US5907762A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing
Assignee: Sharp Corp
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Filing: 1997-12-04
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Granted: 1999-05-25
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Expires: 2017-12-04
Abstract
Abstract A method of constructing a single-transistor ferroelectric memory (FEM) cell includes: preparing a silicon substrate for construction of a FEM gate unit; forming gate, source and drain regions on the silicon substrate; forming a nitride layer over the structure to a predetermined thickness equal to a specified thickness for a bottom electrode of the FEM gate unit; forming a first insulating layer over the structure; chemically-mechanically polishing the first insulating layer such that the top surface thereof is even with the top of the nitride layer; forming the bottom electrode for the FEM cell; and chemically-mechanically polishing the bottom electrode such that the top surface thereof is even with the top surface of the first insulating layer. Additional layers are formed and polished, depending on the specific final configuration of the FEM cell.
Inventors
- 👤 David R. Evans
- 👤 Sheng Teng Hsu
- 👤 Jong Jan Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:09
CPC Classifications
H; H10; H10B; H10B53/00; H10D; H10D30/00; H10D30/01; H10D30/021; H10B51/00; H10D30/60; H10D30/701; H10P; H10P14/00; H10P14/40; H10P14/416; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10P95/066
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
214 words
A method of constructing a single-transistor ferroelectric memory (FEM) cell comprising: preparing a silicon substrate for construction of a FEM gate unit; forming a gate SiO 2 layer on the substrate thereby forming a gate region; forming a polysilicon layer over the gate SiO 2 layer; doping the polysilicon layer to a desire polarity; etching the polysilicon layer to form a gate electrode; forming a SiO 2 gate sidewall; implanting ions in the silicon substrate to form a source region and a drain region; diffusing the implanted ions in the silicon substrate to form the source region and the drain region; forming a nitride layer over the structure resulting from the previous step to a thickness equal to a specified thickness for a bottom FEM cell electrode of the FEM gate unit; forming a first SiO 2 insulating layer over the structure resulting from the previous step; chemically-mechanically polishing the first SiO 2 insulating layer such that a top surface thereof is even with a top surface of the nitride layer; masking and etching the nitride layer over the gate region; forming a bottom electrode for the FEM cell; and chemically-mechanically polishing the bottom electrode such that a top surface thereof is even with the top surface of the first SiO 2 insulating layer.
Claim 2
Independent Claim
214 words
A method of constructing a single-transistor ferroelectric memory (FEM) cell comprising: preparing a silicon substrate for construction of a FEM gate unit; forming a gate SiO 2 layer on the substrate thereby forming a gate region; forming a polysilicon layer over the gate SiO 2 layer; doping the polysilicon layer to a desire polarity; etching the polysilicon layer to form a gate electrode; forming a SiO 2 gate sidewall; implanting ions in the silicon substrate to form a source region and a drain region; diffusing the implanted ions in the silicon substrate to form the source region and the drain region; forming a nitride layer over the structure resulting from the previous step to a thickness equal to a specified thickness for a bottom FEM cell electrode of the FEM gate unit; forming a first SiO 2 insulating layer over the structure resulting from the previous step; chemically-mechanically polishing the first SiO 2 insulating layer such that a top surface thereof is even with a top surface of the nitride layer; masking and etching the nitride layer over the gate region; forming a bottom electrode for the FEM cell; and chemically-mechanically polishing the bottom electrode such that a top surface thereof is even with the top surface of the first SiO 2 insulating layer.
Claim 3
Dependent Claim
101 words
The method of claim 1 which further includes forming a FE layer across the top of the structure resulting from the previous step; forming a top electrode over the FE layer; etching the top electrode to within lateral margins of the gate region; forming a second SiO 2 insulating layer over the structure resulting from the previous step; tapping the structure resulting from the previous step to form bores for a source electrode, a gate electrode and a drain electrode; and metallizing the structure resulting from the previous step to form the source electrode, the gate electrode and the drain electrode.
