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US5898982A Expired / Lapsed US ⏱️ 0.0 years remaining

Thin film capacitors

Assignee: VRAM Technologies LLC
•
Filing: 1997-05-30
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Granted: 1999-05-04
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Expires: 2017-05-30
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Abstract

Abstract The present invention comprises capacitors, and methods of manufacturing the same, having a plurality of vertical plates formed on a substrate in a manner so as to have a high capacitance in a small space and to have good time and temperature stability. Vertical plates are initially formed as sidewall electrode depositions to pedestals formed on a substrate, and through a series of processing steps, additional vertical plates are formed so that multiple capacitor plate--dielectric--capacitor plate combinations are formed around each of the initial vertical plates. Exemplary embodiments and methods of fabrication are disclosed.

Inventors

  • 👤 Richard A. Metzler
  • 👤 Vladimir Rodov

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 07:07
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 103 words
A method of forming capacitors comprising the steps of: (a) providing a conductive layer; (b) forming an array of pedestals on the conductive layer after forming a dielectric layer on the container layer; (c) forming first sidewall conductors on the pedestals electrically insulated from the conductive layer of step (a); (d) removing the pedestals formed in step (b), leaving sidewalls at outer sides of the pedestals; (e) forming an insulative layer on the sidewalls of the first sidewall conductors; and, (f) providing a conductive layer over the device fabricated in steps (a) though (e) and in electrical contact with the first sidewall conductors.
Claim 2
Independent Claim 103 words
A method of forming capacitors comprising the steps of: (a) providing a conductive layer; (b) forming an array of pedestals on the conductive layer after forming a dielectric layer on the container layer; (c) forming first sidewall conductors on the pedestals electrically insulated from the conductive layer of step (a); (d) removing the pedestals formed in step (b), leaving sidewalls at outer sides of the pedestals; (e) forming an insulative layer on the sidewalls of the first sidewall conductors; and, (f) providing a conductive layer over the device fabricated in steps (a) though (e) and in electrical contact with the first sidewall conductors.
Claim 3
Dependent Claim 35 words
The method of claim 1 wherein the pedestals are pedestals having a width, length and height, the ratio of the height to the width of the pedestals being not more than approximately 10 to 1.
Claim 4
Dependent Claim 13 words
The method of claim 1 wherein the conductive layer is a TiN layer.
Claim 5
Dependent Claim 15 words
The method of claim 1 wherein the conductive layer and the sidewall conductors are TiN.
Claim 6
Dependent Claim 13 words
The method of claim 4 wherein the insulative layer is SiO 2 .
Claim 7
Dependent Claim 13 words
The method of claim 1 wherein the insulative layer is SiO 2 .
Claim 8
Independent Claim 143 words
A method of forming capacitors comprising the steps of: (a) providing a conductive layer; (b) forming an array of pedestals on the conductive layer after forming a dielectric layer on the container layer; (c) forming first sidewall conductors on the pedestals electrically insulated from the conductive layer of step (a); (d) removing the pedestals formed in step (b), leaving sidewalls at outer sides of the pedestals; (e) forming an insulative layer on the sidewalls of the first sidewall conductors; (f) forming second sidewall conductors on the sidewalls of the insulative layer formed in step (e), the second sidewall conductors being in electrical contact with the conductive layer of step (a); (g) forming insulative layers over the second sidewall conductors; and (h) providing a conductive layer over the device fabricated in steps (a) though (g) and in electrical contact with the first sidewall conductors.
Claim 9
Independent Claim 143 words
A method of forming capacitors comprising the steps of: (a) providing a conductive layer; (b) forming an array of pedestals on the conductive layer after forming a dielectric layer on the container layer; (c) forming first sidewall conductors on the pedestals electrically insulated from the conductive layer of step (a); (d) removing the pedestals formed in step (b), leaving sidewalls at outer sides of the pedestals; (e) forming an insulative layer on the sidewalls of the first sidewall conductors; (f) forming second sidewall conductors on the sidewalls of the insulative layer formed in step (e), the second sidewall conductors being in electrical contact with the conductive layer of step (a); (g) forming insulative layers over the second sidewall conductors; and (h) providing a conductive layer over the device fabricated in steps (a) though (g) and in electrical contact with the first sidewall conductors.
Claim 10
Dependent Claim 35 words
The method of claim 7 wherein the pedestals are pedestals having a width, length and height, the ratio of the height to the width of the pedestals being not more than approximately 10 to 1.
Claim 11
Dependent Claim 13 words
The method of claim 7 wherein the conductive layer is a TIN layer.
Claim 12
Dependent Claim 15 words
The method of claim 7 wherein the conductive layer and the sidewall conductors are TIN.
Claim 13
Dependent Claim 13 words
The method of claim 10 wherein the insulative layers are SiO 2 .
Claim 14
Dependent Claim 13 words
The method of claim 7 wherein the insulative layers are SiO 2 .

References Cited (Backward Citations)

US5126916A Cited
US5573967A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-05-03 2002-11-02 2003-05-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-05-03 2006-11-02 2007-05-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-05-03 2010-11-02 2011-05-04 $7700.00 Window Closed / Lapsed

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