US5923962A — Method for manufacturing a semiconductor device

Claim 1

Independent Claim 90 words

A method for manufacturing a semiconductor device comprising the steps of: preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon; disposing said solution in contact with at least a portion of a semiconductor film comprising silicon on an insulating surface; forming a continuous layer containing said catalyst in contact with said semiconductor film; and crystallizing said semiconductor film by heating, wherein said catalyst is included in said solution at a concentration of 200 ppm or lower.

Claim 2

Independent Claim 90 words

A method for manufacturing a semiconductor device comprising the steps of: preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon; disposing said solution in contact with at least a portion of a semiconductor film comprising silicon on an insulating surface; forming a continuous layer containing said catalyst in contact with said semiconductor film; and crystallizing said semiconductor film by heating, wherein said catalyst is included in said solution at a concentration of 200 ppm or lower.

Claim 3

Dependent Claim 29 words

A method according to claim 1 wherein said catalyst comprises a material selected from the group consisting of Ni, Pt, Cu, Ag, Au, In, Sn, P, As, and Sb.

Claim 4

Dependent Claim 20 words

A method according to claim 1 wherein said catalyst is included in said solution at a concentration of 1-200 ppm.

Claim 5

Dependent Claim 19 words

A method according to claim 1 wherein concentration of the catalyst in the solution is 50 ppm or lower.

Claim 6

Dependent Claim 19 words

A method according to claim 1 wherein concentration of the catalyst in the solution is 10 ppm or lower.

Claim 7

Dependent Claim 12 words

A method according to claim 1 wherein said semiconductor film is amorphous.

Claim 8

Dependent Claim 20 words

A method according to claim 1 wherein said solution is maintained in contact with said semiconductor film before said crystallizing.

Claim 9

Dependent Claim 37 words

A method according to claim 7 wherein concentration of the catalyst which is introduced in to the semiconductor film is controlled by changing a period in which said solution is maintained in contact with the semiconductor film.

Claim 10

Dependent Claim 28 words

A method according to claim 1 further comprising the steps of increasing the crystallinity of said semiconductor film by irradiating said film with light after the crystallizing step.

Claim 11

Dependent Claim 21 words

A method according to claim 1 wherein said liquid is selected from the group consisting of water, alcohol, acid and ammonium.

Claim 12

Dependent Claim 22 words

A method according to claim 1 further comprising the step of interposing an oxide film between said solution and said semiconductor film.

Claim 13

Dependent Claim 24 words

A method according to claim 1 wherein said liquid is selected from the group consisting of benzene, toluene, xylene, carbon tetrachloride, chloroform and ether.

Claim 14

Dependent Claim 13 words

A method according to claim 1 wherein said liquid is a polar solvent.

Claim 15

Dependent Claim 47 words

A method according to claim 13 wherein said substance is a compound selected from the group consisting of nickel bromide, nickel acetate, nickel oxalate, nickel carbonate, nickel chloride, nickel iodide, nickel nitrate, nickel sulfate, nickel formate, nickel acetyl acetonate, 4-cyclohexyl butyric acid, nickel oxide and nickel hydroxide.

Claim 16

Dependent Claim 13 words

A method according to claim 1 wherein said liquid is a non-polar solvent.

Claim 17

Dependent Claim 26 words

A method according to claim 15 wherein said substance is a compound selected from the group consisting of nickel acetyl acetonate and 2-ethyl hexanoic acid nickel.

Claim 18

Dependent Claim 31 words

A method according to claim 1 wherein said catalyst comprises a material selected from the group consisting of the elements of Group VIII, IIIb, IVb, and Vb of the periodic table.

Claim 19

Independent Claim 153 words

A method for manufacturing a semiconductor device comprising the steps of: preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon; disposing said solution in contact with at least a first region of a semiconductor film comprising silicon on an insulating surface; forming a continuous layer including said catalyst in contact with said first region of said semiconductor film; and heating said semiconductor film in order that crystals grow from said first region toward a second region of the semiconductor film adjacent to said first region in a direction parallel with a surface of said semiconductor film; patterning said semiconductor film into an island to form an active region of said semiconductor, said island excluding said first region of the semiconductor film, wherein said semiconductor film comprises said catalyst at a concentration not higher than 1×10 19 cm -3 .

Claim 20

Independent Claim 153 words

A method for manufacturing a semiconductor device comprising the steps of: preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon; disposing said solution in contact with at least a first region of a semiconductor film comprising silicon on an insulating surface; forming a continuous layer including said catalyst in contact with said first region of said semiconductor film; and heating said semiconductor film in order that crystals grow from said first region toward a second region of the semiconductor film adjacent to said first region in a direction parallel with a surface of said semiconductor film; patterning said semiconductor film into an island to form an active region of said semiconductor, said island excluding said first region of the semiconductor film, wherein said semiconductor film comprises said catalyst at a concentration not higher than 1×10 19 cm -3 .

Claim 21

Dependent Claim 33 words

A method according to claim 18 wherein said crystallization promoting material is contained in the first region of the semiconductor film at a higher concentration than in the second region after said heating.

Claim 22

Dependent Claim 30 words

A method according to claim 18 wherein said catalyst comprises a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As, and Sb.

