Multilayer floating gate field effect transistor structure for use in integrated circuit devices

Claim 2

A flash memory integrated circuit, comprising: a first semiconductor-on-insulator layer including a first insulating layer above a first conductive layer above a first semiconductor substrate above a first floating gate above a first control gate above a second insulating layer, the first semiconductor substrate containing a first channel region situated above the first floating gate; and a second semiconductor-on-insulator layer including a third insulating layer above a second conductive layer above a second semiconductor substrate above a second floating gate, above a second control gate above a fourth insulating layer, the second semiconductor substrate containing a second channel region situated above the second floating gate, the fourth insulating layer being in contact with the first insulating layer, wherein the first semiconductor substrate is stacked below the second semiconductor substrate.

Claim 3

The integrated circuit of claim 1 wherein the first control gate is disposed over three sides of the first floating gate.

Claim 4

The integrated circuit of claim 2 wherein the first control gate is coupled to the second control gate by an interlayer via extending through the first semiconductor substrate.

Claim 5

The integrated circuit of claim 1 wherein the fourth insulating layer and the first insulating layer are bonded by an adhesive.

Claim 6

The integrated circuit of claim 3 wherein the first conductive layer is a silicide layer and the interlayer via is coupled to the silicide layer.

Claim 7

The integrated circuit of claim 5 wherein the first substrate is coupled to a substrate via to receive a substrate bias signal.

Claim 8

The integrated circuit of claim 3 wherein the interlayer via is separated from the first channel region by a doped region isolating the interlayer via from the first channel region.

Claim 9

A multilayer structure for containing a plurality of floating gate transistors, the multilayer structure comprising: a first layer including a first insulative layer above a first conductive layer above a first semiconductor substrate above a first floating gate above a first control gate above a second insulative layer, the first semiconductor substrate being at least partially surrounded on three sides by the first control gate; and a second layer including a third insulative layer above a second conductive layer, above a second semiconductor substrate, above a second floating gate above a second control gate above a fourth insulative layer, the second semiconductor substrate containing a second channel region, the second semiconductor substrate being at least partially surrounded on three sides by the second control gate, wherein the first semiconductor substrate is stacked below the second semiconductor substrate and the first insulative layer is bonded to the fourth insulative layer.

Claim 10

A multilayer structure for containing a plurality of floating gate transistors, the multilayer structure comprising: a first layer including a first insulative layer above a first conductive layer above a first semiconductor substrate above a first floating gate above a first control gate above a second insulative layer, the first semiconductor substrate being at least partially surrounded on three sides by the first control gate; and a second layer including a third insulative layer above a second conductive layer, above a second semiconductor substrate, above a second floating gate above a second control gate above a fourth insulative layer, the second semiconductor substrate containing a second channel region, the second semiconductor substrate being at least partially surrounded on three sides by the second control gate, wherein the first semiconductor substrate is stacked below the second semiconductor substrate and the first insulative layer is bonded to the fourth insulative layer.

Claim 11

The multilayer structure of claim 8 wherein a conductive via is disposed through the second layer into the first layer, the conductive via being electrically coupled to the first substrate and the second substrate.

Claim 12

The multilayer structure of claim 9 wherein the conductive via is disposed through the second substrate.

Claim 13

The multilayer structure of claim 10 wherein the first control gate and the second control gate are coupled by a control via, the control via extending at least partially through the first layer and the second layer.

Claim 14

The multilayer structure of claim 8 wherein the first layer and the second layer are bonded by an adhesive.

Claim 15

The multilayer structure of claim 11 wherein the first control gate is a silicide material.

Claim 16

The multilayer structure of claim 12 wherein the first floating gate is a polysilicon material.

Claim 17

The multilayer structure of claim 13 wherein the first floating gate and the first control gate are separated by a dielectric layer, the dielectric layer being an oxide-nitride-oxide material.

Claim 18

A multilayer structure for containing a plurality of floating gate transistors, the multilayer structure being fabricated by a method comprising: providing a first layer including a first insulative layer above a first conductive layer, above a first semiconductor substrate, above a first floating gate, above a first control gate, above a second insulative layer, the first semiconductor substrate containing a first channel region situated adjacent the first floating gate, the first semiconductor substrate being at least partially surrounded by the first control gate, the first control gate being electrically coupled to a first via; providing a second layer including a third insulative layer above a second conductive layer, above a second semiconductor substrate, above a second floating gate, above a second control gate, above a fourth insulative layer, the second semiconductor substrate containing a second channel region situated adjacent the second floating gate, the second semiconductor substrate being at least partially surrounded by the second control gate, the second control gate being electrically coupled to a second via; attaching the first layer to the second layer; and electrically coupling the first via to the second via.

Claim 19

A multilayer structure for containing a plurality of floating gate transistors, the multilayer structure being fabricated by a method comprising: providing a first layer including a first insulative layer above a first conductive layer, above a first semiconductor substrate, above a first floating gate, above a first control gate, above a second insulative layer, the first semiconductor substrate containing a first channel region situated adjacent the first floating gate, the first semiconductor substrate being at least partially surrounded by the first control gate, the first control gate being electrically coupled to a first via; providing a second layer including a third insulative layer above a second conductive layer, above a second semiconductor substrate, above a second floating gate, above a second control gate, above a fourth insulative layer, the second semiconductor substrate containing a second channel region situated adjacent the second floating gate, the second semiconductor substrate being at least partially surrounded by the second control gate, the second control gate being electrically coupled to a second via; attaching the first layer to the second layer; and electrically coupling the first via to the second via.

Claim 20

The multilayer structure of claim 16 wherein the first layer includes a first support substrate and the second layer includes a second support substrate, wherein the second support substrate is attached to the second layer by a temporary bond and the second support substrate is removed prior to the attaching step.

Claim 21

The multilayer structure of claim 16 wherein the first via is coupled to a first suicide layer and the second via is coupled to a second silicide layer.

Claim 22

The multilayer structure of claim 18 wherein the method further comprises: providing an interlevel conductive via, the interlevel conductive via being coupled to the first silicide layer and the second silicide layer.

Claim 23

The multilayer structure of claim 16 wherein the method further comprises: depositing an insulating layer over the second layer; and providing a metal layer over the insulating layer.