US5916694A
Expired / Lapsed
US
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Magneto-resistance element
Assignee: NEC Corp
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Filing: 1997-10-06
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Granted: 1999-06-29
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Expires: 2017-10-06
Abstract
Abstract A silicon dioxide passivation film highly resistant to humidity is formed to prevent the deterioration of the magnetic effects, to increase the resistance variation rate and to reduce the internal stresses of the ferromagnetic metal film of the MR element. After forming the ferromagnetic metal film, the silicon dioxide film is formed by a TEOS-O3-based atmospheric pressure CVD method in a state where the substrate temperature is kept at or below 350 DEG C. The silicon dioxide film is not doped with phosphorus and sits thickness is kept within 1 mu m. On the other hand, apart from the above-described structure, the silicon dioxide film may as well consist of two layers, one doped with and the other not doped with phosphorus. Another method used to form the silicon dioxide film is an HMDS-O3-based atmospheric pressure CVD method. As film formation is thereby possible at a substrate temperature of not more than 300 DEG C., the magnetic effects of the ferromagnetic metal film are prevented from deterioration.
Inventors
- 👤 Kazuyoshi Tokura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 00:59
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11B5/31; G11B5/3103; G11B5/3106; G11B5/3109; G11B5/313; G11B5/3143; G11B5/40; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10T; Y10T428/00; Y10T428/11; Y10T428/1107; Y10T428/1121; Y10T428/12; Y10T428/12465; Y10T428/12493; Y10T428/12632; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
79 words
A magneto-resistance (MR) element comprising: a silicon substrate; a magnetic film having magnetoresistance effect on said substrate, said magnetic film consisting of a layer of NiFe, a layer of Au and a layer of Cr; and a TEOS-O 3 -based atmospheric pressure chemical vapor deposition silicon dioxide film formed in at least the region of said substrate having said magnetic film, said silicon dioxide film formed where the temperature of said substrate was kept at or below 350° C.
Claim 2
Dependent Claim
79 words
A magneto-resistance (MR) element comprising: a silicon substrate; a magnetic film having magnetoresistance effect on said substrate, said magnetic film consisting of a layer of NiFe, a layer of Au and a layer of Cr; and a TEOS-O 3 -based atmospheric pressure chemical vapor deposition silicon dioxide film formed in at least the region of said substrate having said magnetic film, said silicon dioxide film formed where the temperature of said substrate was kept at or below 350° C.
Claim 3
Dependent Claim
25 words
An MR element, as claimed in claim 1, in which said silicon dioxide film was formed where said temperature was at or below 300° C.
Claim 4
Dependent Claim
31 words
An MR element, as claimed in claim 2, wherein said silicon dioxide film is a film which is not doped with phosphorus and whose thickness is not more than 1 μm.
Claim 5
Dependent Claim
49 words
An MR element, as claimed in claim 2, wherein said silicon dioxide film consists of two layers which are a phosphorus-doped silicon dioxide film and a silicon dioxide film not doped with phosphorus, and the total thickness of said double-layered silicon dioxide film is not more than 2 μm.
Claim 6
Dependent Claim
81 words
An Mr element which is a magnetic film having magneto-resistance effect on a silicon substrate whose surface at least in the region of said substrate having said magnetic film is coated with a silicon dioxide film, said silicon dioxide film having been formed by hexamethyldisiloxane-O 3 -based atmospheric temperature chemical vapor deposition while keeping the substrate temperature at or below 300° C. and said magnetic film consisting of a layer of NiFe, a layer of Au and a layer of Cr.
Claim 7
Dependent Claim
81 words
An Mr element which is a magnetic film having magneto-resistance effect on a silicon substrate whose surface at least in the region of said substrate having said magnetic film is coated with a silicon dioxide film, said silicon dioxide film having been formed by hexamethyldisiloxane-O 3 -based atmospheric temperature chemical vapor deposition while keeping the substrate temperature at or below 300° C. and said magnetic film consisting of a layer of NiFe, a layer of Au and a layer of Cr.
Claim 8
Dependent Claim
23 words
An MR element, as claimed in claim 5, wherein said silicon dioxide film was formed at a temperature at or below 280° C.
Claim 9
Dependent Claim
31 words
An MR element, as claimed in claim 5, wherein said silicon dioxide film is a film which is not doped with phosphorus and whose thickness is not more than 2 μm.
Claim 10
Dependent Claim
49 words
An MR element, as claimed in claim 5, wherein said silicon dioxide film consists of two layers which are a phosphorous-doped silicon dioxide film and a silicon dioxide film not doped with phosphorous, and the total thickness of said double-layered silicon dioxide film is not more than 2 μm.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-06-28 | 2002-12-28 | 2003-06-29 | $2000.00 | Window Closed / Lapsed |
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