US5405491A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma etching process
Assignee: Motorola Solutions Inc
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Filing: 1994-03-04
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Granted: 1995-04-11
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Expires: 2014-03-04
Abstract
Abstract A process for fabricating a semiconductor device is enhanced by providing a plasma etching process in which exposed metal surfaces within a plasma etching chamber (24) are protected by a ceramic layer (46). In the plasma etching process, a substrate (10) is placed on a platen (26) located within a plasma etching apparatus (22). A clamping device (40) secures the perimeter of the substrate (10) to the platen (26). The clamping device (40) includes a ceramic layer (46) overlying a metal base (44). When a plasma is ignited within the etching chamber (24), the ceramic layer (46) prevents physical contact of the plasma and the metal base (44) of the clamping device (40).
Inventors
- 👤 Iraj E. Shahvandi
- 👤 Carol Gelatos
- 👤 Leroy Grant, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:13
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/32559
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
75 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate; positioning the substrate on a platen located within a plasma etching apparatus; positioning a clamping device to secure the perimeter of the substrate to the platen, wherein the clamping device includes a ceramic layer overlying a metal base; and igniting a plasma within the etching apparatus, wherein the ceramic layer prevents physical contact of the plasma and the metal base.
Claim 2
Dependent Claim
75 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate; positioning the substrate on a platen located within a plasma etching apparatus; positioning a clamping device to secure the perimeter of the substrate to the platen, wherein the clamping device includes a ceramic layer overlying a metal base; and igniting a plasma within the etching apparatus, wherein the ceramic layer prevents physical contact of the plasma and the metal base.
Claim 3
Dependent Claim
42 words
The process of claim 1, wherein the step of igniting a plasma comprises flowing reactive gases into the etching apparatus, wherein the reactive gases are selected from the group consisting of fluorine, fluorinated hydrocarbon, sulfur hexafluoride, chlorine, chlorinated hydrocarbon, and hydrogen chloride.
Claim 4
Dependent Claim
22 words
The process of claim 1, wherein the substrate supports a metal layer, and wherein the metal layer is etched by the plasma.
Claim 5
Dependent Claim
36 words
The process of claim 3, wherein the metal layer is selected from the group consisting of a refractory metal, a refractory metal nitride, a refractory metal silicide, aluminum, copper, and an alloy of aluminum and copper.
Claim 6
Dependent Claim
44 words
The process of claim 1, wherein the step of positioning a clamping device comprises contacting the metal base to a side portion and a top portion of the substrate, such that a charge conduction path is provided between the substrate and the metal base.
Claim 7
Dependent Claim
108 words
A process for fabricating a semiconductor device comprising the steps of: providing a plasma etching apparatus; providing a semiconductor substrate having a metal layer thereon; positioning the substrate on a platen within the etching apparatus; engaging a clamping device to secure the substrate to the platen, wherein the clamping device includes a ceramic layer overlying an aluminum base, and a ceramic focus ring overlying a portion of the aluminum base and a portion of the ceramic layer; flowing etching gas into the etching apparatus; and igniting a plasma to etch the refractory-metal layer, wherein the ceramic layer prevents the reaction of the etching gas with the aluminum base.
Claim 8
Dependent Claim
108 words
A process for fabricating a semiconductor device comprising the steps of: providing a plasma etching apparatus; providing a semiconductor substrate having a metal layer thereon; positioning the substrate on a platen within the etching apparatus; engaging a clamping device to secure the substrate to the platen, wherein the clamping device includes a ceramic layer overlying an aluminum base, and a ceramic focus ring overlying a portion of the aluminum base and a portion of the ceramic layer; flowing etching gas into the etching apparatus; and igniting a plasma to etch the refractory-metal layer, wherein the ceramic layer prevents the reaction of the etching gas with the aluminum base.
Claim 9
Dependent Claim
61 words
The process of claim 6, wherein the step of providing a substrate having a metal layer comprises providing a refractory metal layer overlying a refractory-metal nitride layer, and wherein the process further comprises flowing fluorinated etching gas into the etching apparatus to etch the refractory-metal layer, and flowing chlorinated etching gas into the etching apparatus to etch the refractory-metal nitride layer.
Claim 10
Dependent Claim
44 words
The process of claim 6, wherein the step of engaging a clamping device comprises contacting the aluminum base to a side portion and a top portion of the substrate, such that a charge conduction path is provided between the substrate and the aluminum base.
Claim 11
Dependent Claim
129 words
A process for fabricating a semiconductor device comprising the steps of: providing a substrate having metallized contact structure, the structure including, a dielectric layer having an opening therein, a metal interlayer overlying the dielectric layer, and a metal-via layer overlying the metal interlayer and filling the opening; positioning the substrate on a platen located within a plasma etching apparatus; engaging a clamping device to secure the perimeter of the substrate to the platen, wherein the clamping device includes a ceramic layer overlying a metal base; flowing fluorinated etching gas into the etching apparatus to etch the metal-via layer; and flowing chlorinated etching gas into the etching apparatus to etch the metal interlayer, wherein the ceramic layer prevents reaction of the fluorinated and chlorinated etching gases with the metal base.
Claim 12
Dependent Claim
129 words
A process for fabricating a semiconductor device comprising the steps of: providing a substrate having metallized contact structure, the structure including, a dielectric layer having an opening therein, a metal interlayer overlying the dielectric layer, and a metal-via layer overlying the metal interlayer and filling the opening; positioning the substrate on a platen located within a plasma etching apparatus; engaging a clamping device to secure the perimeter of the substrate to the platen, wherein the clamping device includes a ceramic layer overlying a metal base; flowing fluorinated etching gas into the etching apparatus to etch the metal-via layer; and flowing chlorinated etching gas into the etching apparatus to etch the metal interlayer, wherein the ceramic layer prevents reaction of the fluorinated and chlorinated etching gases with the metal base.
Claim 13
Dependent Claim
53 words
The process of claim 9, wherein the step of flowing fluorinated etching gas comprises flowing a gas selected from the group consisting of fluorine, fluorinated hydrocarbon, sulfur hexafluoride, and wherein the step of flowing chlorinated etching gas comprises flowing a gas selected from the group consisting of chlorine, chlorinated hydrocarbon, and hydrogen chloride.
Claim 14
Dependent Claim
44 words
The process of claim 9, wherein the step of engaging a clamping device comprises contacting the metal base to a side portion and a top portion of the substrate, such that a charge conduction path is provided between the substrate and the metal base.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-10 | 1998-10-10 | 1999-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-10 | 2002-10-10 | 2003-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-10 | 2006-10-10 | 2007-04-11 | $7700.00 | Window Closed / Lapsed |