Controllable isotropic plasma etching technique for the suppression of stringers in memory cells

Claim 2

In the manufacture of a group of memory cells on an oxide coated top surface such that the cells are arranged in rows and columns with row and column spaces separating the individual cells from one another, each of said cells including an array of different layers on the oxide coated top surface including a first polysilicon film layer and a second polysilicon film layer, a method for preventing the formation of film stringers extending between adjacent cells in a given column during the cells' manufacture, said method comprising the steps of: before forming said second polysilicon film layer, forming said columns; after established said columns, forming said second polysilicon film layer and thereafter selectively etching said columns and between columns to form said rows and thereby form said cells, each of which having cell sidewalls including said first and second polysilicon film layers, wherein said selective etching of said column is performed by an etching plasma consisting essentially of a hydrogen bromide gas and chlorine gas combination having a ratio of greater than about 1:1 and includes etching away segments of said first and second polysilicon layers in a way which prevents the formation of said stringers.

Claim 3

A method as recited in claim 1 wherein said first film layer and said second film layer are both etched with said etching plasma.

Claim 4

A method according to claim 1 further comprising the step of achieving the temperature of said etching substrate between approximately 80° C. and 11O° C.

Claim 5

A method according to claim 1 wherein said memory cells are EPROMs.

Claim 6

In the manufacture of a group of memory cells on an oxide coated top surface that the cells are arranged in rows and columns with row and column spaces separating the individual cells from one another, each of said cells including an array of different layers on the oxide coated top surface of said substrate including a first and a second polysilicon film layer, a method for preventing the formation of film stringers extending between adjacent cells in any given column during the cells' manufacture, said method comprising the steps of: forming a first part of said array of different layers including said first polysilicon film layer on said oxide coated top surface; forming said columns before said rows are formed; after established said columns, forming a protective oxide layer and a second film polysilicon layer over said oxide coated top surface and said columns; forming rows by selectively etching said columns and between said columns and thereby forming said cells, each of which having cell sidewalls including said first and second polysilicon film layers, wherein said selective etching of said column is performed by an etching plasma and includes etching away segments of said first and second polysilicon film layers in a way which prevents the formation of said stringers; and in applying said etching plasma, controlling the ratio of hydrogen bromide gas flow and chlorine gas flow so as to maintain a ratio of greater than 1:1.

Claim 7

In the manufacture of a group of memory cells on an oxide coated top surface that the cells are arranged in rows and columns with row and column spaces separating the individual cells from one another, each of said cells including an array of different layers on the oxide coated top surface of said substrate including a first and a second polysilicon film layer, a method for preventing the formation of film stringers extending between adjacent cells in any given column during the cells' manufacture, said method comprising the steps of: forming a first part of said array of different layers including said first polysilicon film layer on said oxide coated top surface; forming said columns before said rows are formed; after established said columns, forming a protective oxide layer and a second film polysilicon layer over said oxide coated top surface and said columns; forming rows by selectively etching said columns and between said columns and thereby forming said cells, each of which having cell sidewalls including said first and second polysilicon film layers, wherein said selective etching of said column is performed by an etching plasma and includes etching away segments of said first and second polysilicon film layers in a way which prevents the formation of said stringers; and in applying said etching plasma, controlling the ratio of hydrogen bromide gas flow and chlorine gas flow so as to maintain a ratio of greater than 1:1.

Claim 8

A method as recited in claim 5 wherein said first film layer and second second film layer are both etched with said etching plasma.

Claim 9

A method according to claim 5 further comprising the step of varying said ratio of hydrogen bromide gas and chlorine gas while maintaining said ratio above 1:1.

Claim 10

A method according to claim 5 further comprising the step of maintaining the temperature of said etching plasma between approximately 80° C. and 110° C.