Method of manufacturing an ILD layer by plasma treatment before applying SOG

Claim 1

A method of manufacturing a semiconductor device comprising the steps of: forming a first interlayer insulating layer on a silicon substrate; forming a lower metal layer on said first interlayer insulating layer; forming a first insulating layer using a plasma chemical vapor deposition method on said first interlayer insulating layer including said lower metal layer; removing moisture contained in said first insulating layer by plasma which is generated by applying any one of a N 2 gas and N 2 O gas with a flow rate of 0.5 to 5 SLM and simultaneously applying RF power having a high frequency of 13.56 MHZ and a low frequency of 400 to 500 MHZ at 1 to 3 Torr at a temperature between 300 and 450 degrees Celsius; sequentially forming a SOG layer and a second insulating layer; and forming an upper metal layer on said second insulating layer.

Claim 2

A method of manufacturing a semiconductor device comprising the steps of: forming a first interlayer insulating layer on a silicon substrate; forming a lower metal layer on said first interlayer insulating layer; forming a first insulating layer using a plasma chemical vapor deposition method on said first interlayer insulating layer including said lower metal layer; removing moisture contained in said first insulating layer by plasma which is generated by applying any one of a N 2 gas and N 2 O gas with a flow rate of 0.5 to 5 SLM and simultaneously applying RF power having a high frequency of 13.56 MHZ and a low frequency of 400 to 500 MHZ at 1 to 3 Torr at a temperature between 300 and 450 degrees Celsius; sequentially forming a SOG layer and a second insulating layer; and forming an upper metal layer on said second insulating layer.