US5877558A
Expired / Lapsed
US
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Gallium nitride-based III-V group compound semiconductor
Assignee: Nichia Corp
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Filing: 1997-12-19
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Granted: 1999-03-02
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Expires: 2017-12-19
Abstract
Abstract A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
Inventors
- 👤 Shuji Nakamura
- 👤 Takao Yamada
- 👤 Masayuki Senoh
- 👤 Motokazu Yamada
- 👤 Kanji Bando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 12:04
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10F; H10F71/00; H10F71/138; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10H20/833; H10D62/00; H10D62/80; H10D62/85; H10D62/8503; H10H20/01; H10H20/032; H10H20/831; H10H20/84; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/536; H10W72/541; H10W72/547; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/921; H10W72/923; H10W72/926; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
194 words
A gallium nitride-based III-V Group compound semiconductor comprising: a substrate having a substantially square surface shape, said substrate having first and second major surfaces; a semiconductor stacked layer structure arranged over said first major surface of the substrate, and comprising n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor provided over said n-type semiconductor layer, said p-type semiconductor layer having a cut-off portion partially exposing a surface of said n-type semiconductor layer; a first electrode structure provided on the exposed surface of said n-type semiconductor layer; a second electrode structure provided in electrical contact with said p-type semiconductor layer, and arranged on the same side of the substrate as said first electrode structure, said second electrode structure comprising an electrode layer having a light-transmitting property and provided on a substantially entire surface of said p-type semiconductor layer, and a bonding pad provided on said electrode layer; and a continuous insulating protective film covering a portion of the upper surface of said bonding pad, a substantially entire upper surface of said electrode layer as well as a portion of the exposed surface of said n-type semiconductor layer.
Claim 2
Dependent Claim
194 words
A gallium nitride-based III-V Group compound semiconductor comprising: a substrate having a substantially square surface shape, said substrate having first and second major surfaces; a semiconductor stacked layer structure arranged over said first major surface of the substrate, and comprising n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor provided over said n-type semiconductor layer, said p-type semiconductor layer having a cut-off portion partially exposing a surface of said n-type semiconductor layer; a first electrode structure provided on the exposed surface of said n-type semiconductor layer; a second electrode structure provided in electrical contact with said p-type semiconductor layer, and arranged on the same side of the substrate as said first electrode structure, said second electrode structure comprising an electrode layer having a light-transmitting property and provided on a substantially entire surface of said p-type semiconductor layer, and a bonding pad provided on said electrode layer; and a continuous insulating protective film covering a portion of the upper surface of said bonding pad, a substantially entire upper surface of said electrode layer as well as a portion of the exposed surface of said n-type semiconductor layer.
Claim 3
Dependent Claim
23 words
The device according to claim 1, wherein said protective film covers also a portion of the upper surface of said first electrode structure.
Claim 4
Dependent Claim
256 words
A gallium nitride-based III-V Group compound semiconductor light-emitting device comprising: a substrate having a substantially square surface shape, said substrate having first and second major surfaces; a semiconductor stacked layer structure arranged over said first major surface of the substrate, and comprising n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor provided over said n-type semiconductor layer, said p-type semiconductor layer having a cut-off portion partially exposing a surface of said n-type semiconductor layer; a first electrode structure provide don the exposed surface of said n-type semiconductor layer; a second electrode structure provided in electrical contact with said p-type semiconductor layer, and arranged on the same side of the substrate as said first electrode structure, said second electrode structure comprising a light-transmitting electrode layer and provided on a substantially entire surface of said p-type semiconductor layer, and a bonding pad provided on said light-transmitting electrode layer, wherein said bonding pad is arranged at first portion corresponding to a first corner portion of said substrate, and said first electrode structure is arranged at a second portion corresponding to a second corner portion of said substrate, and wherein said first and second corner portion of said substrate are diagonally arranged with respect to the substantially square surface of said substrate; and a continuous insulating protective film covering a substantially entire surface of said light-transmitting electrode layer exposed between said first electrode structure and said bonding pad, as well as a portion of the exposed surface of said n-type semiconductor layer.
Claim 5
Dependent Claim
256 words
A gallium nitride-based III-V Group compound semiconductor light-emitting device comprising: a substrate having a substantially square surface shape, said substrate having first and second major surfaces; a semiconductor stacked layer structure arranged over said first major surface of the substrate, and comprising n-type gallium nitride-based III-V Group compound semiconductor layer and a p-type gallium nitride-based III-V Group compound semiconductor provided over said n-type semiconductor layer, said p-type semiconductor layer having a cut-off portion partially exposing a surface of said n-type semiconductor layer; a first electrode structure provide don the exposed surface of said n-type semiconductor layer; a second electrode structure provided in electrical contact with said p-type semiconductor layer, and arranged on the same side of the substrate as said first electrode structure, said second electrode structure comprising a light-transmitting electrode layer and provided on a substantially entire surface of said p-type semiconductor layer, and a bonding pad provided on said light-transmitting electrode layer, wherein said bonding pad is arranged at first portion corresponding to a first corner portion of said substrate, and said first electrode structure is arranged at a second portion corresponding to a second corner portion of said substrate, and wherein said first and second corner portion of said substrate are diagonally arranged with respect to the substantially square surface of said substrate; and a continuous insulating protective film covering a substantially entire surface of said light-transmitting electrode layer exposed between said first electrode structure and said bonding pad, as well as a portion of the exposed surface of said n-type semiconductor layer.
Claim 6
Dependent Claim
22 words
The device according to claim 3, wherein said protective film covers also a portion of the upper surface of said bonding pad.
Claim 7
Dependent Claim
23 words
The device according to claim 3, wherein said protective film covers also a portion of the upper surface of said first electrode structure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-01 | 2002-08-31 | 2003-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-01 | 2006-08-31 | 2007-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-01 | 2010-08-31 | 2011-03-02 | $7700.00 | Window Closed / Lapsed |