EP0525942A2
Expired / Lapsed
EP
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Integrated circuit fabrication process using a bilayer resist
Assignee: AT&T Inc
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Filing: 1992-05-20
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Granted: —
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Expires: 2012-05-20
Abstract
Abstract A lithographic process for integrated circuit processing uses a two-level resist to reduce variations in nominally identical feature sizes as printed in the resist(e.g. 7) and as transferred into the substrate(e.g. 1), resulting from complex topography on the substrate surface.
Inventors
- 👤 John David Cuthbert
- 👤 Chong-Cheng Fu
- 👤 Kolawole Rahman Olasupo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 20:32
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10W; H10W20/00; H10W20/01; H10W20/071
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
96 words
A method for fabricating semiconductor integrated circuits comprising the steps of: fabricating a substrate(e.g. 1) having features(e.g. 3); covering said substrate(e.g. 1) and features(e.g. 3) with a planarizing ARC layer(e.g. 5) comprising a material which is highly absorbing of the radiation used in a subsequent step; coating said planarizing ARC layer(e.g. 5) with a resist(e.g. 7); exposing selected portions of said resist(e.g. 7) to radiation, thereby creating at least two features(e.g. 9,11) in said resist(e.g. 7); and anisotropically etching said resist(e.g. 7) and said planarizing ARC layer(e.g. 5) to reveal selected portions of said substrate(e.g. 1).
Claim 2
Dependent Claim
20 words
A method as recited in claim 1 in which said planarizing ARC(e.g. 5) and said resist(e.g. 7) do not mix.
Claim 3
Dependent Claim
17 words
A method as recited in claim 1 in which said etching is in a plasma comprising oxygen.
Claim 4
Dependent Claim
16 words
A method as recited in claim 1 in which said resist(e.g 7) comprises a high-contrast resist.
Claim 5
Dependent Claim
40 words
A method as recited in claim 1 in which said anisotropic etching step removes said resist(e.g. 7) and said antireflection coating(e.g. 5) at approximately the same rate in the direction perpendicular to the horizontal plane of the substrate (e.g. 1).
Claim 6
Dependent Claim
18 words
A method as recited in claim 3 in which said plasma further comprises pattern transfer delta controlling additive.
Claim 7
Dependent Claim
25 words
A method as recited in claim 6 in which said additive comprises at least one member selected from the group consisting of HBr and CHF₃.
Claim 8
Dependent Claim
17 words
A method as recited in claim 6 in which said plasma further comprises an inert carrier gas.
References Cited (Backward Citations)
No citation records indexed.
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