US5552124A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stationary focus ring for plasma reactor
Assignee: Applied Materials Inc
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Filing: 1994-06-22
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Granted: 1996-09-03
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Expires: 2014-06-22
Abstract
Abstract A stationary focus ring for use in a plasma reactor during wafer processing includes a first slotted opening through which a wafer transfer blade and wafer may pass, and includes a second slotted opening, where the two openings cooperate to provide a balanced gas flow distribution across the wafer surface, such that process uniformity is achieved across the wafer surface, while minimizing the actual size of the openings to provide an increased level of reaction commensurate with that of a solid, movable focus ring. Alternatively, a thick focus ring that displaces chamber volume and thereby stabilizes gas flow within the chamber has a circular, an eccentric, and/or a baffle configuration to provide uniform gas flow distribution across the wafer surface.
Inventors
- 👤 Yin-Jia Su
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:38
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/455; C23C16/45587; C23C16/45591; H01J37/32642; H01J37/32798; H01J37/32816; H01J37/32834; Y; Y10; Y10S; Y10S156/00; Y10S156/915
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
114 words
A focus ring for a plasma reactor for processing a semiconductor wafer, said focus ring surrounding the periphery of the wafer, said focus ring comprising: an upper ring portion; a lower ring portion; and at least one link joining said upper and lower ring portions such that said upper and lower ring portions and said link define a first slotted opening adapted to receive a wafer transfer blade and a wafer and a second slotted opening; said first and second slotted openings being adapted to cooperate to exhaust process gas across the wafer surface, such that gas flow distribution across the wafer surface is balanced, while contaminating particles are swept from the wafer edges.
Claim 2
Dependent Claim
114 words
A focus ring for a plasma reactor for processing a semiconductor wafer, said focus ring surrounding the periphery of the wafer, said focus ring comprising: an upper ring portion; a lower ring portion; and at least one link joining said upper and lower ring portions such that said upper and lower ring portions and said link define a first slotted opening adapted to receive a wafer transfer blade and a wafer and a second slotted opening; said first and second slotted openings being adapted to cooperate to exhaust process gas across the wafer surface, such that gas flow distribution across the wafer surface is balanced, while contaminating particles are swept from the wafer edges.
Claim 3
Dependent Claim
31 words
The focus ring of claim 1, wherein said first slotted opening is aligned with a reactor slit valve, such that said focus ring remains stationary during wafer loading, unloading, and processing.
Claim 4
Dependent Claim
14 words
The focus ring of claim 1, wherein said focus ring is a unitary structure.
Claim 5
Dependent Claim
38 words
The focus ring of claim 1, wherein said focus ring is a compound structure comprising: an upper focus ring portion; a lower focus ring portion; and a link adapted to join said first and said second ring portions.
Claim 6
Dependent Claim
36 words
The focus ring of claim 4, wherein said link further comprises: a tab that projects vertically from one ring portion; and a slot formed within the other ring portion that is adapted to receive said tab.
Claim 7
Dependent Claim
43 words
The focus ring of claim 4, wherein said link further comprises: aligned journals formed within each of said first and second ring portions; and a pin adapted to be set within said aligned journals to join said first and said second ring portions.
Claim 8
Dependent Claim
30 words
The focus ring of claim 4, wherein said first ring portion comprises an upper ring portion, and wherein said upper ring portion defines at least one selected focus ring configuration.
Claim 9
Dependent Claim
28 words
The focus ring f claim 7, wherein said upper ring portion further comprises a plurality of interchangeable upper rings that define a plurality of selected focus ring configurations.
Claim 10
Dependent Claim
21 words
The focus ring of claim 4, wherein said first ring portion and said second ring portion are made of different materials.
Claim 11
Dependent Claim
45 words
The focus ring of claim 9, wherein said first ring portion comprises an upper ring portion made from a material selected from the group including, ceramics, and quartz; and wherein said second ring portion comprises a lower ring portion made from a process insensitive material.
Claim 12
Dependent Claim
19 words
The focus ring of claim 1, wherein said first and said second slotted openings are not the same size.
Claim 13
Dependent Claim
31 words
The focus ring of claim 1, wherein said first and second slotted openings have a lower opening edge that is formed above the wafer surface to define a process gas barrier.
Claim 14
Dependent Claim
20 words
The focus ring of claim 1, wherein said focus ring has a ring thickness that is greater than 2 mm.
Claim 15
Dependent Claim
28 words
The focus ring of claim 14, wherein said focus ring has a ring thickness sufficient to extend an outer ring surface up to a reactor inner wall surface.
Claim 16
Dependent Claim
21 words
The focus ring of claim 14, wherein said focus ring has apertures formed therethrough and in communication with an exhaust plenum.
Claim 17
Dependent Claim
16 words
The focus ring of claim 13, wherein said focus ring has an eccentric outer ring surface.
Claim 18
Dependent Claim
130 words
A stationary, compound focus ring for a plasma reactor for processing a semiconductor wafer, said focus ring surrounding the periphery of the wafer, said focus ring comprising: an upper ring portion; a lower ring portion; and at least one link joining said upper and lower ring portions such that said upper and lower ring portions and said link define a first slotted opening aligned with a reactor slit valve and adapted to receive a wafer transfer blade and a wafer, and a second slotted opening adapted to exhaust process gas across the wafer surface, wherein said first and second slotted openings have a lower opening edge that is formed above the wafer surface to define a process gas barrier; whereby uniform gas flow distribution is maintained across the wafer surface.
Claim 19
Dependent Claim
130 words
A stationary, compound focus ring for a plasma reactor for processing a semiconductor wafer, said focus ring surrounding the periphery of the wafer, said focus ring comprising: an upper ring portion; a lower ring portion; and at least one link joining said upper and lower ring portions such that said upper and lower ring portions and said link define a first slotted opening aligned with a reactor slit valve and adapted to receive a wafer transfer blade and a wafer, and a second slotted opening adapted to exhaust process gas across the wafer surface, wherein said first and second slotted openings have a lower opening edge that is formed above the wafer surface to define a process gas barrier; whereby uniform gas flow distribution is maintained across the wafer surface.
Claim 20
Dependent Claim
20 words
The focus ring of claim 17, wherein said focus ring has a ring thickness that is greater than 2 mm.
Claim 21
Dependent Claim
92 words
In a plasma reactor for processing a semiconductor wafer, a process for maintaining uniform gas flow distribution across the wafer surface, comprising the steps of: receiving a wafer transfer blade and a wafer through a first slotted opening formed in a fixed focus ring that is aligned with a reactor slit valve; and exhausting process gas across the wafer surface through a second slotted opening formed in said focus ring; wherein said first and said second slotted focus ring openings cooperate to provide uniform process gas flow distribution across the wafer surface.
Claim 22
Dependent Claim
92 words
In a plasma reactor for processing a semiconductor wafer, a process for maintaining uniform gas flow distribution across the wafer surface, comprising the steps of: receiving a wafer transfer blade and a wafer through a first slotted opening formed in a fixed focus ring that is aligned with a reactor slit valve; and exhausting process gas across the wafer surface through a second slotted opening formed in said focus ring; wherein said first and said second slotted focus ring openings cooperate to provide uniform process gas flow distribution across the wafer surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-03 | 2000-03-04 | 2000-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-03 | 2004-03-04 | 2004-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-03 | 2008-03-04 | 2008-09-03 | $7700.00 | Window Closed / Lapsed |