US5858872A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal contact structure in semiconductor device, and a method of forming the same
Assignee: Chung Cheng Holding LLC
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Filing: 1995-08-04
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Granted: 1999-01-12
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Expires: 2015-08-04
Abstract
Abstract A process of forming a metal contact portion of a semiconductor device and a structure thereof are disclosed. The process includes the steps of forming an insulating layer on a semiconductor substrate in which a doped junction has been formed, photo-etching the insulating layer to form a contact hole, forming a conductive layer on a surface of the substrate so that the conductive layer contacts the contact portion through the contact hole, and photo-etching the conductive layer to form a conductive projected portion, whereby a metal layer can contact surfaces of the conductive projected portion and the contact portion of the substrate.
Inventors
- 👤 Hyun Sook Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 00:04
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
94 words
A process of forming a metal contact portion of a semiconductor device, comprising the steps of: forming a semiconductor substrate having a doped junction; forming an insulating layer on the semiconductor substrate; removing portions of the insulating layer to define a contact hole therethrough; forming a conductive projected portion on a portion of the doped junction using a photoresist pattern with a width less than a width of the contact hole; and forming a metal layer in the contact hole so that the metal layer contacts the doped junction and the conductive projected portion.
Claim 2
Dependent Claim
94 words
A process of forming a metal contact portion of a semiconductor device, comprising the steps of: forming a semiconductor substrate having a doped junction; forming an insulating layer on the semiconductor substrate; removing portions of the insulating layer to define a contact hole therethrough; forming a conductive projected portion on a portion of the doped junction using a photoresist pattern with a width less than a width of the contact hole; and forming a metal layer in the contact hole so that the metal layer contacts the doped junction and the conductive projected portion.
Claim 3
Dependent Claim
63 words
The process as claimed in claim 1, wherein said step of forming a conductive projected portion includes the steps of: depositing a conductive layer on surfaces of the doped junction and the insulating layer, forming a photoresist pattern on the conductive layer, removing portions of the conductive layer using the photoresist pattern to form the conductive projected portion, and removing the photoresist pattern.
Claim 4
Dependent Claim
16 words
The process as claimed in claim 2, wherein the conductive layer is deposited with polycrystalline silicon.
Claim 5
Dependent Claim
37 words
The process as claimed in claim 1, wherein said step of removing portions of the insulating layer exposes a surface of the doped junction, wherein an unexposed surface of the doped junction contacts the conductive projected portion.
Claim 6
Dependent Claim
21 words
The process as claimed in claim 1, further comprising the step of: forming a metal wiring pattern on the metal layer.
Claim 7
Dependent Claim
25 words
The process as claimed in claim 1, wherein the conductive projected portion projects from the doped junction within a middle portion of the contact hole.
Claim 8
Dependent Claim
16 words
The process as claimed in claim 1, wherein the conductive projected portion has a cylindrical configuration.
Claim 9
Dependent Claim
21 words
The process as claimed in claim 1, wherein the entire conductive projected portion occupies an inner portion of the contact hole.
Claim 10
Dependent Claim
30 words
The process as claimed in claim 1, wherein the step of forming a semiconductor substrate includes the step of: doping an upper surface of the semiconductor substrate with impurity ions.
Claim 11
Dependent Claim
26 words
The process as claimed in claim 2, wherein the step of depositing a conductive layer includes the step of: doping the conductive layer with impurity ions.
Claim 12
Dependent Claim
31 words
The process as claimed in claim 2, wherein the step of removing portions of the conductive layer is performed by photoetching the conductive layer using the photoresist pattern as a mask.
Claim 13
Dependent Claim
33 words
The process as claimed in claim 1, wherein a bottom surface of the conductive projected portion, which contacts the doped junction, is smaller in size than a top surface of the doped junction.
Claim 14
Dependent Claim
47 words
The process as claimed in claim 1, wherein the conductive projected portion contacts the doped junction through an inner portion of the contact hole, whereby a contact area of the metal layer is increased and electrical resistance between the doped junction and the metal layer is reduced.
Claim 15
Dependent Claim
33 words
The process of claim 1, wherein the step of forming a metal layer includes the step of: completely filling the contact hole having the conductive protected portion formed therein with the metal layer.
Claim 16
Dependent Claim
26 words
The method as claimed in claim 1, wherein the metal layer is formed in the contact hole and on opposite sides of the conductive projected portion.
Claim 17
Independent Claim
71 words
A method of forming a metal contact of a semiconductor device comprising the steps of: forming a substrate having a doped junction; forming an insulating layer pattern on the substrate to define a contact hole; forming a conductive projection on a portion of the doped junction; and forming a metal layer on opposite sides of the conductive projection so that the metal layer contacts the doped junction and the conductive projection.
Claim 18
Independent Claim
71 words
A method of forming a metal contact of a semiconductor device comprising the steps of: forming a substrate having a doped junction; forming an insulating layer pattern on the substrate to define a contact hole; forming a conductive projection on a portion of the doped junction; and forming a metal layer on opposite sides of the conductive projection so that the metal layer contacts the doped junction and the conductive projection.
Claim 19
Dependent Claim
28 words
The method as claimed in claim 16, wherein the conductive projection is formed using a photoresist mask with a width less than a width of the contact hole.
Claim 20
Dependent Claim
16 words
The method as claimed in claim 17, wherein the conductive projection is composed of polycrystalline silicon.
Claim 21
Dependent Claim
21 words
The method as claimed in claim 16, further comprising the step of: forming a metal wiring pattern on the metal layer.
Claim 22
Dependent Claim
24 words
The method as claimed in claim 16, wherein the conductive projection is doped with a same type of impurity ions as the doped junction.
Claim 23
Dependent Claim
16 words
The method as claimed in claim 16, wherein the conductive projection has a substantially cylindrical shape.
Claim 24
Dependent Claim
29 words
The process as claimed in claim 10, wherein the conductive layer is doped with a same type of impurity ions present in the doped junction of the semiconductor substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-11 | 2002-07-13 | 2003-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-11 | 2006-07-13 | 2007-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-11 | 2010-07-13 | 2011-01-12 | $7700.00 | Window Closed / Lapsed |