Patent US2598032A successfully refreshed from Google Patents.
Patent US5871886A successfully refreshed from Google Patents.
US5871886A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sandwiched middle antireflection coating (SMARC) process
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1996-12-12
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Granted: 1999-02-16
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Expires: 2016-12-12
Abstract
Abstract A method of patterning a layer of reflective material, such as a layer of conductor metal, using a layer of antireflection coating material sandwiched between two layers of photoresist. A first layer of photoresist is formed on an integrated circuit wafer and provides a planar surface for subsequent layers of material. A layer of antireflection coating material is formed on the layer of first photoresist and a layer of second photoresist is formed on the layer of antireflection coating material. The layer of second photoresist is selectively exposed and developed. The layer of antireflection coating material is patterned using dry etching and the patterned layer of second photoresist as a mask. The layer of first photoresist is then patterned using dry etching and the patterned layer of antireflection coating material as a mask. The layer of reflecting material is then patterned using dry etching and the patterned layer of first photoresist as a mask. The patterned layer of first photoresist is then removed.
Inventors
- 👤 Chen-Hua Yu
- 👤 Syun-Ming Jang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 04:07
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
266 words
A method of patterning a layer of reflective material of an integrated circuit, comprising the steps of: providing a layer of reflective material on an integrated circuit wafer; forming a layer of first photoresist over said layer of reflective material; forming a layer of antireflection coating material over said layer of first photoresist; forming a layer of second photoresist over said layer of antireflection coating material; selectively exposing said layer of second photoresist through a mask having a pattern; developing said exposed layer of second photoresist, thereby forming said pattern in said layer of second photoresist; patterning said layer of antireflection coating material by means of etching away that part of said layer of antireflection coating material not covered by said selectively exposed and developed layer of second photoresist using said selectively exposed and developed layer of second photoresist as a mask; patterning said layer of first photoresist by means of etching away that part of said layer of first photoresist not covered by said patterned layer of antireflection coating material using said patterned layer of antireflection material as a mask thereby etching away said selectively exposed and developed layer of second photoresist whereby all of said second photoresist is removed; patterning said layer of reflective material by means of etching away that part of said layer of reflective material not covered by said patterned layer of first photoresist using said patterned layer of first photoresist as a mask thereby etching away said patterned layer of antireflection coating material whereby all of said antireflection coating material is removed; and removing said patterned layer of first photoresist.
Claim 2
Independent Claim
266 words
A method of patterning a layer of reflective material of an integrated circuit, comprising the steps of: providing a layer of reflective material on an integrated circuit wafer; forming a layer of first photoresist over said layer of reflective material; forming a layer of antireflection coating material over said layer of first photoresist; forming a layer of second photoresist over said layer of antireflection coating material; selectively exposing said layer of second photoresist through a mask having a pattern; developing said exposed layer of second photoresist, thereby forming said pattern in said layer of second photoresist; patterning said layer of antireflection coating material by means of etching away that part of said layer of antireflection coating material not covered by said selectively exposed and developed layer of second photoresist using said selectively exposed and developed layer of second photoresist as a mask; patterning said layer of first photoresist by means of etching away that part of said layer of first photoresist not covered by said patterned layer of antireflection coating material using said patterned layer of antireflection material as a mask thereby etching away said selectively exposed and developed layer of second photoresist whereby all of said second photoresist is removed; patterning said layer of reflective material by means of etching away that part of said layer of reflective material not covered by said patterned layer of first photoresist using said patterned layer of first photoresist as a mask thereby etching away said patterned layer of antireflection coating material whereby all of said antireflection coating material is removed; and removing said patterned layer of first photoresist.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said layer of reflective material is a layer of polysilicon.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein said layer of reflective material is a layer of refractory metal formed over a layer of polysilicon.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein said layer of antireflection coating material is a layer of amorphous silicon deposited at a temperature of between about 20° C. and 150° C.
Claim 6
Dependent Claim
30 words
The method of claim 1 wherein said layer of antireflection coating material is a layer of titanium nitride deposited at a temperature of between about 20° C. and 150° C.
Claim 7
Dependent Claim
21 words
The method of claim 1 wherein said layer of first photoresist has a thickness of between about 3000 and 8000 Angstroms.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein said layer of second photoresist has a thickness of between about 500 and 5000 Angstroms.
Claim 9
Dependent Claim
22 words
The method of claim 1 wherein said layer of antireflection coating material has a thickness of between about 300 and 2500 Angstroms.
Claim 10
Dependent Claim
49 words
The method of claim 1 wherein said etching away that part of said layer of antireflection coating material not covered by said selectively exposed and developed layer of second photoresist using said selectively exposed and developed layer of second photoresist as a mask is accomplished using dry etching methods.
