US5246532A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing apparatus
Assignee: Mitsubishi Electric Corp
•
Filing: 1992-12-10
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Granted: 1993-09-21
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Expires: 2012-12-10
Abstract
Abstract In a plasma processing method and a plasma processing apparatus, a substrate is processed in a plasma with a surrounding focus ring levitated by the repulsion between a magnet mounted in the focus ring and an electromagnet. The height of the focus ring relative to the substrate support is adjusted to an optimal height by adjusting the current flowing to the electromagnet. Therefore, it is possible to achieve an optimal height of the focus ring for the etching of each layer in a laminated film to enhance the uniformity of laminated film etching and to achieve precise etching.
Inventors
- 👤 Tomoaki Ishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:50
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/3266; H01J37/32697; Y; Y10; Y10S; Y10S156/00; Y10S156/915
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
82 words
A plasma processing apparatus comprising: a processing container having a reactive gas inlet and a reactive gas outlet; a high-frequency electrode disposed in said processing container for supporting a substrate; a high-frequency power supply connected to said high-frequency electrode; magnetic field generating means for generating a magnetic field in said processing container; and a focus ring for surrounding the substrate and having a magnet therein for levitation above the high-frequency electrode by a magnetic field generated by said magnetic field generating means.
Claim 2
Dependent Claim
82 words
A plasma processing apparatus comprising: a processing container having a reactive gas inlet and a reactive gas outlet; a high-frequency electrode disposed in said processing container for supporting a substrate; a high-frequency power supply connected to said high-frequency electrode; magnetic field generating means for generating a magnetic field in said processing container; and a focus ring for surrounding the substrate and having a magnet therein for levitation above the high-frequency electrode by a magnetic field generated by said magnetic field generating means.
Claim 3
Dependent Claim
17 words
A plasma processing apparatus according to claim 1 wherein said magnetic field generating means is an electromagnet.
Claim 4
Dependent Claim
17 words
A plasma processing apparatus according to claim 2 wherein said electromagnet is embedded in said high-frequency electrode.
Claim 5
Dependent Claim
27 words
A plasma processing apparatus according to claim 2 wherein said container includes side walls and said electromagnet is disposed at a side wall of said processing container.
Claim 6
Dependent Claim
17 words
A plasma processing apparatus according to claim 2 wherein said electromagnet is disposed outside said processing container.
Claim 7
Dependent Claim
18 words
A plasma processing apparatus according to claim 1 wherein said magnet in said focus ring is an electromagnet.
Claim 8
Dependent Claim
19 words
A plasma processing apparatus according to claim 1 wherein said magnet in said focus ring is a permanent magnet.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-20 | 1997-03-22 | 1997-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-20 | 2001-03-22 | 2001-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-20 | 2005-03-22 | 2005-09-21 | $7700.00 | Window Closed / Lapsed |