US5891348A — Process gas focusing apparatus and method

Claim 1

Independent Claim 113 words

A method of processing a substrate in a process chamber, the method comprising the steps of: (a) placing a substrate in the process chamber, the substrate having a surface with a center and a peripheral edge; (b) introducing process gas in the process chamber, and maintaining the process gas at process conditions suitable for processing the substrate; and (c) maintaining around the substrate, a wall having (i) a conical surface tapering toward a peripheral edge of the substrate, and (ii) a substantially continuous channel adjacent to, and around the peripheral edge of the substrate surface, the channel having an inlet sized and configured to regulate the flow of process gas into the channel.

Claim 2

Independent Claim 113 words

A method of processing a substrate in a process chamber, the method comprising the steps of: (a) placing a substrate in the process chamber, the substrate having a surface with a center and a peripheral edge; (b) introducing process gas in the process chamber, and maintaining the process gas at process conditions suitable for processing the substrate; and (c) maintaining around the substrate, a wall having (i) a conical surface tapering toward a peripheral edge of the substrate, and (ii) a substantially continuous channel adjacent to, and around the peripheral edge of the substrate surface, the channel having an inlet sized and configured to regulate the flow of process gas into the channel.

Claim 3

Dependent Claim 74 words

The method of claim 1, wherein in step (c), fixed and movable portions of a focus ring are moved relative to one another to define the channel therebetween, the channel comprising an inlet having a width w sized so that during processing of a substrate, the processing rate at the peripheral edge of the substrate surface is from about 90% to about 110% of the processing rate at the center of the substrate surface.

Claim 4

Dependent Claim 70 words

The method of claim 1, wherein in step (b) the process gas in the process chamber is maintained at a pressure of from about 10 mTorr to about 100 mTorr, and wherein in step (c) fixed and movable portions of a focus ring are moved relative to one another to define the channel therebetween, the channel comprising an inlet having a width w of about 1 to about 1000 mils.

Claim 5

Dependent Claim 46 words

The method of claim 1, wherein the process gas in the process chamber is maintained at a pressure of from about 10 mTorr to about 100 mTorr, and wherein in step (c) the length l of the channel is from about 10 to about 100 mm.

Claim 6

Dependent Claim 38 words

The method of claim 1, wherein the substrate comprises a diameter of from about 150 to 300 mm, and wherein in step (c) the wall has a height h of from about 10 mm to about 50 mm.

Claim 7

Dependent Claim 28 words

The method of claim 1, wherein in step (c), the wall of the focus ring comprises a conical surface that tapers toward the peripheral edge of the substrate.

Claim 8

Independent Claim 124 words

A method of processing a substrate in a process chamber, the method comprising the steps of: (a) placing a substrate in the chamber, the substrate having a surface with a center and a peripheral edge; (b) maintaining process gas in the chamber at process conditions suitable for processing the substrate; and (c) maintaining a wall having a substantially continuous channel adjacent to, and around the peripheral edge of the substrate surface, the channel comprising an inlet sized to provide a width w of about 1 to about 1000 μm for a process gas pressure of about 1 to 100 mTorr, whereby the flow of process gas into the channel provides substantially equivalent processing rates at the center and peripheral edge of the substrate surface.

Claim 9

Independent Claim 124 words

A method of processing a substrate in a process chamber, the method comprising the steps of: (a) placing a substrate in the chamber, the substrate having a surface with a center and a peripheral edge; (b) maintaining process gas in the chamber at process conditions suitable for processing the substrate; and (c) maintaining a wall having a substantially continuous channel adjacent to, and around the peripheral edge of the substrate surface, the channel comprising an inlet sized to provide a width w of about 1 to about 1000 μm for a process gas pressure of about 1 to 100 mTorr, whereby the flow of process gas into the channel provides substantially equivalent processing rates at the center and peripheral edge of the substrate surface.

Claim 10

Independent Claim 125 words

A method of processing a substrate in a process chamber, the method comprising the steps of: (a) placing a substrate in the chamber, the substrate having a surface with a center and a peripheral edge; (b) maintaining process gas in the chamber at process conditions suitable for processing the substrate; and (c) maintaining a wall having a substantially continuous channel adjacent to, and around the peripheral edge of the substrate surface, the channel having an inlet sized to provide a length l of from about 10 to about 100 mm for a process gas pressure of about 1 to 100 mTorr, whereby the flow of process gas into the channel provides substantially equivalent processing rates at the center and peripheral edge of the substrate surface.

