US3574677A
Expired / Lapsed
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Method of producing a protective layer from a semiconductor nitrogen compound for semiconductor purposes
Assignee: Siemens AG
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Filing: 1967-04-28
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Granted: 1971-04-13
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Expires: 1987-04-28
Abstract
Abstract A METHOD OF PRODUCING A PROTECTIVE LAYER AT THE SURFACE OF A SEMICONDUCTOR CRYSTAL. ORGANIC SILICON NITROGEN COMPOUNDS ARE PYROLYTICALLY (THERMALLY) PRECIPITATED FROM GASEOUS PHASE TO FORM SILICON NITRIDE ON THE SEMICONDUCTOR.
Inventors
- 👤 Erich Pammer
- 👤 Horst Panholzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; C30; C30B; C30B15/00; C30B15/20; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10W; H10W74/00; H10W74/40; H10W74/43; H10P14/6689
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-12 | 1974-10-12 | 1975-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-12 | 1978-10-12 | 1979-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-12 | 1982-10-12 | 1983-04-13 | $7700.00 | Window Closed / Lapsed |