Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
105 words
A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through bump electrodes to the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip being encapsulated with a resin containing a filler, wherein the resin comprises a first resin and a second resin which are divided by the bump electrodes located on an outermost periphery of said semiconductor chip, the first resin is surrounded by the bump electrodes and a content of the filler in the first resin is smaller than the content of the filler in the second resin.
Claim 2
Dependent Claim
105 words
A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through bump electrodes to the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip being encapsulated with a resin containing a filler, wherein the resin comprises a first resin and a second resin which are divided by the bump electrodes located on an outermost periphery of said semiconductor chip, the first resin is surrounded by the bump electrodes and a content of the filler in the first resin is smaller than the content of the filler in the second resin.
Claim 3
Dependent Claim
51 words
The semiconductor device according to claim 1, wherein said content of the filler in the first resin is in the range of 5% by weight to 45% by weight and said content of the filler in the second resin is in the range of 20% by weight to 60% by weight.
Claim 4
Dependent Claim
51 words
The semiconductor device according to claim 1, wherein said content of the filler in the first resin is in the range of 20% by weight to 40% by weight and said content of the filler in the second resin is in the range of 30% by weight to 45% by weight.
Claim 5
Dependent Claim
31 words
The semiconductor device according to claim 1, wherein the content of at least one of sodium ions and chlorine ions is lower in the first resin than in the second resin.
Claim 6
Dependent Claim
53 words
The semiconductor device according to claim 4, wherein the content of each of sodium ions and chlorine ions in the first resin is 1 ppm or less and 5 ppm or less, respectively, and the content of each of sodium ions and chlorine ions in the second resin is 10 ppm or less.
Claim 7
Dependent Claim
27 words
The semiconductor device according to claim 1, wherein the first resin has a higher coefficient of thermal expansion and a lower elastic modulus than the second resin.
Claim 8
Dependent Claim
109 words
A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through bump electrodes to the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip being encapsulated with a resin containing a filler, wherein the resin comprises a first resin and a second resin which are divided by the bump electrodes located on an outermost periphery of said semiconductor chip, the first resin is surrounded by the bump electrodes and a maximum particle diameter of said filler in the first resin is smaller than the maximum particle diameter of the filler in the second resin.
Claim 9
Dependent Claim
109 words
A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through bump electrodes to the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip being encapsulated with a resin containing a filler, wherein the resin comprises a first resin and a second resin which are divided by the bump electrodes located on an outermost periphery of said semiconductor chip, the first resin is surrounded by the bump electrodes and a maximum particle diameter of said filler in the first resin is smaller than the maximum particle diameter of the filler in the second resin.
Claim 10
Dependent Claim
43 words
The semiconductor device according to claim 7, wherein said maximum particle diameter of the filler in the first resin is 7 μm to 45 μm and said maximum particle diameter of the filler in the second resin is 15 μm to 60 μm.
Claim 11
Dependent Claim
43 words
The semiconductor device according to claim 7, wherein said maximum particle diameter of the filler in the first resin is 15 μm to 40 μm and said maximum particle diameter of the filler in the second resin is 30 μm to 50 μm.
Claim 12
Dependent Claim
31 words
The semiconductor device according to claim 7, wherein the content of at least one of sodium ions and chlorine ions is lower in the first resin than in the second resin.
Claim 13
Dependent Claim
51 words
The semiconductor device according to claim 10, wherein the content of sodium ions and chlorine ions in the first resin is 1 ppm or less and 5 ppm or less, respectively, and the content of each of sodium ions and chlorine ions in the second resin is 10 ppm or less.
Claim 14
Dependent Claim
27 words
The semiconductor device according to claim 7, wherein the first resin has a higher coefficient of thermal expansion and a lower elastic modulus than the second resin.
Claim 15
Dependent Claim
109 words
A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through bump electrodes to the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip is encapsulated with a resin containing a filler, wherein the resin comprises a first resin and a second resin which are divided by the bump electrodes located on an outermost periphery of said semiconductor chip, the first resin is surrounded by the bump electrodes and an average particle diameter of said filler in the first resin is smaller than the average particle diameter of the filler in the second resin.
Claim 16
Dependent Claim
109 words
A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through bump electrodes to the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip is encapsulated with a resin containing a filler, wherein the resin comprises a first resin and a second resin which are divided by the bump electrodes located on an outermost periphery of said semiconductor chip, the first resin is surrounded by the bump electrodes and an average particle diameter of said filler in the first resin is smaller than the average particle diameter of the filler in the second resin.
Claim 17
Dependent Claim
43 words
The semiconductor device according to claim 13, wherein said average particle diameter of the filler in the first resin is 5 μm to 25 μm and said average particle diameter of the filler in the second resin is 10 μm to 45 μm.
Claim 18
Dependent Claim
43 words
The semiconductor device according to claim 13, wherein said average particle diameter of the filler in the first resin is 7 μm to 20 μm and said average particle diameter of the filler in the second resin is 15 μm to 40 μm.
Claim 19
Dependent Claim
31 words
The semiconductor device according to claim 13, wherein the content of at least one of sodium ions and chlorine ions is lower in the first resin than in the second resin.
Claim 20
Dependent Claim
51 words
The semiconductor device according to claim 16, wherein the content of sodium ions and chlorine ions in the first resin is 1 ppm or less and 5 ppm or less, respectively, and the content of each of sodium ions and chlorine ions in the second resin is 10 ppm or less.
Claim 21
Dependent Claim
27 words
The semiconductor device according to claim 13, wherein the first resin has a higher coefficient of thermal expansion and a lower elastic modulus than the second resin.