Claim 11

Independent Claim 125 words

A method of processing a substrate in a process chamber, the method comprising the steps of: (a) placing a substrate in the chamber, the substrate having a surface with a center and a peripheral edge; (b) maintaining process gas in the chamber at process conditions suitable for processing the substrate; and (c) maintaining a wall having a substantially continuous channel adjacent to, and around the peripheral edge of the substrate surface, the channel having an inlet sized to provide a length l of from about 10 to about 100 mm for a process gas pressure of about 1 to 100 mTorr, whereby the flow of process gas into the channel provides substantially equivalent processing rates at the center and peripheral edge of the substrate surface.

Claim 12

Independent Claim 101 words

A method of processing a substrate in a process chamber, the method comprising the steps of: (a) moving movable and fixed portions of a focus ring in the chamber, toward one another, to define (i) a wall surrounding the substrate, and (ii) a substantially continuous channel in the wall; and (b) maintaining process gas in the chamber at process conditions suitable for processing the substrate, whereby the wall contains the process gas around the substrate and the channel allows spent process gas to flow therein to provide substantially equivalent processing rates at the center and peripheral edge of the substrate surface.

Claim 13

Independent Claim 101 words

A method of processing a substrate in a process chamber, the method comprising the steps of: (a) moving movable and fixed portions of a focus ring in the chamber, toward one another, to define (i) a wall surrounding the substrate, and (ii) a substantially continuous channel in the wall; and (b) maintaining process gas in the chamber at process conditions suitable for processing the substrate, whereby the wall contains the process gas around the substrate and the channel allows spent process gas to flow therein to provide substantially equivalent processing rates at the center and peripheral edge of the substrate surface.

Claim 14

Dependent Claim 23 words

The method of claim 9 wherein in step (a), the wall comprises a conical surface tapering toward a peripheral edge of the substrate.

Claim 15

Dependent Claim 41 words

The method of claim 9 wherein in step (a), the channel in the wall is defined between the fixed and movable portions of the focus ring, and extends substantially continuously adjacent to, and around the peripheral edge of the substrate surface.

Claim 16

Dependent Claim 65 words

The method of claim 11 wherein the fixed and movable portions of the focus ring are moved sufficiently close to one another to define a channel having an inlet with a width w sized to process the peripheral edge of the substrate surface at a processing rate that is about 90% to about 110% of a processing rate at the center of the substrate surface.

Claim 17

Dependent Claim 69 words

The method of claim 10 wherein in step (a) the process gas in the process chamber is maintained at a pressure of from about 10 mTorr to about 100 mTorr, and wherein in step (b) the fixed and movable portions of the focus ring are moved toward another to define a channel therebetween, the channel comprising an inlet having a width w of about 1 to about 1000 mils.

Claim 18

Independent Claim 126 words

An apparatus for processing a substrate having a surface with a center and a peripheral edge, the apparatus comprising: (a) a process chamber having a gas distributor for distributing process gas in the process chamber; (b) a support for supporting a substrate in the process chamber; (c) a plasma generator for forming a plasma from the process gas in the process chamber; (d) a focus ring in the process chamber, the focus ring comprising a fixed portion and a movable portion that cooperate to define (i) a wall surrounding the substrate to substantially contain the plasma on the substrate surface, and (ii) a channel in the wall, the channel having an inlet adjacent to, and extending substantially continuously around the peripheral edge of the substrate surface.

Claim 19

Independent Claim 126 words

An apparatus for processing a substrate having a surface with a center and a peripheral edge, the apparatus comprising: (a) a process chamber having a gas distributor for distributing process gas in the process chamber; (b) a support for supporting a substrate in the process chamber; (c) a plasma generator for forming a plasma from the process gas in the process chamber; (d) a focus ring in the process chamber, the focus ring comprising a fixed portion and a movable portion that cooperate to define (i) a wall surrounding the substrate to substantially contain the plasma on the substrate surface, and (ii) a channel in the wall, the channel having an inlet adjacent to, and extending substantially continuously around the peripheral edge of the substrate surface.

Claim 20

Dependent Claim 64 words

The apparatus of claim 14, wherein the inlet comprises a width w sized to allow a sufficient amount of process gas to flow into the channel during processing of the substrate that the peripheral edge of the substrate surface is processed at a processing rate that is from about 90% to about 110% of a processing rate at the center of the substrate surface.

