US5882468A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thickness control of semiconductor device layers in reactive ion etch processes
Assignee: International Business Machines Corp
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Filing: 1997-02-24
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Granted: 1999-03-16
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Expires: 2017-02-24
Abstract
Abstract By moving a substrate relative to a shadow mask in a reactive ion etching system, we are able to precisely tailor the thickness of critical layers. To minimize disturbing the plasma, all the mechanical components are kept below the anode. The system is highly reproducible, and can be programmed to yield arbitrary vertical profiles along one horizontal axis. Using silicon-on-insulator substrates, the resonance wavelength was modified as a function of position with better than 1 nm control in the vertical dimension. This technique should prove useful for optical devices where the thickness of the layers controls the device characteristics.
Inventors
- 👤 John G. Crockett
- 👤 Bardia Pezeshki
- 👤 Robert L. Sandstrom
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:38
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
73 words
An apparatus for forming predetermined profiles in semiconductor devices comprising: a. a spring-loaded translatable substrate mechanism for holding a substrate, said substrate mechanism being situated beneath a mask piece, said mask piece having an aperture therein; b. means for translating said substrate mechanism back and forth beneath said aperture; said mask piece and said mechanism being a part of the anode of a reactive ion etching device and being situated within a chamber.
Claim 2
Independent Claim
73 words
An apparatus for forming predetermined profiles in semiconductor devices comprising: a. a spring-loaded translatable substrate mechanism for holding a substrate, said substrate mechanism being situated beneath a mask piece, said mask piece having an aperture therein; b. means for translating said substrate mechanism back and forth beneath said aperture; said mask piece and said mechanism being a part of the anode of a reactive ion etching device and being situated within a chamber.
Claim 3
Dependent Claim
23 words
The apparatus of claim 1 further including means for moving said substrate mechanism in a direction perpendicular to said back and forth direction.
Claim 4
Dependent Claim
32 words
The apparatus of claim 1 wherein said means for translating includes a stepper motor connected to said translating means through a rotary feedthrough through a hole in a wall of said chamber.
Claim 5
Dependent Claim
19 words
The apparatus of claim 3 wherein said stepper motor is controlled by means of a program in a computer.
Claim 6
Dependent Claim
18 words
The apparatus of claim 4 wherein said program provides for incremental movement of said substrate beneath said aperture.
Claim 7
Dependent Claim
18 words
The apparatus of claim 4 wherein said program provides for continuous movement of said substrate beneath said aperture.
Claim 8
Dependent Claim
19 words
The apparatus of claim 4 wherein said program provides for time varied movement of said substrate beneath said aperture.
Claim 9
Dependent Claim
22 words
The apparatus of claim 1 wherein said mask and said translatable mechanism are at least partially located beneath a dark space shield.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-15 | 2002-09-14 | 2003-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-15 | 2006-09-14 | 2007-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-15 | 2010-09-14 | 2011-03-16 | $7700.00 | Window Closed / Lapsed |