US4226932A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Titanium nitride as one layer of a multi-layered coating intended to be etched
Assignee: GTE Automatic Electric Laboratories Inc
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Filing: 1979-07-05
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Granted: 1980-10-07
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Expires: 1999-07-05
Abstract
Abstract A multilayered thin film structure comprising layers of resistive and conductive materials on a substrate, said layers including tantalum nitride, palladium and gold. A layer of titanium nitride, is used between the tantalum nitride and palladium layers to act as an adhesive layer, to prevent undercutting during etching, and to allow all metal depositing to be performed during one step.
Inventors
- 👤 Giampiero Ferraris
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:24
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/80; H10D86/85; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/931; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12542; Y10T428/12549; Y10T428/12576; Y10T428/12771; Y10T428/12861; Y10T428/12875; Y10T428/12889
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
82 words
A multilayered thin film structure for use in hybrid integrated circuits comprising: substrate means providing a base for said structure; resistive means located on said substrate means; an adhesive layer of titanium nitride located on said resistive means; thermal diffusion barrier means located on said titanium nitride means; conductive means located on said thermal diffusion barrier means; said thermal diffusion barrier means functioning to prevent the diffusion of titanium included in said titanium nitride, to said conductive means in response to heat.
Claim 2
Dependent Claim
82 words
A multilayered thin film structure for use in hybrid integrated circuits comprising: substrate means providing a base for said structure; resistive means located on said substrate means; an adhesive layer of titanium nitride located on said resistive means; thermal diffusion barrier means located on said titanium nitride means; conductive means located on said thermal diffusion barrier means; said thermal diffusion barrier means functioning to prevent the diffusion of titanium included in said titanium nitride, to said conductive means in response to heat.
Claim 3
Dependent Claim
17 words
A multilayered thin film structure as claimed in claim 1, wherein: said resistive means comprise tantalum nitride.
Claim 4
Dependent Claim
18 words
A multilayered thin film structure as claimed in claim 1, wherein: said thermal diffusion barrier means comprise palladium.
Claim 5
Dependent Claim
16 words
A multilayered thin film structure as claimed in claim 1, wherein: said conductive means comprise gold.
Claim 6
Independent Claim
107 words
A method of making a multilayered thin film structure for use in hybrid integrated circuits, said method comprising: a first step of placing a substrate in a vacuum station; a second step of depositing on said substrate a layer of tantalum nitride, by means of sequential sputtering deposition; a third step of depositing a layer of titanium on said layer of tantalum nitride and doping the titanium layer with nitrogen during sputtering to obtain a layer of titanium nitride; a fourth step of depositing on said titanium nitride layer, a layer of palladium; and a fifth step of depositing on said palladium layer, a layer of gold.
Claim 7
Independent Claim
107 words
A method of making a multilayered thin film structure for use in hybrid integrated circuits, said method comprising: a first step of placing a substrate in a vacuum station; a second step of depositing on said substrate a layer of tantalum nitride, by means of sequential sputtering deposition; a third step of depositing a layer of titanium on said layer of tantalum nitride and doping the titanium layer with nitrogen during sputtering to obtain a layer of titanium nitride; a fourth step of depositing on said titanium nitride layer, a layer of palladium; and a fifth step of depositing on said palladium layer, a layer of gold.
Claim 8
Dependent Claim
66 words
A method of making a multilayered thin film structure as claimed in claim 5, wherein there is further included: a sixth step comprising withdrawal of said coated substrate from said vacuum station; and a seventh step comprising photolithographing said coated substrate by means of a first selective chemical etching of said gold, palladium, titanium nitride and tantalum nitride layers so as to obtain a conductive circuit.
Claim 9
Dependent Claim
48 words
A method of making a multilayered thin film structure as claimed in claim 6, wherein there is further included: an eighth step comprising photolithographing said coated substrate by means of a second selective chemical etching of said gold, palladium and titanium nitride layers to obtain a resistive circuit.
Claim 10
Dependent Claim
46 words
A method of making a multilayered thin film structure as claimed in claim 6, wherein: said nitrogen doping is calibrated so as to control the rate of said first etching of said titanium nitride by said chemical etchants used in said photolithographing of said coated substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-10-07 | 1984-04-07 | 1984-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-10-07 | 1988-04-07 | 1988-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-10-07 | 1992-04-07 | 1992-10-07 | $7700.00 | Window Closed / Lapsed |