Claim 21

Dependent Claim 42 words

The apparatus of claim 15, wherein the width w of the inlet is sized so that the etch rate at the peripheral edge of the substrate surface is within about 10% of the etch rate at the center of the substrate surface.

Claim 22

Dependent Claim 37 words

The apparatus of claim 15, wherein the width w of the inlet is about 1 to about 1000 mils for a pressure of process gas in the process chamber of about 10 mTorr to about 100 mTorr.

Claim 23

Dependent Claim 49 words

The apparatus of claim 14, wherein the channel comprises a length l sized to allow a sufficient amount of process gas to flow into the channel, during processing of the substrate, that substantially no process gas stagnates to form contaminant particulates at the peripheral edge of the substrate surface.

Claim 24

Dependent Claim 40 words

The apparatus of claim 18, wherein the length l of the channel is from about 10 mm to about 100 mm, for a pressure of process gas in the process chamber of from about 10 mTorr to about 100 mTorr.

Claim 25

Dependent Claim 43 words

The apparatus of claim 14, wherein at least a portion of a sidewall of the inlet of the channel is substantially parallel to the substrate surface to maintain a substantially laminar flow of process gas across the peripheral edge of the substrate surface.

Claim 26

Dependent Claim 33 words

The apparatus of claim 14, wherein the focus ring comprises (i) a fixed portion, and (ii) a movable portion, the channel being formed between the fixed and movable portion of the focus ring.

Claim 27

Dependent Claim 50 words

The apparatus of claim 14, wherein the wall of the focus ring comprises a height h sized sufficiently long to direct the flow of process gas from the gas distributor to the substrate while reducing the flow to the substrate of stagnant process gas species circulating in the process chamber.

Claim 28

Dependent Claim 39 words

The apparatus of claim 14, wherein the substrate comprises a diameter of from about 150 to 300 mm, and wherein the wall of the focus ring comprises a height h of from about 10 mm to about 50 mm.

Claim 29

Dependent Claim 25 words

The apparatus of claim 14, wherein the wall of the focus ring comprises a conical surface that tapers toward the peripheral edge of the substrate.

Claim 30

Dependent Claim 33 words

The apparatus of claim 24, wherein the conical surface of the wall forms an angle of from about 10° to about 75° with an axis substantially vertical to the surface of the substrate.

Claim 31

Dependent Claim 35 words

The apparatus of claim 14, wherein the gas distributor of the process chamber is located above the center of the substrate surface and is capable of distributing process gas substantially uniformly across the substrate surface.

Claim 32

Dependent Claim 127 words

A process chamber for uniformly processing a substrate in a process gas, the process chamber comprising: (a) a gas distributor for introducing process gas in the process chamber; (b) a gas containment wall for directing the flow of process gas introduced through the gas distributor to the substrate, the wall comprising a conical surface that tapers toward the peripheral edge of the substrate; and (c) a movable substrate holder having (i) a first position suitable for loading the substrate thereon, and (ii) a second position for processing of the substrate, wherein in the second position the movable substrate holder and the process gas containment wall define a channel therebetween, the channel having an inlet adjacent to and extending substantially continuously around a peripheral edge of the substrate.

Claim 33

Dependent Claim 127 words

A process chamber for uniformly processing a substrate in a process gas, the process chamber comprising: (a) a gas distributor for introducing process gas in the process chamber; (b) a gas containment wall for directing the flow of process gas introduced through the gas distributor to the substrate, the wall comprising a conical surface that tapers toward the peripheral edge of the substrate; and (c) a movable substrate holder having (i) a first position suitable for loading the substrate thereon, and (ii) a second position for processing of the substrate, wherein in the second position the movable substrate holder and the process gas containment wall define a channel therebetween, the channel having an inlet adjacent to and extending substantially continuously around a peripheral edge of the substrate.

Claim 34

Dependent Claim 36 words

The process chamber of claim 27, wherein the inlet of the channel comprises a width w sized to allow a sufficient volume of process gas to enter into the channel to substantially uniformly process the substrate.

Claim 35

Dependent Claim 40 words

The process chamber of claim 27, wherein the channel comprises a length l sized to allow a sufficient volume of process gas to enter into the channel to reduce formation of particulate contaminants at the peripheral edge of the substrate.

Claim 36

Dependent Claim 29 words

The process chamber of claim 27, wherein at least a portion of a sidewall of the inlet of the channel is substantially parallel to a surface of the substrate.

