Patent US5897353A successfully refreshed from Google Patents.
US5897353A
Expired / Lapsed
US
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Method of forming dielectric film of semiconductor memory device
Assignee: SK Hynix Inc
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Filing: 1997-11-03
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Granted: 1999-04-27
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Expires: 2017-11-03
Abstract
Abstract A method of forming a stable type of dielectric film of flash EEPROM by preventing forming of unusual type of oxide film. The method of manufacturing dielectric film comprising the steps of: forming a first polysilicon film, a first dielectric film and a second polysilicon film on the active region of a semiconductor substrate sequentially; patterning said second polysilicon film, the first dielectric film and the first polysilicon film in the same size respectively; forming a curved surface on the side wall of the first dielectric film using wet etching technique in order to accelerate the growth of second dielectric film on the side wall of the first polysilicon film during the subsequent oxidation process; and forming the second dielectric film on the exposed surfaces of the patterned first polysilicon film, first dielectric film, and second polysilicon film using thermal oxidation process.
Inventors
- 👤 Moon Hwan Kim
- 👤 Yong Taek Eom
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:15
CPC Classifications
H; H10; H10B; H10B69/00; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/01; H10D64/031; H10D64/035
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
128 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first polysilicon film, a first dielectric film, and a second polysilicon film on the active region of a semiconductor substrate sequentially; patterning the second polysilicon film, the first dielectric film, and first polysilicon film so that the sidewalls are aligned to one another; forming a rounded surface on the side wall of the first dielectric film through the process of wet etching in order to accelerate the growth of a second dielectric film on the side wall of the first polysilicon film in a subsequent thermal oxidation process; forming said second dielectric film on the exposed surfaces of the patterned first polysilicon film, first dielectric film, and second polysilicon film through said thermal oxidation process.
Claim 2
Independent Claim
128 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first polysilicon film, a first dielectric film, and a second polysilicon film on the active region of a semiconductor substrate sequentially; patterning the second polysilicon film, the first dielectric film, and first polysilicon film so that the sidewalls are aligned to one another; forming a rounded surface on the side wall of the first dielectric film through the process of wet etching in order to accelerate the growth of a second dielectric film on the side wall of the first polysilicon film in a subsequent thermal oxidation process; forming said second dielectric film on the exposed surfaces of the patterned first polysilicon film, first dielectric film, and second polysilicon film through said thermal oxidation process.
Claim 3
Dependent Claim
33 words
The method of claim 1, wherein said second dielectric film at the edges of the first polysilicon film is rounded through a thermal oxidation process in order to form the second dielectric film.
Claim 4
Dependent Claim
15 words
The method of claim 1, wherein the first dielectric film is an ONO (oxide/nitride/oxide) film.
Claim 5
Dependent Claim
22 words
The method of claim 3, wherein the rounded surface is formed on the nitride film while wet etching the first dielectric film.
Claim 6
Dependent Claim
16 words
The method of claim 4, wherein a solution of phosphoric acid is used in wet etching.
Claim 7
Dependent Claim
22 words
The method of claim 3, wherein the rounded surface is formed on the oxide film while wet etching the first dielectric film.
Claim 8
Dependent Claim
16 words
The method of claim 6, wherein a BOE (buffered oxide etchant) is used in wet etching.
Claim 9
Dependent Claim
24 words
The method of claim 4, wherein 100-500 Å of the nitride film is removed while wet etching in order to form the rounded surface.
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| 7.5 Years (Year 8) | 2006-04-26 | 2006-10-26 | 2007-04-27 | $3760.00 | Window Closed / Lapsed |
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