Claim 23

Dependent Claim 31 words

A method according to claim 18 wherein said catalyst comprises a material selected from the group consisting of the elements of Group VIII, IIIb, IVb, and Vb of the periodic table.

Claim 24

Independent Claim 131 words

A method for manufacturing a semiconductor device comprising the steps of: preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon; disposing said solution in contact with at least a first portion of a semiconductor film comprising silicon on an insulating surface; heating said semiconductor film in order that crystals grow from said first portion toward a second portion of the semiconductor film to which said crystallization promoting material is not added, and forming said semiconductor device by using said second portion of the semiconductor film as an active region of said semiconductor device, said active region excluding said first portion, wherein said semiconductor film comprises said catalyst at a concentration of 1×10 19 atoms/cm 3 or less.

Claim 25

Independent Claim 131 words

A method for manufacturing a semiconductor device comprising the steps of: preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon; disposing said solution in contact with at least a first portion of a semiconductor film comprising silicon on an insulating surface; heating said semiconductor film in order that crystals grow from said first portion toward a second portion of the semiconductor film to which said crystallization promoting material is not added, and forming said semiconductor device by using said second portion of the semiconductor film as an active region of said semiconductor device, said active region excluding said first portion, wherein said semiconductor film comprises said catalyst at a concentration of 1×10 19 atoms/cm 3 or less.

Claim 26

Dependent Claim 30 words

A method according to claim 22 wherein said catalyst comprises a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As, and Sb.

Claim 27

Dependent Claim 31 words

A method according to claim 22 wherein said catalyst comprises a material selected from the group consisting of the elements of Group VIII, IIIb, IVb, and Vb of the periodic table.

Claim 28

Independent Claim 78 words

A method for manufacturing a semiconductor device comprising the steps of: preparing a solution containing a substance dissolved or dispersed in a liquid, said substance containing a catalyst for promoting a crystallization of silicon, and said liquid including an interfacial active agent; disposing said solution in contact with a semiconductor film comprising silicon on an insulating surface; forming a continuous layer containing said catalyst in contact with said semiconductor film; and then crystallizing said semiconductor film by heating.

Claim 29

Independent Claim 78 words

A method for manufacturing a semiconductor device comprising the steps of: preparing a solution containing a substance dissolved or dispersed in a liquid, said substance containing a catalyst for promoting a crystallization of silicon, and said liquid including an interfacial active agent; disposing said solution in contact with a semiconductor film comprising silicon on an insulating surface; forming a continuous layer containing said catalyst in contact with said semiconductor film; and then crystallizing said semiconductor film by heating.

Claim 30

Dependent Claim 44 words

The method of claim 25 wherein said substrate is selected from the group consisting of nickel bromide, nickel acetate, nickel oxalate, nickel carbonate, nickel chloride, nickel iodide, nickel nitrate, nickel sulfate, nickel formate, nickel acetyl acetonate, 4-cyclohexyl butyric acid, nickel oxide and nickel hydroxide.

Claim 31

Dependent Claim 30 words

A method according to claim 25 wherein said catalyst comprises a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As, and Sb.

Claim 32

Dependent Claim 31 words

A method according to claim 25 wherein said catalyst comprises a material selected from the group consisting of the elements of Group VIII, IIIb, IVb, and Vb of the periodic table.

Claim 33

Independent Claim 93 words

A method for manufacturing a semiconductor device comprising the steps of: preparing a solution containing a substance dissolved or dispersed in a liquid, said substance containing a catalyst for promoting a crystallization of silicon; forming a semiconductor film on an insulating film; forming a thin oxide film in contact with said semiconductor film; disposing said solution in contact with at least a portion of said semiconductor film through said thin oxide film; forming a continuous layer including said substance in contact with said semiconductor film; and then crystallizing said semiconductor film by heating.

Claim 34

Independent Claim 93 words

A method for manufacturing a semiconductor device comprising the steps of: preparing a solution containing a substance dissolved or dispersed in a liquid, said substance containing a catalyst for promoting a crystallization of silicon; forming a semiconductor film on an insulating film; forming a thin oxide film in contact with said semiconductor film; disposing said solution in contact with at least a portion of said semiconductor film through said thin oxide film; forming a continuous layer including said substance in contact with said semiconductor film; and then crystallizing said semiconductor film by heating.

Claim 35

Dependent Claim 39 words

A method according to claim 29 further comprising the step of irradiating said semiconductor film with laser light in order to further crystallize said semiconductor layer after said heating after said semiconductor film is crystallized by said heating step.

Claim 36

Dependent Claim 30 words

A method according to claim 29 wherein said catalyst comprises a material selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As, and Sb.

Claim 37

Dependent Claim 31 words

A method according to claim 29 wherein said catalyst comprises a material selected from the group consisting of the elements of Group VIII, IIIb, IVb, and Vb of the periodic table.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2002-07-12	2003-01-11	2003-07-13	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2006-07-12	2007-01-11	2007-07-13	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2010-07-12	2011-01-11	2011-07-13	$7700.00	Window Closed / Lapsed

Method for manufacturing a semiconductor device

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