Claim 37

Dependent Claim 54 words

The process chamber of claim 27, wherein the wall of the focus ring comprises a height h sized sufficiently long for the wall to direct the flow of process gas from the gas distributor to the substrate while reducing the flow to the substrate of stagnant process gas species circulating in the process chamber.

Claim 38

Dependent Claim 45 words

The process chamber of claim 27, wherein the gas contaminant wall comprises a conical surface that tapers toward the peripheral edge of the substrate at an angle of from about 10° to about 75° with an axis substantially vertical to a surface of the substrate.

Claim 39

Dependent Claim 116 words

A process chamber for processing a substrate having a surface with a peripheral edge, the process chamber comprising: (a) a gas distributor for distributing process gas in the process chamber; (b) a plasma generator for forming a plasma from the process gas; (c) a support for supporting a substrate; and (d) a focus ring comprising (i) a wall surrounding the substrate to substantially contain the plasma on the substrate surface, and (ii) a channel having an inlet adjacent to, and extending substantially continuously around the peripheral edge of the substrate surface, the inlet having a width w of about 1 to about 1000 mils for a pressure of process gas of about 10 to 100 mTorr.

Claim 40

Dependent Claim 116 words

A process chamber for processing a substrate having a surface with a peripheral edge, the process chamber comprising: (a) a gas distributor for distributing process gas in the process chamber; (b) a plasma generator for forming a plasma from the process gas; (c) a support for supporting a substrate; and (d) a focus ring comprising (i) a wall surrounding the substrate to substantially contain the plasma on the substrate surface, and (ii) a channel having an inlet adjacent to, and extending substantially continuously around the peripheral edge of the substrate surface, the inlet having a width w of about 1 to about 1000 mils for a pressure of process gas of about 10 to 100 mTorr.

Claim 41

Dependent Claim 39 words

The process chamber of claim 33 wherein the channel comprises a length l of about 10 mm to about 100 mm, for a pressure of process gas in the chamber of from about 10 mTorr to about 100 mTorr.

Claim 42

Dependent Claim 32 words

The process chamber of claim 33 wherein the focus ring comprises a fixed portion and a movable portion, the channel being formed between the fixed and movable portions of the focus ring.

Claim 43

Dependent Claim 26 words

The process chamber of claim 33 wherein the wall of the focus ring comprises a conical surface that tapers toward the peripheral edge of the substrate.

Claim 44

Dependent Claim 34 words

The process chamber of claim 36 wherein the conical surface of the wall forms an angle of from about 10° to about 75° with an axis substantially vertical to the surface of the substrate.

Claim 45

Dependent Claim 125 words

A process chamber for processing a substrate having a surface with a peripheral edge, the process chamber comprising: (a ) a gas distributor for distributing process gas in the process chamber; (b) a plasma generator for forming a plasma from the process gas; (c) a support for supporting a substrate; and (d) a focus ring comprising (i) a wall surrounding the substrate to substantially contain the plasma on the substrate surface, and (ii) a channel in the wall, the channel having an inlet adjacent to, and extending substantially continuously around the peripheral edge of the substrate surface, the channel having a length l of about 10 mm to about 100 mm for a pressure of process gas of about 10 mTorr to about 100 mTorr.

Claim 46

Dependent Claim 125 words

A process chamber for processing a substrate having a surface with a peripheral edge, the process chamber comprising: (a ) a gas distributor for distributing process gas in the process chamber; (b) a plasma generator for forming a plasma from the process gas; (c) a support for supporting a substrate; and (d) a focus ring comprising (i) a wall surrounding the substrate to substantially contain the plasma on the substrate surface, and (ii) a channel in the wall, the channel having an inlet adjacent to, and extending substantially continuously around the peripheral edge of the substrate surface, the channel having a length l of about 10 mm to about 100 mm for a pressure of process gas of about 10 mTorr to about 100 mTorr.

Claim 47

Dependent Claim 34 words

The process chamber of claim 38 wherein the channel comprises a width w of about 1 to about 1000 mils for a pressure of process gas of about 10 mTorr to about 100 mTorr.

Claim 48

Dependent Claim 32 words

The process chamber of claim 38 wherein the focus ring comprises a fixed portion and a movable portion, the channel being formed between the fixed and movable portions of the focus ring.

Claim 49

Dependent Claim 26 words

The process chamber of claim 38 wherein the wall of the focus ring comprises a conical surface that tapers toward the peripheral edge of the substrate.

Claim 50

Dependent Claim 34 words

The process chamber of claim 41 wherein the conical surface of the wall forms an angle of from about 10° to about 75° with an axis substantially vertical to the surface of the substrate.

