US5152869A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for obtaining passive thin-layer circuits with resistive lines having different layer resistances and passive circuit made by said process
Assignee: Siemens Telecomunicazioni SpA
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Filing: 1990-12-11
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Granted: 1992-10-06
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Expires: 2010-12-11
Abstract
Abstract A process on a single insulating substrate for depositing in succession a thin layer of tantalium with high resistivity doped with nitrogen and oxygen, a less thin layer of titanium with low resistivity doped with nitrogen, a layer of palladium and a thick layer of gold. Selective chemical attacks of said layers then permit tracing of conducting lines, resistive lines with greater resistance and resistive lines with less resistance.
Inventors
- 👤 Giampiero Ferraris
- 👤 Antonio Tersalvi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:12
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D86/00; H10D86/01; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
204 words
A process for obtaining passive thin-layer circuits with resistive lines having a proper layout and a different layer resistance formed by the steps of: laying a first high resistivity layer made of tantalum treated with a first dopant of nitrogen and oxygen on an insulator substrate; superimposing a second low resistivity layer made of titanium treated with a second dopant of nitrogen to said first layer; superimposing to said second layer a third layer made of palladium having barrier function against diffusion of titanium to said second layer; superimposing to said third layer a fourth layer made of high conductivity metal to form conducting lines on said third layer; removing said first, second, third and fourth layer outside the layout of said resistive lines having different resistance; such that the resistive lines having high resistivity are obtained by the substep of a first selective removal of said fourth, third and second layer effected in correspondence with the layout of said resistive lines having high resistivity; and such that the resistive lines having low resistivity are obtained by the further substep of a second selective removal of said fourth and third layer effected in correspondence with the layout of said resistive lines having low resistivity.
Claim 2
Dependent Claim
204 words
A process for obtaining passive thin-layer circuits with resistive lines having a proper layout and a different layer resistance formed by the steps of: laying a first high resistivity layer made of tantalum treated with a first dopant of nitrogen and oxygen on an insulator substrate; superimposing a second low resistivity layer made of titanium treated with a second dopant of nitrogen to said first layer; superimposing to said second layer a third layer made of palladium having barrier function against diffusion of titanium to said second layer; superimposing to said third layer a fourth layer made of high conductivity metal to form conducting lines on said third layer; removing said first, second, third and fourth layer outside the layout of said resistive lines having different resistance; such that the resistive lines having high resistivity are obtained by the substep of a first selective removal of said fourth, third and second layer effected in correspondence with the layout of said resistive lines having high resistivity; and such that the resistive lines having low resistivity are obtained by the further substep of a second selective removal of said fourth and third layer effected in correspondence with the layout of said resistive lines having low resistivity.
Claim 3
Dependent Claim
21 words
A process in accordance with claim 1 wherein said first, second and third layer are obtained by cathodic pulverization in vacuum.
Claim 4
Dependent Claim
24 words
A process in accordance with claim 1 wherein the removing of said layers is by means of a respective resist deposit and photomasking process.
Claim 5
Dependent Claim
26 words
A process in accordance with claim 1 wherein said first and second selective removals are obtained by means of a respective first and second chemical etching.
Claim 6
Dependent Claim
21 words
A process in accordance with claim 2 wherein said first, second and third layers are superimposed in a same vacuum cycle.
Claim 7
Dependent Claim
14 words
A process in accordance with claim 2 wherein said high conductivity metal is gold.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-10-06 | 1996-04-06 | 1996-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-06 | 2000-04-06 | 2000-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-06 | 2004-04-06 | 2004-10-06 | $7700.00 | Window Closed / Lapsed |