US5872059A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming complementary type conductive regions on a substrate
Assignee: Micron Technology Inc
•
Filing: 1998-04-24
•
Granted: 1999-02-16
•
Expires: 2018-04-24
Abstract
Abstract A method of forming complementary type conductive regions on a substrate includes, a) providing a first etch stop layer over a substrate; b) etching a void through the first etch stop layer inwardly towards the substrate; c) providing a first conductive layer of a first conductive material over the first etch stop layer and into the void; d) removing the first conductive layer over the first etch stop layer to eliminate all first conductive material from atop the first etch stop layer, and leaving first conductive material in the void; e) removing the remaining first etch stop layer from the substrate thereby defining a remaining region of first conductive layer; f) providing a second conductive layer of a second conductive material over the substrate and remaining first conductive layer region; and g) removing the second conductive layer over the first conductive layer to eliminate all second conductive material from atop the first conductive layer, and leaving second conductive material atop the substrate which is adjacent the projecting first conductive material region.
Inventors
- 👤 Trung Tri Doan
- 👤 Charles H. Dennison
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:17
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0177; H10D84/0179; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
92 words
A method of forming a complementary type conductive regions on a substrate comprising: providing a first conductive layer of a first conductive material over a substrate; forming an opening in the first conductive layer; forming a second conductive layer of a second conductive material over the first conductive layer and within the opening; removing the second conductive layer from over the first conductive layer while leaving the second conductive material within the opening; and after removing the second conductive layer, forming complementary discrete circuit devices from the first and second conductive layers.
Claim 2
Independent Claim
92 words
A method of forming a complementary type conductive regions on a substrate comprising: providing a first conductive layer of a first conductive material over a substrate; forming an opening in the first conductive layer; forming a second conductive layer of a second conductive material over the first conductive layer and within the opening; removing the second conductive layer from over the first conductive layer while leaving the second conductive material within the opening; and after removing the second conductive layer, forming complementary discrete circuit devices from the first and second conductive layers.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the second conductive layer comprises a different conductive material than the first conductive layer.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein at least on of the first and second conductive layers comprises polysilicon.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein both of the first and second conductive layers comprise polysilicon.
Claim 6
Dependent Claim
22 words
The method of claim 1 wherein at least one of the first and second conductive layers comprises a material other than polysilicon.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein the removing step is conducted by chemical-mechanical polishing.
Claim 8
Dependent Claim
23 words
The method of claim 1 wherein the removing step is conducted by application of a planarizing layer and etching the planarizing layer back.
Claim 9
Dependent Claim
24 words
The method of claim 1 further comprising providing an etch stop layer over the first conductive layer prior to providing the second conductive layer.
Claim 10
Dependent Claim
44 words
The method of claim 1 further comprising providing an etch stop layer over the first conductive layer prior to providing the second conductive layer, the etch stop layer constituting an oxide layer produced by oxidizing the exposed outer surface to the first conductive layer.
Claim 11
Dependent Claim
33 words
The method of claim 1 wherein the first conductive material comprises polysilicon doped with a first conductivity type impurity, and the second conductive material comprises polysilicon doped with a second conductivity type impurity.
Claim 12
Dependent Claim
36 words
The method of claim 1 wherein the first conductive material comprises polysilicon doped with a conductivity enhancing impurity of a p or n type, and the second conductive material predominantly comprises a material other than polysilicon.
Claim 13
Dependent Claim
64 words
The method of claim 1 wherein the substrate is comprised of one of a p or n conductivity type semiconductive material, the method further comprising implanting into the substrate through the void prior to providing the second conductive layer with the other of a p or n conductivity type implant material to form said other of a p or n type conductivity substrate well.
Claim 14
Independent Claim
123 words
A method of forming complementary type conductive regions on a substrate comprising: providing a first conductive layer of a first conductive material over a substrate; forming a void through the first conductive layer; providing a second conductive layer of a second conductive material over the first conductive layer and into the void; removing the second conductive layer over the first conductive layer to eliminate all second conductive material from atop the first conductive layer, and leaving second conductive material adjacent first conductive material atop the substrate in the prior void; and after removing the second conductive layer, patterning and etching the remaining first conductive layer and remaining second conductive layer to define complementary discrete circuit devices from the first and second conductive layers.
