Patent FR1567893A successfully refreshed from Google Patents.
US5866476A
Expired / Lapsed
US
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Methods for forming moisture blocking layers
Assignee: Samsung Electronics Co Ltd
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Filing: 1997-03-27
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Granted: 1999-02-02
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Expires: 2017-03-27
Abstract
Abstract A method for forming an insulating layer for a microelectronic device includes the steps of forming a conductive pattern on a surface of a microelectronic substrate, and forming a spin-on-glass layer on the surface of the microelectronic substrate covering the conductive pattern. The spin-on-glass layer is baked at a temperature in the range of 400° C. to 750° C., and a moisture blocking layer is formed on the baked spin-on-glass layer. By reducing moisture absorbed from the air into the spin-on-glass layer, a relatively low etch rate and a relatively low dielectric constant can be maintained for the spin-on-glass layer. Related structures are also discussed.
Inventors
- 👤 Ji-Hyun Choi
- 👤 Hae-Jeong Lee
- 👤 Byung-keun Hwang
- 👤 Ju-Son Gou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10W; H10W42/00; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6548; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6925; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10P14/63; H10P14/6326; H10P14/6342
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
92 words
A method for forming an insulating layer for a microelectronic device, said method comprising the steps of: forming a conductive pattern on a surface of a microelectronic substrate; forming a spin-on-glass layer on said surface of said microelectronic substrate covering said conductive pattern; baking said spin-on-glass layer at a temperature in the range of 400° C. to 750° C. forming a moisture blocking layer on said baked spin-on-glass layer; and annealing said spin-on-glass layer and said moisture blocking layer at a temperature in the range of approximately 700° C. to 750° C.
Claim 2
Independent Claim
92 words
A method for forming an insulating layer for a microelectronic device, said method comprising the steps of: forming a conductive pattern on a surface of a microelectronic substrate; forming a spin-on-glass layer on said surface of said microelectronic substrate covering said conductive pattern; baking said spin-on-glass layer at a temperature in the range of 400° C. to 750° C. forming a moisture blocking layer on said baked spin-on-glass layer; and annealing said spin-on-glass layer and said moisture blocking layer at a temperature in the range of approximately 700° C. to 750° C.
Claim 3
Dependent Claim
26 words
A method according to claim 1 wherein said spin-on-glass layer is formed from a material chosen from the group consisting of silicate, siloxane, and hydrogen silsesquioxane.
Claim 4
Dependent Claim
24 words
A method according to claim 1 wherein the step of forming said spin-on-glass layer is followed by the step of hardening said spin-on-glass layer.
Claim 5
Dependent Claim
20 words
A method according to claim 3 wherein the hardening step comprises exposing said spin-on-glass layer to an O 2 plasma.
Claim 6
Dependent Claim
17 words
A method according to claim 3 wherein the hardening step comprises implanting ions into said spin-on-glass layer.
Claim 7
Dependent Claim
19 words
A method according to claim 5 wherein said implanting step comprises implanting argon (Ar) ions into said spin-on-glass layer.
Claim 8
Dependent Claim
28 words
A method according to claim 1 wherein the step of forming said moisture blocking layer comprises forming an oxide layer on said spin-on-glass layer by chemical vapor deposition.
Claim 9
Dependent Claim
31 words
A method according to claim 7 wherein said chemical vapor deposition is chosen from the group consisting of plasma-enhanced chemical vapor deposition, atmospheric-pressure chemical vapor deposition, or low-pressure chemical vapor deposition.
Claim 10
Dependent Claim
32 words
A method according to claim 1 wherein said step of forming said spin-on-glass layer is preceded by the step of forming an oxide layer on said conductive pattern by chemical vapor deposition.
Claim 11
Dependent Claim
44 words
A method according to claim 1 wherein said step of forming said spin-on-glass layer comprises forming a layer of hydrogen silsesquioxane, and wherein said step of forming said moisture blocking layer comprises forming an oxide layer on said spin-on-glass layer by chemical vapor deposition.
