US5872387A
Expired / Lapsed
US
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Deuterium-treated semiconductor devices
Assignee: University of Illinois System
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Filing: 1996-01-16
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Granted: 1999-02-16
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Expires: 2016-01-16
Abstract
Abstract Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
Inventors
- 👤 Joseph W. Lyding
- 👤 Karl Hess
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:13
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01338; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10P95/00; H10P95/90; H10P95/94; H10D64/01342; H10D64/691; Y; Y10; Y10S; Y10S438/00; Y10S438/91; Y10S438/974
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
49 words
A field effect transistor having an interface between a semiconductive silicon layer and a gate oxide layer comprising silicon oxy nitride, characterized by post-fabrication passivation of said interface in a heated, deuterium gas-enriched atmosphere so as to increase the resilience of the field effect transistor to hot electron effects.
Claim 2
Dependent Claim
49 words
A field effect transistor having an interface between a semiconductive silicon layer and a gate oxide layer comprising silicon oxy nitride, characterized by post-fabrication passivation of said interface in a heated, deuterium gas-enriched atmosphere so as to increase the resilience of the field effect transistor to hot electron effects.
Claim 3
Dependent Claim
115 words
A field effect transistor having an interface between a silicon semiconductive layer and a gate oxide layer comprising silicon oxy nitride, said transistor being passivated by covalently bound deuterium atoms at said interface and thereby having an increased resilience to hot carrier effects, said field effect transistor being characterized by post-fabrication passivation for at least one hour in a deuterium gas-enriched atmosphere heated to a temperature of at least 200° C., and wherein said post-fabrication passivation is conducted sufficiently to provide to said transistor a practical lifetime at least about ten times that provided by a corresponding passivation with hydrogen gas, wherein practical lifetime is taken as 20% transconductance degradation as a result of electrical
Claim 4
Dependent Claim
115 words
A field effect transistor having an interface between a silicon semiconductive layer and a gate oxide layer comprising silicon oxy nitride, said transistor being passivated by covalently bound deuterium atoms at said interface and thereby having an increased resilience to hot carrier effects, said field effect transistor being characterized by post-fabrication passivation for at least one hour in a deuterium gas-enriched atmosphere heated to a temperature of at least 200° C., and wherein said post-fabrication passivation is conducted sufficiently to provide to said transistor a practical lifetime at least about ten times that provided by a corresponding passivation with hydrogen gas, wherein practical lifetime is taken as 20% transconductance degradation as a result of electrical
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-15 | 2002-08-17 | 2003-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-15 | 2006-08-17 | 2007-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-15 | 2010-08-17 | 2011-02-16 | $7700.00 | Window Closed / Lapsed |