Claim 4
Dependent Claim
122 words
The method of claim 1 which further includes depositing an interdiffusion barrier over the first SiO 2 insulating layer; etching the interdiffusion barrier to expose the bottom FEM cell electrode; forming a FE layer; forming a top electrode over the FE layer; chemically mechanically polishing the top electrode such that a top surface thereof is even with a top surface of the FE layer; forming a second SiO 2 insulating layer over the structure resulting from the previous step; tapping the structure resulting from the previous step to form bores for a source electrode, a gate electrode and a drain electrode; and metallizing the structure resulting from the previous step to form the source electrode, the gate electrode and the drain electrode.
Claim 5
Dependent Claim
126 words
The method of claim 1 which further includes depositing an interdiffusion barrier over the first SiO 2 insulating layer; etching the interdiffusion barrier to expose the bottom FEM cell electrode; forming a FE layer; forming a top electrode over the FE layer; chemically mechanically polishing the top electrode and the FE layer such that a top surface thereof is even with a top surface of the interdiffusion barrier; forming a second SiO 2 insulating layer over the structure resulting from the previous step; tapping the structure resulting from the previous step to form bores for a source electrode, a gate electrode and a drain electrode; and metallizing the structure resulting from the previous step to form the source electrode, the gate electrode and the drain electrode.
Claim 6
Independent Claim
131 words
A method of constructing a single-transistor ferroelectric memory (FEM) cell comprising: preparing a silicon substrate for construction of a FEM gate unit; forming gate, source and drain regions on the silicon substrate; forming a nitride layer over the structure resulting from the previous step to a thickness equal to a specified thickness for a bottom FEM cell electrode of the FEM gate unit; forming a first insulating layer over the structure resulting from the previous step; chemically-mechanically polishing the first insulating layer such that a top surface thereof is even with a top surface of the nitride layer; forming the bottom FEM cell electrode for the FEM cell; and chemically-mechanically polishing the bottom electrode such that the top surface thereof is even with the top surface of the first insulating layer.
Claim 7
Independent Claim
131 words
A method of constructing a single-transistor ferroelectric memory (FEM) cell comprising: preparing a silicon substrate for construction of a FEM gate unit; forming gate, source and drain regions on the silicon substrate; forming a nitride layer over the structure resulting from the previous step to a thickness equal to a specified thickness for a bottom FEM cell electrode of the FEM gate unit; forming a first insulating layer over the structure resulting from the previous step; chemically-mechanically polishing the first insulating layer such that a top surface thereof is even with a top surface of the nitride layer; forming the bottom FEM cell electrode for the FEM cell; and chemically-mechanically polishing the bottom electrode such that the top surface thereof is even with the top surface of the first insulating layer.
Claim 8
Dependent Claim
87 words
The method of claim 5 which further includes forming a FE layer across the top of the structure resulting from the previous step; forming a top electrode over the FE layer; forming a second insulating layer over the structure resulting from the previous step; tapping the structure resulting from the previous step to form bores for a source electrode, a gate electrode and a drain electrode; and metallizing the structure resulting from the previous step to form the source electrode, the gate electrode and the drain electrode.
Claim 9
Dependent Claim
118 words
The method of claim 5 which further includes depositing an interdiffusion barrier over the first insulating layer; etching the interdiffusion barrier to expose the bottom FEM cell electrode; forming a FE layer; forming a top electrode over the FE layer; chemically mechanically polishing the top electrode such that a top surface thereof is even with the a surface of the FE layer; forming a second insulating layer over the structure resulting from the previous step; tapping the structure resulting from the previous step to form bores for a source electrode, a gate electrode and a drain electrode; and metallizing the structure resulting from the previous step to form the source electrode, the gate electrode and the drain electrode.
Claim 10
Dependent Claim
122 words
The method of claim 5 which further includes depositing an interdiffusion barrier over the first insulating layer; etching the interdiffusion barrier to expose the bottom FEM cell electrode; forming a FE layer; forming a top electrode over the FE layer; chemically mechanically polishing the top electrode and the FE layer such that a top surface thereof is even with a top surface of the interdiffusion barrier; forming a second insulating layer over the structure resulting from the previous step; tapping the structure resulting from the previous step to form bores for a source electrode, a gate electrode and a drain electrode; and metallizing the structure resulting from the previous step to form the source electrode, the gate electrode and the drain electrode.
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