Claim 11
Dependent Claim
43 words
The method of claim 1 wherein said etching away that part of said layer of first photoresist not covered by said patterned layer of antireflection coating material using said patterned layer of antireflection material as a mask is accomplished using dry etching methods.
Claim 12
Independent Claim
276 words
A method of fabricating an integrated circuit wafer, comprising the steps of: providing an integrated circuit wafer; forming devices and isolation regions in said integrated circuit wafer; forming a layer of reflective material on said integrated circuit wafer; forming a layer of first photoresist over said layer of reflective material; forming a layer of antireflection coating material over said layer of first photoresist; forming a layer of second photoresist over said layer of antireflection coating material; selectively exposing said layer of second photoresist through a mask having a pattern; developing said exposed layer of second photoresist, thereby forming said pattern in said layer of second photoresist; patterning said layer of antireflection coating material by means of etching away that part of said layer of antireflection coating material not covered by said selectively exposed and developed layer of second photoresist using said selectively exposed and developed layer of second photoresist as a mask; patterning said layer of first photoresist by means of etching away that part of said layer of first photoresist not covered by said patterned layer of antireflection coating material using said patterned layer of antireflection material as a mask thereby etching away said selectively exposed and developed layer of second photoresist whereby all of said second photoresist is removed; patterning said layer of reflective material by means of etching away that part of said layer of reflective material not covered by said patterned layer of first photoresist using said patterned layer of first photoresist as a mask thereby etching away said patterned layer of antireflection coating material whereby all of said antireflection coating material is removed; and removing said patterned layer of first photoresist.
Claim 13
Independent Claim
276 words
A method of fabricating an integrated circuit wafer, comprising the steps of: providing an integrated circuit wafer; forming devices and isolation regions in said integrated circuit wafer; forming a layer of reflective material on said integrated circuit wafer; forming a layer of first photoresist over said layer of reflective material; forming a layer of antireflection coating material over said layer of first photoresist; forming a layer of second photoresist over said layer of antireflection coating material; selectively exposing said layer of second photoresist through a mask having a pattern; developing said exposed layer of second photoresist, thereby forming said pattern in said layer of second photoresist; patterning said layer of antireflection coating material by means of etching away that part of said layer of antireflection coating material not covered by said selectively exposed and developed layer of second photoresist using said selectively exposed and developed layer of second photoresist as a mask; patterning said layer of first photoresist by means of etching away that part of said layer of first photoresist not covered by said patterned layer of antireflection coating material using said patterned layer of antireflection material as a mask thereby etching away said selectively exposed and developed layer of second photoresist whereby all of said second photoresist is removed; patterning said layer of reflective material by means of etching away that part of said layer of reflective material not covered by said patterned layer of first photoresist using said patterned layer of first photoresist as a mask thereby etching away said patterned layer of antireflection coating material whereby all of said antireflection coating material is removed; and removing said patterned layer of first photoresist.
Claim 14
Dependent Claim
16 words
The method of claim 11 wherein said layer of reflective material is a layer of polysilicon.
Claim 15
Dependent Claim
23 words
The method of claim 11 wherein said layer of reflective material is a layer of refractory metal formed over a layer of polysilicon.
Claim 16
Dependent Claim
30 words
The method of claim 11 wherein said layer of antireflection coating material is a layer of amorphous silicon deposited at a temperature of between about 20° C. and 150° C.
Claim 17
Dependent Claim
30 words
The method of claim 11 wherein said layer of antireflection coating material is a layer of titanium nitride deposited at a temperature of between about 20° C. and 150° C.
Claim 18
Dependent Claim
21 words
The method of claim 11 wherein said layer of first photoresist has a thickness of between about 3000 and 8000 Angstroms.
Claim 19
Dependent Claim
21 words
The method of claim 11 wherein said layer of second photoresist has a thickness of between about 500 and 5000 Angstroms.
Claim 20
Dependent Claim
22 words
The method of claim 11 wherein said layer of antireflection coating material has a thickness of between about 300 and 2500 Angstroms.
Claim 21
Dependent Claim
49 words
The method of claim 11 wherein said etching away that part of said layer of antireflection coating material not covered by said selectively exposed and developed layer of second photoresist using said selectively exposed and developed layer of second photoresist as a mask is accomplished using dry etching methods.
Claim 22
Dependent Claim
43 words
The method of claim 11 wherein said etching away that part of said layer of first photoresist not covered by said patterned layer of antireflection coating material using said patterned layer of antireflection material as a mask is accomplished using dry etching methods.
References Cited (Backward Citations)
US4557797A
Cited
US4820611A
Cited
US5286608A
Cited
US5308742A
Cited
US5330883A
Cited
US5441616A
Cited
US5506166A
Cited
US5449639A
Cited
US5688365A
Cited
US5672243A
Cited
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