Claim 12
Dependent Claim
19 words
A method according to claim 1 wherein said annealing step is performed at a temperature of approximately 700° C.
Claim 13
Independent Claim
155 words
A method for forming an insulating layer for a microelectronic device, said method comprising the steps of: forming an insulating layer on a surface of a microelectronic substrate wherein said insulating layer comprises a first material wherein said step of forming said insulating layer comprises forming a layer of a spin-on-glass on said surface of said microelectronic substrate; forming a moisture blocking layer on said insulating layer opposite said substrate wherein said moisture blocking layer comprises a second material different than said first material; forming a contact hole in said moisture blocking layer and said insulating layer; and forming a conductive interconnection on said moisture blocking layer opposite said insulating layer wherein said conductive interconnection fills said contact hole; wherein said step of forming said contact hole is preceded by a separate step of annealing said insulating layer and said moisture blocking layer at a temperature in the range of 550° C. to 750° C.
Claim 14
Independent Claim
155 words
A method for forming an insulating layer for a microelectronic device, said method comprising the steps of: forming an insulating layer on a surface of a microelectronic substrate wherein said insulating layer comprises a first material wherein said step of forming said insulating layer comprises forming a layer of a spin-on-glass on said surface of said microelectronic substrate; forming a moisture blocking layer on said insulating layer opposite said substrate wherein said moisture blocking layer comprises a second material different than said first material; forming a contact hole in said moisture blocking layer and said insulating layer; and forming a conductive interconnection on said moisture blocking layer opposite said insulating layer wherein said conductive interconnection fills said contact hole; wherein said step of forming said contact hole is preceded by a separate step of annealing said insulating layer and said moisture blocking layer at a temperature in the range of 550° C. to 750° C.
Claim 15
Dependent Claim
45 words
A method according to claim 12 wherein said step of forming said insulating layer is preceded by the step of forming a conductive pattern on said substrate and wherein said contact hole exposes said conductive pattern so that said conductive material contacts said conductive pattern.
Claim 16
Dependent Claim
26 words
A method according to claim 12 wherein said spin-on-glass layer is formed from a material chosen from the group consisting of silicate, siloxane, and hydrogen silsesquioxane.
Claim 17
Dependent Claim
15 words
A method according to claim 12 further comprising the step of hardening said spin-on-glass layer.
Claim 18
Dependent Claim
20 words
A method according to claim 15 wherein said hardening step comprises exposing said spin-on-glass layer to an O 2 plasma.
Claim 19
Dependent Claim
17 words
A method according to claim 15 wherein said hardening step comprises implanting ions into said spin-on-glass layer.
Claim 20
Dependent Claim
17 words
A method according to claim 17 wherein said step of implanting ions comprises implanting argon (Ar) ions.
Claim 21
Dependent Claim
37 words
A method according to claim 12 wherein said step of forming said moisture blocking layer is preceded by the step of baking said insulating layer at a temperature in the range of 400° C. to 750° C.
Claim 22
Dependent Claim
28 words
A method according to claim 12 wherein said step of forming said moisture blocking layer comprises forming an oxide layer on said insulating layer by chemical vapor deposition.
Claim 23
Dependent Claim
44 words
A method according to claim 12 wherein said step of forming said insulating layer comprises forming a layer of hydrogen silsesquioxane, wherein said step of forming said moisture blocking layer comprises forming an oxide layer on said hydrogen silsesquioxane layer by chemical vapor deposition.
Claim 24
Dependent Claim
34 words
A method according to claim 12 wherein said step of forming said conductive interconnection is followed by the step of: forming a passivation layer on said moisture blocking layer and on said conductive interconnection.
Claim 25
Dependent Claim
19 words
A method according to claim 12 wherein said annealing step if performed at a temperature of approximately 700° C.
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