Patent US5859470A successfully refreshed from Google Patents.
US5859470A
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Interconnection of a carrier substrate and a semiconductor device
Assignee: International Business Machines Corp
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Filing: 1992-11-12
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Granted: 1999-01-12
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Expires: 2012-11-12
Abstract
Abstract Solder interconnection for forming connections between an integrated semiconductor device and a carrier substrate is provided. Located on the carrier substrate are electrodes and located between the electrodes and integrated semiconductor device are solder connections that have a relatively low melting point such that when the device is in operation, the solder connection will liquify thereby permitting expansion compensation between the substrate and semiconductor device.
Inventors
- 👤 James Vernon Ellerson
- 👤 Joseph Funari
- 👤 Jack Arthur Varcoe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:57
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/341; H05K3/3431; H05K3/3436; H10; H10W; H10W72/00; H10W74/00; H10W74/01; H10W74/012; H10W74/10; H10W74/15; H10W95/00; H05K2201/00; H05K2201/10; H05K2201/10613; H05K2201/10954; H05K2201/10977; H05K2201/10992; H05K3/303; H05K3/305; H05K3/3452; H05K3/346; H10W72/01; H10W72/012; H10W72/01221; H10W72/01223; H10W72/013; H10W72/01331; H10W72/01336; H10W72/071; H10W72/072; H10W72/07202; H10W72/07231; H10W72/07236; H10W72/073; H10W72/07331; H10W72/20; H10W72/251; H10W72/252; H10W72/30; H10W72/331; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/851; H10W72/853; H10W72/856; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734; Y; Y02; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
129 words
A solder interconnection for forming connections between an integrated semiconductor device and a carrier substrate comprising a carrier substrate having electrodes thereon; and semiconductor device; and a plurality of solder connections located between said electrodes and semiconductor device wherein the melting point of said plurality of solder connections is such that said plurality of solder connections will liquify at temperatures to which the interconnections are subjected during use and is solid at room temperature and wherein said solder connections do not react with copper to the extent that would adversely affect copper, and wherein said solder connections contain about 44.5 to about 44.7% bismuth; about 22.5 to about 22.7% lead about 8.0 to about 8.3% tin, about 5.0 to about 5.3% cadmium, and about 17.5 to about 18.1% indium.
Claim 2
Dependent Claim
129 words
A solder interconnection for forming connections between an integrated semiconductor device and a carrier substrate comprising a carrier substrate having electrodes thereon; and semiconductor device; and a plurality of solder connections located between said electrodes and semiconductor device wherein the melting point of said plurality of solder connections is such that said plurality of solder connections will liquify at temperatures to which the interconnections are subjected during use and is solid at room temperature and wherein said solder connections do not react with copper to the extent that would adversely affect copper, and wherein said solder connections contain about 44.5 to about 44.7% bismuth; about 22.5 to about 22.7% lead about 8.0 to about 8.3% tin, about 5.0 to about 5.3% cadmium, and about 17.5 to about 18.1% indium.
Claim 3
Dependent Claim
171 words
A solder interconnection for forming connections between an integrated semiconductor device and a carrier substrate comprising a carrier substrate having electrodes thereon; and semiconductor device; and a plurality of solder connections located between said electrodes and semiconductor device wherein the melting point of said plurality of solder connections is such that said plurality of solder connections will liquify at temperatures to which the interconnections are subjected during use and is solid at room temperature and wherein said solder connections do not react with copper to the extent that would adversely affect copper, and which further comprises an adhesive material located between said low melting solder connections and said electrodes, and wherein said adhesive material has vias that correspond to said solder connections, and wherein said solder connections have a melting point from about 110° to about 120° F. and contain about 44.5 to about 44.7% bismuth; about 22.5 to about 22.7% lead, about 8.0 to about 8.3% tin, about 5.0 to about 5.3% cadmium, and about 17.5 to about 18.1% indium.
Claim 4
Dependent Claim
171 words
A solder interconnection for forming connections between an integrated semiconductor device and a carrier substrate comprising a carrier substrate having electrodes thereon; and semiconductor device; and a plurality of solder connections located between said electrodes and semiconductor device wherein the melting point of said plurality of solder connections is such that said plurality of solder connections will liquify at temperatures to which the interconnections are subjected during use and is solid at room temperature and wherein said solder connections do not react with copper to the extent that would adversely affect copper, and which further comprises an adhesive material located between said low melting solder connections and said electrodes, and wherein said adhesive material has vias that correspond to said solder connections, and wherein said solder connections have a melting point from about 110° to about 120° F. and contain about 44.5 to about 44.7% bismuth; about 22.5 to about 22.7% lead, about 8.0 to about 8.3% tin, about 5.0 to about 5.3% cadmium, and about 17.5 to about 18.1% indium.
Claim 5
Dependent Claim
141 words
A solder interconnection for forming connections between an integrated semiconductor device and a carrier substrate comprising a carrier substrate having electrodes thereon; and semiconductor device; and a plurality of solder connections located between said electrodes and semiconductor device wherein the melting point of said plurality of solder connections is such that said plurality of solder connections will liquify at temperatures to which the interconnections are subjected during use and is solid at room temperature and wherein said solder connections do not react with copper to the extent that would adversely affect copper, and wherein said solder connections have a melting point from about 110° to about 120° F. and contain about 44.5 to about 44.7% bismuth; about 22.5 to about 22.7% lead, about 8.0 to about 8.3% tin, about 5.0 to about 5.3% cadmium, and about 17.5 to about 18.1% indium.
Claim 6
Dependent Claim
141 words
A solder interconnection for forming connections between an integrated semiconductor device and a carrier substrate comprising a carrier substrate having electrodes thereon; and semiconductor device; and a plurality of solder connections located between said electrodes and semiconductor device wherein the melting point of said plurality of solder connections is such that said plurality of solder connections will liquify at temperatures to which the interconnections are subjected during use and is solid at room temperature and wherein said solder connections do not react with copper to the extent that would adversely affect copper, and wherein said solder connections have a melting point from about 110° to about 120° F. and contain about 44.5 to about 44.7% bismuth; about 22.5 to about 22.7% lead, about 8.0 to about 8.3% tin, about 5.0 to about 5.3% cadmium, and about 17.5 to about 18.1% indium.
References Cited (Backward Citations)
US4345371A
Cited
DE3232659A1
Cited
US4724472A
Cited
US4725924A
Cited
JPS63155790A
Cited
DE3729789A1
Cited
US4927697A
Cited
US4847136A
Cited
US4999699A
Cited
US5089440A
Cited
US5121190A
Cited
US5147084A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-01-11 | 2002-07-13 | 2003-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-11 | 2006-07-13 | 2007-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-11 | 2010-07-13 | 2011-01-12 | $7700.00 | Window Closed / Lapsed |