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US5152869A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for obtaining passive thin-layer circuits with resistive lines having different layer resistances and passive circuit made by said process

Assignee: Siemens Telecomunicazioni SpA
•
Filing: 1990-12-11
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Granted: 1992-10-06
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Expires: 2010-12-11
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Abstract

Abstract A process on a single insulating substrate for depositing in succession a thin layer of tantalium with high resistivity doped with nitrogen and oxygen, a less thin layer of titanium with low resistivity doped with nitrogen, a layer of palladium and a thick layer of gold. Selective chemical attacks of said layers then permit tracing of conducting lines, resistive lines with greater resistance and resistive lines with less resistance.

Inventors

  • 👤 Giampiero Ferraris
  • 👤 Antonio Tersalvi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 20:12
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D86/00; H10D86/01; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 204 words
A process for obtaining passive thin-layer circuits with resistive lines having a proper layout and a different layer resistance formed by the steps of: laying a first high resistivity layer made of tantalum treated with a first dopant of nitrogen and oxygen on an insulator substrate; superimposing a second low resistivity layer made of titanium treated with a second dopant of nitrogen to said first layer; superimposing to said second layer a third layer made of palladium having barrier function against diffusion of titanium to said second layer; superimposing to said third layer a fourth layer made of high conductivity metal to form conducting lines on said third layer; removing said first, second, third and fourth layer outside the layout of said resistive lines having different resistance; such that the resistive lines having high resistivity are obtained by the substep of a first selective removal of said fourth, third and second layer effected in correspondence with the layout of said resistive lines having high resistivity; and such that the resistive lines having low resistivity are obtained by the further substep of a second selective removal of said fourth and third layer effected in correspondence with the layout of said resistive lines having low resistivity.
Claim 2
Dependent Claim 204 words
A process for obtaining passive thin-layer circuits with resistive lines having a proper layout and a different layer resistance formed by the steps of: laying a first high resistivity layer made of tantalum treated with a first dopant of nitrogen and oxygen on an insulator substrate; superimposing a second low resistivity layer made of titanium treated with a second dopant of nitrogen to said first layer; superimposing to said second layer a third layer made of palladium having barrier function against diffusion of titanium to said second layer; superimposing to said third layer a fourth layer made of high conductivity metal to form conducting lines on said third layer; removing said first, second, third and fourth layer outside the layout of said resistive lines having different resistance; such that the resistive lines having high resistivity are obtained by the substep of a first selective removal of said fourth, third and second layer effected in correspondence with the layout of said resistive lines having high resistivity; and such that the resistive lines having low resistivity are obtained by the further substep of a second selective removal of said fourth and third layer effected in correspondence with the layout of said resistive lines having low resistivity.
Claim 3
Dependent Claim 21 words
A process in accordance with claim 1 wherein said first, second and third layer are obtained by cathodic pulverization in vacuum.
Claim 4
Dependent Claim 24 words
A process in accordance with claim 1 wherein the removing of said layers is by means of a respective resist deposit and photomasking process.
Claim 5
Dependent Claim 26 words
A process in accordance with claim 1 wherein said first and second selective removals are obtained by means of a respective first and second chemical etching.
Claim 6
Dependent Claim 21 words
A process in accordance with claim 2 wherein said first, second and third layers are superimposed in a same vacuum cycle.
Claim 7
Dependent Claim 14 words
A process in accordance with claim 2 wherein said high conductivity metal is gold.

References Cited (Backward Citations)

US3423821A Cited
US4112196A Cited
US4226932A Cited
US4743953A Cited
DE3200983A1 Cited
EP0256568A2 Cited
US4801469A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-10-06 1996-04-06 1996-10-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-10-06 2000-04-06 2000-10-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-10-06 2004-04-06 2004-10-06 $7700.00 Window Closed / Lapsed

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