Claim 15
Independent Claim
123 words
A method of forming complementary type conductive regions on a substrate comprising: providing a first conductive layer of a first conductive material over a substrate; forming a void through the first conductive layer; providing a second conductive layer of a second conductive material over the first conductive layer and into the void; removing the second conductive layer over the first conductive layer to eliminate all second conductive material from atop the first conductive layer, and leaving second conductive material adjacent first conductive material atop the substrate in the prior void; and after removing the second conductive layer, patterning and etching the remaining first conductive layer and remaining second conductive layer to define complementary discrete circuit devices from the first and second conductive layers.
Claim 16
Dependent Claim
18 words
The method of claim 13 wherein at least one of the first and second conductive layers comprises polysilicon.
Claim 17
Dependent Claim
16 words
The method of claim 13 wherein both of the first and second conductive layers comprise polysilicon.
Claim 18
Dependent Claim
22 words
The method of claim 13 wherein at least one of the first and second conductive layers comprises a material other than polysilicon.
Claim 19
Independent Claim
158 words
A method of forming complementary type conductive regions on a substrate comprising: providing a first conductive layer of a first conductive material over a substrate, the first conductive material comprising polysilicon; etching a void through the first conductive layer; providing a second conductive layer of a second conductive material over the first conductive layer and into the void, the second material being different from the first material; removing the second conductive layer over the first conductive layer to eliminate all second conductive material from atop the first conductive layer, and leaving second conductive material adjacent first conductive material atop the substrate in the prior void; and after removing the second conductive layer, patterning and etching the remaining first conductive layer and remaining second conductive layer in the same masking step to separate second conductive material from first conductive material and to define complementary discrete circuit devices from the first and second conductive layers in the same masking step.
Claim 20
Independent Claim
158 words
A method of forming complementary type conductive regions on a substrate comprising: providing a first conductive layer of a first conductive material over a substrate, the first conductive material comprising polysilicon; etching a void through the first conductive layer; providing a second conductive layer of a second conductive material over the first conductive layer and into the void, the second material being different from the first material; removing the second conductive layer over the first conductive layer to eliminate all second conductive material from atop the first conductive layer, and leaving second conductive material adjacent first conductive material atop the substrate in the prior void; and after removing the second conductive layer, patterning and etching the remaining first conductive layer and remaining second conductive layer in the same masking step to separate second conductive material from first conductive material and to define complementary discrete circuit devices from the first and second conductive layers in the same masking step.
Claim 21
Independent Claim
204 words
A method of forming complementary type conductive regions on a substrate comprising: providing a first conductive layer of a first conductive material over a substrate, the substrate being comprised of a p conductivity type semiconductive material; etching a void through the first conductive layer, the void being etched to outwardly expose the substrate; providing a second conductive layer of a second conductive material over the first conductive layer and into the void, the second material being different from the first material; removing the second conductive layer over the first conductive layer to eliminate all second conductive material from atop the first conductive layer, and leaving second conductive material adjacent first conductive material atop the substrate in the prior void; implanting into the substrate through the void prior to providing the second conductive layer with an n conductivity type implant material to form an n type conductivity substrate well; providing a gate dielectric layer over the substrate prior to providing the first conductive layer over the substrate; and patterning and etching the remaining first conductive layer and remaining second conductive layer in the same masking step to define complementary field effect transistor gates from the first and second conductive layers in the same masking step.
Claim 22
Independent Claim
204 words
A method of forming complementary type conductive regions on a substrate comprising: providing a first conductive layer of a first conductive material over a substrate, the substrate being comprised of a p conductivity type semiconductive material; etching a void through the first conductive layer, the void being etched to outwardly expose the substrate; providing a second conductive layer of a second conductive material over the first conductive layer and into the void, the second material being different from the first material; removing the second conductive layer over the first conductive layer to eliminate all second conductive material from atop the first conductive layer, and leaving second conductive material adjacent first conductive material atop the substrate in the prior void; implanting into the substrate through the void prior to providing the second conductive layer with an n conductivity type implant material to form an n type conductivity substrate well; providing a gate dielectric layer over the substrate prior to providing the first conductive layer over the substrate; and patterning and etching the remaining first conductive layer and remaining second conductive layer in the same masking step to define complementary field effect transistor gates from the first and second conductive layers in the same masking step.
References Cited (Backward Citations)
US4605447A
Cited
US4555842A
Cited
US4637836A
Cited
US5244835A
Cited
US5563093A
Cited
US5654242A
Cited
US5480830A
Cited
US5604155A
Cited
US5573633A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-15 | 2002-08-17 | 2003-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-15 | 2006-08-17 | 2007-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-15 | 2010-08-17 | 2011-02-16 | $7700.00 | Window Closed / Lapsed |