US5573633A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of chemically mechanically polishing an electronic component
Assignee: International Business Machines Corp
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Filing: 1995-11-14
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Granted: 1996-11-12
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Expires: 2015-11-14
Abstract
Abstract A method of forming interlevel studs of at least two different materials in an insulating layer on a semiconductor wafer. After forming an insulating layer of BPSG on a Front End of the Line (FEOL) structure, the BPSG layer is chem-mech polished. Vias are formed through the BPSG layer in array areas. A thin doped poly layer is deposited on the surface of the BPSG layer. The structure is annealed and vias are formed in support areas. Dopants are implanted into support areas through the vias. After annealing to diffuse implanted dopant, a metal layer is formed on the poly layer. Then, the structure is chem-mech polished back to the poly layer. A final chem-mech polish step removes the poly layer, leaving metal studs in the support areas and poly-lined metal cored studs in the array areas.
Inventors
- 👤 Jeffrey P. Gambino
- 👤 Mark A. Jaso
- 👤 Larry A. Nesbit
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:10
CPC Classifications
H; H10; H10P; H10P52/00; H10P52/40; H10P52/403; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062; H10W20/071; H10W20/092
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
146 words
A method of forming interlevel studs in an insulating layer on a semiconductor wafer, said studs being of at least two different materials, said method comprising the steps of: a) forming a layer of insulating material on a semiconductor wafer; b) planarizing said insulating layer; c) forming a first group of vias through said insulating layer; d) forming a layer of a first conducting material on said insulating layer; e) forming a second group of vias through said first conducting material layer and said insulating layer; f) forming a layer of a second conductive material, said layer of second conducting material filling said first and second group of vias; g) removing said second conductive layer to expose said first conductive material layer, such that said second conductive material remains only in said first and second via groups; and, h) removing said exposed first conductive material layer.
Claim 2
Independent Claim
146 words
A method of forming interlevel studs in an insulating layer on a semiconductor wafer, said studs being of at least two different materials, said method comprising the steps of: a) forming a layer of insulating material on a semiconductor wafer; b) planarizing said insulating layer; c) forming a first group of vias through said insulating layer; d) forming a layer of a first conducting material on said insulating layer; e) forming a second group of vias through said first conducting material layer and said insulating layer; f) forming a layer of a second conductive material, said layer of second conducting material filling said first and second group of vias; g) removing said second conductive layer to expose said first conductive material layer, such that said second conductive material remains only in said first and second via groups; and, h) removing said exposed first conductive material layer.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the first conductive material is polysilicon and the second conductive material is a metal.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the planarizing step (b) comprises chem-mech polishing the insulating layer.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein the removing step (g) comprises chem-mech polishing the second conducting material layer.
Claim 6
Dependent Claim
44 words
The method of claim 2 wherein the polysilicon layer is doped poly and, before the step (e) of forming the second group of vias, further comprising the step: d1) annealing the semiconductor wafer such that dopant diffuses from the doped poly into the substrate.
Claim 7
Dependent Claim
38 words
The method of claim 5, before the step (f) of forming the second conductive material layer further comprising the step: e1) implanting a dopant into said wafer through said second group of vias and annealing the semiconductor wafer.
Claim 8
Independent Claim
148 words
A method of forming interlevel studs in an insulating layer on a semiconductor wafer, said studs being of at least two different materials, said method comprising the steps of: a) forming a layer of insulating material on a semiconductor wafer; b) chem-mech polishing said insulating layer; c) etching a first group of vias through said insulating layer; d) depositing a polysilicon layer on said insulating layer; e) etching a second group of vias through said polysilicon layer and said insulating layer; f) implanting dopant into said wafer through said second group of vias and annealing said wafer; g) forming a metal layer, said metal layer filling said first and second group of vias; h) chem-mech polishing said metal layer to expose said polysilicon layer, such that metal remains only in said first and second via groups; and i) chem-mech polishing said exposed polysilicon layer from said insulating layer.
Claim 9
Independent Claim
148 words
A method of forming interlevel studs in an insulating layer on a semiconductor wafer, said studs being of at least two different materials, said method comprising the steps of: a) forming a layer of insulating material on a semiconductor wafer; b) chem-mech polishing said insulating layer; c) etching a first group of vias through said insulating layer; d) depositing a polysilicon layer on said insulating layer; e) etching a second group of vias through said polysilicon layer and said insulating layer; f) implanting dopant into said wafer through said second group of vias and annealing said wafer; g) forming a metal layer, said metal layer filling said first and second group of vias; h) chem-mech polishing said metal layer to expose said polysilicon layer, such that metal remains only in said first and second via groups; and i) chem-mech polishing said exposed polysilicon layer from said insulating layer.
Claim 10
Dependent Claim
34 words
The method of claim 7 wherein polysilicon is doped poly and the step (d) of depositing the doped poly layer includes annealing the wafer to diffuse dopant from the doped poly into the substrate.
Claim 11
Dependent Claim
14 words
The method of claim 7 wherein the insulating layer is a layer of BPSG.
Claim 12
Dependent Claim
33 words
The method of claim 7 wherein said deposited poly layer lines said first group of vias such that studs formed in said first group of vias are poly lined with a metal core.
Claim 13
Dependent Claim
36 words
The method of claim 7 wherein the implanting step (f) comprises implanting a first dopant a plurality of said second group of vias and a second dopant into the remainder of said second group of vias.
References Cited (Backward Citations)
US5008216A
Cited
US5008730A
Cited
US5143820A
Cited
US5026666A
Cited
US5244534A
Cited
US5252516A
Cited
US5403779A
Cited
US5328553A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-12 | 2000-05-13 | 2000-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-12 | 2004-05-13 | 2004-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-12 | 2008-05-13 | 2008-11-12 | $7700.00 | Window Closed / Lapsed |