Abstract A plasma reaction device having a cylindrical reaction chamber connectable to a gas source for receiving internally thereof a working gas for treating workpieces, such as semiconductor wafers, therein with the working gas. An exterior electrode is mounted exteriorly of and about the working chamber and an interior electrode is disposed in the reaction chamber spaced inwardly from the inner surfaces thereof. A high frequency voltage source is connected across the two electrodes for applying a high frequency voltage to the electrodes to excite the working gas and develop a plasma in a space between the electrodes. The interior electrode has a plurality of plasma-diffusion through-holes arranged and dimensioned to effectively obtain a substantially uniform concentration of the plasma on a surface of the workpiece exposed to the interior of the reaction chamber and therefore exposed to the working gap plasma. The plasma-diffusion through-holes are arranged and dimensioned so that an opening-to-surface ratio of the interior electrode in a portion thereof close to the workpiece surface being treated is relatively small. The interior electrode is constructed so that this ratio is relatively large on a portion of the interior electrode more remote from the surface of the workpiece being treated. The ratio is computed by dividing the total cross section area of the through-holes by the remainder of the total surface area of the interior electrode less the total cross section area of the through-holes in terms of a unit area of the interior electrode.
A plasma reaction device for treating semiconductor workpieces comprising; means defining a cylindrical rection chamber connectable to a working gas supply source of a gas for treating semiconductor workpieces therein; a cylindrical exterior electrode disposed circumferentially of said reaction chamber externally thereof; a cylindrical interior electrode disposed interiorly of said reaction chamber spaced inwardly from inner surfaces thereof; a workpiece stage disposed within said interior electrode for supporting a workpiece for treatment interiorly of said interior electrode; a high frequency power source connected across said electrodes for applying thereto a high frequency voltage effective to excite the working gas in said reaction chamber to develop a plasma between the electrodes; said interior electrode having a plurality of plasma-diffusion through-holes distributed and dimensioned to effectively obtain a substantially uniform plasma concentration on a surface of said workpiece being treated and exposed to the interior of said reaction chamber; the plasma-diffusion through-holes being arranged and dimensioned so that an opening-to-surface ratio of said interior electrode at a portion close to said workpiece is relatively small and is relatively large on a portion of the interior electrode more remote from said surface of the workpiece, whereby the concentration of plasma on said surface of the workpiece is substantially uniform throughout the surface of the workpiece; and said ratio being obtained by dividing the total cross section area of the through-holes by the remainder of the total surface area of the interior electrode less the total area of the through-holes in terms of a unit area of the interior electrode.
Claim 2
Dependent Claim
256 words
A plasma reaction device for treating semiconductor workpieces comprising; means defining a cylindrical rection chamber connectable to a working gas supply source of a gas for treating semiconductor workpieces therein; a cylindrical exterior electrode disposed circumferentially of said reaction chamber externally thereof; a cylindrical interior electrode disposed interiorly of said reaction chamber spaced inwardly from inner surfaces thereof; a workpiece stage disposed within said interior electrode for supporting a workpiece for treatment interiorly of said interior electrode; a high frequency power source connected across said electrodes for applying thereto a high frequency voltage effective to excite the working gas in said reaction chamber to develop a plasma between the electrodes; said interior electrode having a plurality of plasma-diffusion through-holes distributed and dimensioned to effectively obtain a substantially uniform plasma concentration on a surface of said workpiece being treated and exposed to the interior of said reaction chamber; the plasma-diffusion through-holes being arranged and dimensioned so that an opening-to-surface ratio of said interior electrode at a portion close to said workpiece is relatively small and is relatively large on a portion of the interior electrode more remote from said surface of the workpiece, whereby the concentration of plasma on said surface of the workpiece is substantially uniform throughout the surface of the workpiece; and said ratio being obtained by dividing the total cross section area of the through-holes by the remainder of the total surface area of the interior electrode less the total area of the through-holes in terms of a unit area of the interior electrode.
Claim 3
Dependent Claim
29 words
A plasma reaction device according to claim 1, in which the opening-to-surface ratio of said interior electrode at the portion close to said surface of the workpiece is zero.
Claim 4
Dependent Claim
20 words
A plasma reaction device according to claim 1 or 2, in which said plasma-diffusion through-holes have a rectangular cross section.
Claim 5
Dependent Claim
20 words
A plasma reaction device according to claim 1 or 2, in which said plasma-diffusion through-holes have a circular cross section.
Claim 6
Dependent Claim
19 words
A plasma reaction device according to claim 1 or 2, in which said interior electrode comprises a net structure.
Claim 7
Dependent Claim
37 words
A plasma reaction device as claimed in claim 1 or 2, in which said workpiece to be treated is a workpiece to be etched, and in which said working gas is a gas for etching said workpiece.