Process for metallization of an insulation layer

Claim 2

A process for making metal features in a planarized insulator layer, comprising the steps of: (a) providing a planarized insulator layer on a substrate wherein, said substrate includes a conducting layer parallel to and underlying the top surface of said substrate and parallel to said planarized insulator layer; (b) depositing, on said planarized insulator layer, a first layer of a material that attenuates reflected radiation; (c) depositing a photoresist on said layer of material that attenuates reflected radiation; (d) exposing and developing said photoresist layer; (e) etching both of said planarized insulator layer and said layer of material that attenuates reflected radiation, to form a plurality of apertures or channels; (f) removing said photoresist layer; (g) depositing a layer of titanium, titanium nitride, or a bilayer of the two over at least a portion of the first layer of material, and in at least a portion of said apertures or channels; (h) depositing a metal over at least a portion of the layer of titanium, titanium nitride, or the bilayer of the two, and in at least a portion of said apertures or channels; and (i) removing by etchback planarization, from the top surface of the planarized insulator layer, all of the metal, all of the first layer of material that attenuates reflected radiation, and all of the layer of titanium, titanium nitride or bilayer of the two which reside over the planarized insulator layer, to create a pattern of metallization in the apertures or channels.

Claim 3

A process according to claim 1 wherein said apertures or channels extend through said insulator layer and into said substrate.

Claim 4

A process according to claim 1 wherein said layer of material that attenuates reflected radiation comprises tantalum and said metal is copper.

Claim 5

A process according to claim 1 wherein said layer of material that attenuates reflected radiation comprises titanium and said metal is aluminum.

Claim 6

A process according to claim 1 wherein said layer of material that attenuates reflected radiation comprises titanium nitride and said metal is tungsten.

Claim 7

A process according to claim 1 comprising the additional steps, following (f) and preceding (g), of depositing a second photoresist on said layer of material that attenuates reflected radiation; exposing and developing said second photoresist layer; and etching both of said insulator layer and said layer of material that attenuates reflected radiation.

Claim 8

A process for making metal features in a planarized insulator layer, comprising the steps of: (a) providing a planarized insulator layer on a substrate, wherein said substrate includes a conducting layer parallel to and underlying the top surface of said substrate and parallel to said planarized insulator layer; (b) depositing a first layer of titanium nitride on said planarized insulator layer; (c) patterning both of said planarized insulator and said titanium nitride layers with a plurality of apertures or channels; (d) depositing a second layer of titanium, titanium nitride, or a bilayer of the two over at least a portion of the first layer of titanium nitride, and in at least a portion of said apertures or channels; (e) depositing a metal over at least a portion of the second layer, and in at least a portion of said apertures or channels; and (f) removing by etchback planarization, from the top surface of the planarized insulator layer, all of the metal, all of the first layer of titanium nitride, and all of the second layer of titanium, titanium nitride or bilayer of the two which reside over the planarized insulator, to create a pattern of metallization in the apertures or channels.

Claim 9

A process for making metal features in a planarized insulator layer, comprising the steps of: (a) providing a planarized insulator layer on a substrate, wherein said substrate includes a conducting layer parallel to and underlying the top surface of said substrate and parallel to said planarized insulator layer; (b) depositing a first layer of titanium nitride on said planarized insulator layer; (c) patterning both of said planarized insulator and said titanium nitride layers with a plurality of apertures or channels; (d) depositing a second layer of titanium, titanium nitride, or a bilayer of the two over at least a portion of the first layer of titanium nitride, and in at least a portion of said apertures or channels; (e) depositing a metal over at least a portion of the second layer, and in at least a portion of said apertures or channels; and (f) removing by etchback planarization, from the top surface of the planarized insulator layer, all of the metal, all of the first layer of titanium nitride, and all of the second layer of titanium, titanium nitride or bilayer of the two which reside over the planarized insulator, to create a pattern of metallization in the apertures or channels.

Claim 10

The method of claim 7, wherein step (d) is carried out to improve the adhesion between the insulator layer and the metal deposited in step (e).

Claim 11

A process according to claim 7 wherein said apertures or channels extend through said insulator layer and into said substrate.

Claim 12

A process according to claim 7 wherein said patterning of said insulator and titanium nitride layers is carried out by depositing, exposing and developing a photoresist on said titanium nitride layer; etching both of said insulator and titanium nitride layers; and removing said photoresist.

Claim 13

A process according to claim 7 wherein said metal is chosen from the group consisting of tungsten, copper, aluminum, and molybdenum.

Claim 14

A process for making metal features in a planarized insulator layer, comprising the steps of: (a) providing a planarized insulator layer on a substrate, wherein said substrate includes a conducting saver parallel to and underlying the top surface of said substrate and parallel to said planarized insulator layer; (b) depositing, on said planarized insulator layer, a first layer of a material that attenuates reflected radiation and improves metal adhesion; (c) depositing a photoresist on said first layer of material that attenuates reflected radiation and improves metal adhesion; (d) exposing and developing said photoresist layer; (e) etching both of said planarized insulator layer and said first layer of material that attenuates reflected radiation and improves metal adhesion, to form a plurality of apertures or channels; (f) removing said photoresist layer; (g) depositing a second layer of said material that attenuates reflected radiation and improves metal adhesion over at least a portion of the first layer of said material, and in at least a portion of said apertures or channels, wherein said material of said second layer is the same as that of said first layer; (h) depositing a metal over at least a portion of the second layer of material and in at least a portion of said apertures or channels; (i) removing by etchback planarization from the top surface of the planarized insulator layer, all of the metal and all of the first and second layers of material that attenuate reflected radiation and improve metal adhesion, which reside over the planarized insulator layer, to create a pattern of metallization in the apertures or channels.

Claim 15

A process for making metal features in a planarized insulator layer, comprising the steps of: (a) providing a planarized insulator layer on a substrate, wherein said substrate includes a conducting saver parallel to and underlying the top surface of said substrate and parallel to said planarized insulator layer; (b) depositing, on said planarized insulator layer, a first layer of a material that attenuates reflected radiation and improves metal adhesion; (c) depositing a photoresist on said first layer of material that attenuates reflected radiation and improves metal adhesion; (d) exposing and developing said photoresist layer; (e) etching both of said planarized insulator layer and said first layer of material that attenuates reflected radiation and improves metal adhesion, to form a plurality of apertures or channels; (f) removing said photoresist layer; (g) depositing a second layer of said material that attenuates reflected radiation and improves metal adhesion over at least a portion of the first layer of said material, and in at least a portion of said apertures or channels, wherein said material of said second layer is the same as that of said first layer; (h) depositing a metal over at least a portion of the second layer of material and in at least a portion of said apertures or channels; (i) removing by etchback planarization from the top surface of the planarized insulator layer, all of the metal and all of the first and second layers of material that attenuate reflected radiation and improve metal adhesion, which reside over the planarized insulator layer, to create a pattern of metallization in the apertures or channels.

Claim 16

A process according to claim 12, wherein said material that attenuates reflected radiation and improves metal adhesion is titanium, titanium nitride, or tantalum, and wherein said metal is aluminum when said material is titanium, said metal is tungsten when said material is titanium nitride, and said metal is copper when said material is tantalum.

Claim 17

A process according to claim 12 wherein said apertures or channels extend through said insulator layer and into said substrate.

Claim 18

A process according to claim 12 comprising the additional steps, following (f) and preceding (g), of depositing a second photoresist on said first layer of material that attenuates reflected radiation and improves metal adhesion; exposing and developing said second photoresist layer; and etching both of said insulator layer and said first layer of material that attenuates reflected radiation and improves metal adhesion.