Claim 51

Dependent Claim 113 words

A process chamber for processing a substrate having a surface with a peripheral edge, the process chamber comprising: (a) a process chamber having a gas distributor for distributing process gas in the process chamber; (c) a plasma generator for forming a plasma from the process gas; (b) a support for supporting a substrate; and (d) a focus ring comprising (i) a wall surrounding the substrate and having a conical surface that tapers towards the peripheral edge of the substrate, and (ii) a channel in the wall, the channel having an inlet adjacent to, and extending substantially continuously around the peripheral edge of the substrate surface, whereby process gas can flow into the channel.

Claim 52

Dependent Claim 113 words

A process chamber for processing a substrate having a surface with a peripheral edge, the process chamber comprising: (a) a process chamber having a gas distributor for distributing process gas in the process chamber; (c) a plasma generator for forming a plasma from the process gas; (b) a support for supporting a substrate; and (d) a focus ring comprising (i) a wall surrounding the substrate and having a conical surface that tapers towards the peripheral edge of the substrate, and (ii) a channel in the wall, the channel having an inlet adjacent to, and extending substantially continuously around the peripheral edge of the substrate surface, whereby process gas can flow into the channel.

Claim 53

Dependent Claim 24 words

The process chamber of claim 43 wherein the substantially the entire surface of the wall facing the substrate consists essentially of the conical surface.

Claim 54

Dependent Claim 34 words

The process chamber of claim 43 wherein the conical surface of the wall forms an angle of from about 10° to about 75° with an axis substantially vertical to the surface of the substrate.

Claim 55

Dependent Claim 35 words

The process chamber of claim 43 wherein the inlet of the channel comprises a width w of about 1 to about 1000 mils for a pressure of process gas of about 10 to 100 mTorr.

Claim 56

Dependent Claim 35 words

The process chamber of claim 43 wherein the channel comprises a length l of about 10 mm to about 100 mm for a pressure of process gas of about 10 mTorr to about 100 mTorr.

Claim 57

Dependent Claim 32 words

The process chamber of claim 43 wherein the focus ring comprises a fixed portion and a movable portion, the channel being formed between the fixed and movable portions of the focus ring.

Claim 58

Dependent Claim 87 words

A process chamber for processing a substrate having a surface with a peripheral edge, the process chamber comprising: (a) a process chamber having a gas distributor for distributing process gas in the process chamber; (c) a plasma generator for forming a plasma from the process gas; (b) a support for supporting a substrate; and (d) a focus ring comprising a wall surrounding the substrate, substantially the entire surface of the wall facing the substrate comprising a conical surface that tapers towards the peripheral edge of the substrate.

Claim 59

Dependent Claim 87 words

A process chamber for processing a substrate having a surface with a peripheral edge, the process chamber comprising: (a) a process chamber having a gas distributor for distributing process gas in the process chamber; (c) a plasma generator for forming a plasma from the process gas; (b) a support for supporting a substrate; and (d) a focus ring comprising a wall surrounding the substrate, substantially the entire surface of the wall facing the substrate comprising a conical surface that tapers towards the peripheral edge of the substrate.

Claim 60

Dependent Claim 34 words

The process chamber of claim 49 wherein the conical surface of the wall forms an angle of from about 10° to about 75° with an axis substantially vertical to the surface of the substrate.

Claim 61

Dependent Claim 29 words

The process chamber of claim 49 wherein the wall comprises a channel having an inlet adjacent to, and extending substantially continuously around the peripheral edge of the substrate surface.

Claim 62

Dependent Claim 35 words

The process chamber of claim 51 wherein the inlet of the channel comprises a width w of about 1 to about 1000 mils for a pressure of process gas of about 10 to 100 mTorr.

Claim 63

Dependent Claim 35 words

The process chamber of claim 51 wherein the channel comprises a length l of about 10 mm to about 100 mm for a pressure of process gas of about 10 mTorr to about 100 mTorr.

Claim 64

Dependent Claim 32 words

The process chamber of claim 49 wherein the focus ring comprises a fixed portion and a movable portion, the channel being formed between the fixed and movable portions of the focus ring.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2002-04-05	2002-10-05	2003-04-06	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2006-04-05	2006-10-05	2007-04-06	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2010-04-05	2010-10-05	2011-04-06	$7700.00	Window Closed / Lapsed

Process gas focusing apparatus and method

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