Patent US5882410A successfully refreshed from Google Patents.
US5882410A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
Assignee: Mitsubishi Electric Corp
•
Filing: 1998-07-15
•
Granted: 1999-03-16
•
Expires: 2018-07-15
Abstract
Abstract There is provided a (Ba, Sr) TiO3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM)2/THF, Sr(DPM)2/THF and TiO(DPM)2/THF solutions which are used as source material solutions. A (Ba, Sr) TiO3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.
Inventors
- 👤 Takaaki Kawahara
- 👤 Mikio Yamamuka
- 👤 Tetsuro Makita
- 👤 Tsuyoshi Horikawa
- 👤 Akimasa Yuuki
- 👤 Teruo Shibano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:36
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; C23C16/44; C23C16/448; C23C16/4481; C23C16/4485; C23C16/52; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
73 words
A high dielectric constant thin film manufacturing apparatus, comprising: a reaction chamber in which a thin film is formed by CVD on a substrate; a source material gas feed pipe for feeding a source material gas to said reaction chamber; an oxygen gas feed pipe for feeding an oxygen gas to said reaction chamber; and an infrared sensor disposed in said oxygen gas feed pipe for detecting a surface temperature of said substrate.
Claim 2
Dependent Claim
73 words
A high dielectric constant thin film manufacturing apparatus, comprising: a reaction chamber in which a thin film is formed by CVD on a substrate; a source material gas feed pipe for feeding a source material gas to said reaction chamber; an oxygen gas feed pipe for feeding an oxygen gas to said reaction chamber; and an infrared sensor disposed in said oxygen gas feed pipe for detecting a surface temperature of said substrate.
References Cited (Backward Citations)
US4775203A
Cited
US5235399A
Cited
US5372850A
Cited
US5406445A
Cited
JPH07268634A
Cited
US5527567A
Cited
US5618761A
Cited
US5781693A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-15 | 2002-09-14 | 2003-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-15 | 2006-09-14 | 2007-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-15 | 2010-09-14 | 2011-03-16 | $7700.00 | Window Closed / Lapsed |