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US5874368A Expired / Lapsed US ⏱️ 0.0 years remaining

Silicon nitride from bis(tertiarybutylamino)silane

Assignee: Versum Materials US LLC
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Filing: 1997-10-02
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Granted: 1999-02-23
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Expires: 2017-10-02
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Abstract

Abstract A process for the low pressure chemical vapor deposition of silicon nitride from ammonia and a silane of the formula: (t-C4H9NH)2SiH2 provides improved properties of the resulting film for use in the semiconductor industry.

Inventors

  • 👤 Ravi Kumar Laxman
  • 👤 David Allen Roberts
  • 👤 Arthur Kenneth Hochberg
  • 👤 Herman Gene Hockenhull
  • 👤 Felicia Diane Kaminsky

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 01:51
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; C23C16/345; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6682; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 42 words
A process for the low pressure chemical vapor deposition of silicon nitride on a substrate, comprising: providing a substrate; contacting ammonia and a silane of the formula (t-C 4 H 9 NH) 2 SiH 2 to deposit silicon nitride on the substrate.
Claim 2
Dependent Claim 42 words
A process for the low pressure chemical vapor deposition of silicon nitride on a substrate, comprising: providing a substrate; contacting ammonia and a silane of the formula (t-C 4 H 9 NH) 2 SiH 2 to deposit silicon nitride on the substrate.
Claim 3
Dependent Claim 21 words
The process of claim 1 wherein the temperature of the substrate is in the range of approximately 500° to 800° C.
Claim 4
Dependent Claim 19 words
The process of claim 1 wherein the pressure is in the range of approximately 20 mTorr to 2 Torr.
Claim 5
Dependent Claim 18 words
The process of claim 1 wherein the molar ratio of ammonia to silane is greater than approximately 2:1.
Claim 6
Dependent Claim 10 words
The process of claim 1 wherein the substrate is silicon.
Claim 7
Dependent Claim 12 words
The process of claim 1 wherein the substrate is an electronic device.
Claim 8
Dependent Claim 13 words
The process of claim 1 wherein the substrate is a flat panel display.
Claim 9
Dependent Claim 98 words
A low temperature chemical vapor deposition of silicon nitride in a reaction zone, comprising the steps of: a) heating a substrate to a temperature in the range of approximately 500°-800° C. in said zone; b) maintaining the substrate in a vacuum at a pressure in the range of approximately 20 mTorr-2 Torr in said zone; c) introducing into said zone ammonia and a silane of the formula: (t-C 4 H 9 NH) 2 SiH 2 ; and d) maintaining the conditions of a) through c) sufficient to cause a film of silicon nitride to deposit on the substrate.
Claim 10
Dependent Claim 98 words
A low temperature chemical vapor deposition of silicon nitride in a reaction zone, comprising the steps of: a) heating a substrate to a temperature in the range of approximately 500°-800° C. in said zone; b) maintaining the substrate in a vacuum at a pressure in the range of approximately 20 mTorr-2 Torr in said zone; c) introducing into said zone ammonia and a silane of the formula: (t-C 4 H 9 NH) 2 SiH 2 ; and d) maintaining the conditions of a) through c) sufficient to cause a film of silicon nitride to deposit on the substrate.

References Cited (Backward Citations)

US3574677A Cited
US4777205A Cited
US4992299A Cited
US5234869A Cited
JPH06132284A Cited
US5486589A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-02-22 2002-08-24 2003-02-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-02-22 2006-08-24 2007-02-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-02-22 2010-08-24 2011-02-23 $7700.00 Window Closed / Lapsed

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