Method for optimizing thermal budgets in fabricating semconductors

Abstract

Abstract The present invention teaches a method for fabricating semiconductors. The method initially comprises the step of forming a conformal layer superjacent at least two conductive layers. The conformal layer preferably comprises tetraethylorthosilicate ("TEOS") and has a thickness of at least 50 ANGSTROM . Subsequently, a barrier layer is formed superjacent the conformal layer to prevent subsequent layers from diffusing into active regions. The barrier layer preferably comprises Si3N4, though other suitable materials known to one of ordinary skill in the art may be employed. Further, a glass layer is then formed superjacent the barrier layer. The glass layer comprises at least one of SiO2, phosphosilicate glass, borosilicate glass, and borophosphosilicate glass, and has a thickness of at least 1 k ANGSTROM . Upon forming the glass layer, the glass layer is heated to a temperature of at least 800 DEG C. for at least 15 minutes while introducing H2 and O2 at a substantially high temperature to cause vaporization, thereby causing the glass layer to reflow. Next, the glass layer is exposed to a gas and radiant energy for approximately 5 seconds to 60 seconds, thereby making said glass layer substantially planar. The radiant energy generates a temperature substantially within the range of 700 DEG C. to 1250 DEG C. Further, the gas comprises at least one of N2, NH3, O2, N2O, Ar, Ar-H2, H2, GeH4, and a Fluorine based gas.

Inventors

• 👤 Randhir P. S. Thakur

Bibliographic Details