperature using an organic precursor.
Claim 26
Independent Claim
79 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to approximately 510 degrees C.; and depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of approximately 510 degrees C. and at a pressure of greater than 200 Torr.
Claim 27
Independent Claim
79 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to approximately 510 degrees C.; and depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of approximately 510 degrees C. and at a pressure of greater than 200 Torr.
Claim 28
Independent Claim
97 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing oxygen at concentrations of between greater than 10% to approximately 20% O 3 in O 2 within the deposition chamber; heating the deposition chamber to greater than approximately 480 degrees C.; and depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of greater than approximately 480 degrees C. and at a pressure of greater than 200 Torr.
Claim 29
Independent Claim
97 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing oxygen at concentrations of between greater than 10% to approximately 20% O 3 in O 2 within the deposition chamber; heating the deposition chamber to greater than approximately 480 degrees C.; and depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of greater than approximately 480 degrees C. and at a pressure of greater than 200 Torr.
Claim 30
Dependent Claim
17 words
The method of claim 23 wherein the concentration of O 3 in O 2 is approximately 13%.
Claim 31
Independent Claim
100 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to greater than approximately 480 degrees C.; depositing silicon dioxide using an organometallic precursor onto the semiconductor device to form the thin film of glass at the temperature of greater than approximately 480 degrees C.; and then reflowing, after the depositing step, the thin film at a temperature of at least approximately 907 degrees C.
Claim 32
Independent Claim
100 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to greater than approximately 480 degrees C.; depositing silicon dioxide using an organometallic precursor onto the semiconductor device to form the thin film of glass at the temperature of greater than approximately 480 degrees C.; and then reflowing, after the depositing step, the thin film at a temperature of at least approximately 907 degrees C.
Claim 33
Independent Claim
88 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to greater than approximately 480 degrees C.; and depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of greater than approximately 480 degrees C. and at a pressure of between greater than 200 Torr to approximately 760 Torr.
Claim 34
Independent Claim
88 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to greater than approximately 480 degrees C.; and depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of greater than approximately 480 degrees C. and at a pressure of between greater than 200 Torr to approximately 760 Torr.
Claim 35
Independent Claim
116 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing oxygen at concentrations of between greater than 10% to approximately 20% O 3 in O 2 within the deposition chamber; heating the deposition chamber to greater than approximately 480 degrees C.; depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of greater than approximately 480 degrees C. and at a pressure of between greater than 200 Torr to approximately 760 Torr; and reflowing the thin film at a temperature of at least approximately 907 degrees C.
Claim 36
Independent Claim
116 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing oxygen at concentrations of between greater than 10% to approximately 20% O 3 in O 2 within the deposition chamber; heating the deposition chamber to greater than approximately 480 degrees C.; depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of greater than approximately 480 degrees C. and at a pressure of between greater than 200 Torr to approximately 760 Torr; and reflowing the thin film at a temperature of at least approximately 907 degrees C.
Claim 37
Independent Claim
129 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to greater than approximately 480 degrees C.; and depositing silicon dioxide using TEPO and TEB onto the semiconductor device at the temperature of greater than approximately 480 degrees C. such that a film of BPSG is formed on the semiconductor device comprising fewer than 10 18 carbon atoms per cubic centimeter and comprising boron and phosphorous in concentrations of at least approximately 0.5% each; and then reflowing, after the depositing step, the silicon dioxide at a temperature of at least approximately 907 degree C.
Claim 38
Independent Claim
129 words
A method of forming a thin film of glass having a low fixed charge on a semiconductor device in a deposition chamber comprising the steps of: positioning a semiconductor device in the deposition chamber; providing O 3 within the deposition chamber; heating the deposition chamber to greater than approximately 480 degrees C.; and depositing silicon dioxide using TEPO and TEB onto the semiconductor device at the temperature of greater than approximately 480 degrees C. such that a film of BPSG is formed on the semiconductor device comprising fewer than 10 18 carbon atoms per cubic centimeter and comprising boron and phosphorous in concentrations of at least approximately 0.5% each; and then reflowing, after the depositing step, the silicon dioxide at a temperature of at least approximately 907 degree C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-02 | 2003-02-01 | 2003-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-02 | 2007-02-01 | 2007-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-02 | 2011-02-01 | 2011-08-03 | $7700.00 | Window Closed / Lapsed |