Abstract A method for making a semiconductor device having a silicon-on-insulator structure comprises the steps of: forming a pad oxide on a wafer which has a lower silicon substrate, a buried oxide layer and an upper silicon layer, forming an oxynitride region on a predetermined portion of the buried oxide layer; forming an active silicon layer to intersect the oxynitride region, and forming a cavity by wet-etching the exposed oxynitride region; forming a gate insulating layer on the surface of the exposed active silicon layer; forming a polysilicon to fill the cavity surrounding said active silicon layer and removing a predetermined portion of the doped polysilicon to form a gate electrode; and forming source and drain regions on the active silicon layer separated by the gate electrode.
A method for making a semiconductor device having a silicon-on-insulator, gate-all-around structure comprising the steps of: forming a pad oxide on a wafer which includes a lower silicon substrate, a buried insulator layer, and an upper silicon layer; forming an oxynitride region on a portion of said buried insulator layer; forming an active silicon layer to intersect said oxynitride region; forming a cavity by wet-etching said exposed oxynitride region; forming a gate insulating layer on the surface of the exposed active silicon layer; depositing polysilicon to fill said cavity surrounding said active silicon layer; removing a portion of said polysilicon to form a gate electrode; and forming source and drain regions on said active silicon layer separated by said gate electrode.
Claim 2
Independent Claim
121 words
A method for making a semiconductor device having a silicon-on-insulator, gate-all-around structure comprising the steps of: forming a pad oxide on a wafer which includes a lower silicon substrate, a buried insulator layer, and an upper silicon layer; forming an oxynitride region on a portion of said buried insulator layer; forming an active silicon layer to intersect said oxynitride region; forming a cavity by wet-etching said exposed oxynitride region; forming a gate insulating layer on the surface of the exposed active silicon layer; depositing polysilicon to fill said cavity surrounding said active silicon layer; removing a portion of said polysilicon to form a gate electrode; and forming source and drain regions on said active silicon layer separated by said gate electrode.
Claim 3
Dependent Claim
15 words
The method according to claim 1, wherein said oxynitride region is formed by nitrogen ion-implantation.
Claim 4
Dependent Claim
15 words
The method of claim 1, wherein said buried insulator layer is a buried oxide layer.
Claim 5
Dependent Claim
15 words
The method of claim 1, wherein said buried insulator layer is a buried nitride layer.