Patent US3762854A successfully refreshed from Google Patents.
Patent US5858843A successfully refreshed from Google Patents.
US5858843A
Expired / Lapsed
US
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Low temperature method of forming gate electrode and gate dielectric
Assignee: Intel Corp
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Filing: 1996-09-27
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Granted: 1999-01-12
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Expires: 2016-09-27
Abstract
Abstract A method of forming a field effect transistor structure for making semiconductor integrated circuits is disclosed. The method utilizes a novel processing sequence where the high temperature processing steps are carried out prior to the formation of the gate dielectric and gate electrode. The process sequence proceeds as follows: A mask patterned in replication of a to-be-formed gate is deposited onto a substrate. Then, a high temperature step of forming doped regions is performed. Then, a high temperature step of forming a silicide is performed. Next, a planarization material is deposited over the mask and is planarized. The mask is removed selectively to the planarization material to form an opening within the planarization material. The gate dielectric and gate electrode are formed within the opening.
Inventors
- 👤 Brian S. Doyle
- 👤 David B. Fraser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:06
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D30/701; H10D64/01304; H10D64/01316; H10D64/01318; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/017
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
92 words
A method of forming an integrated circuit device transistor structure on a substrate, comprising the steps of: forming a selectively removable mask in accordance with the dimensions of a to-be-formed transistor gate; forming a first doped region within the substrate in alignment with said mask; depositing a spacer material over said mask; forming spacer structures from the spacer material in alignment with said mask; forming a second doped region within the substrate using said spacer structures as a doping mask; forming a planarization material over said mask; and planarizing the planarization material.
Claim 2
Independent Claim
92 words
A method of forming an integrated circuit device transistor structure on a substrate, comprising the steps of: forming a selectively removable mask in accordance with the dimensions of a to-be-formed transistor gate; forming a first doped region within the substrate in alignment with said mask; depositing a spacer material over said mask; forming spacer structures from the spacer material in alignment with said mask; forming a second doped region within the substrate using said spacer structures as a doping mask; forming a planarization material over said mask; and planarizing the planarization material.
Claim 3
Dependent Claim
35 words
A method of forming an integrated circuit device structure as in claim 1, further comprising the step of selectively removing said mask relative to the planarization material and the spacer material to form an opening.
Claim 4
Dependent Claim
26 words
A method of forming an integrated circuit device structure as in claim 2, further comprising the step of forming a transistor gate stack within said opening.
Claim 5
Independent Claim
113 words
A method of forming an integrated circuit device transistor structure, comprising the steps of: providing a substrate; forming a mask material on said substrate; patterning said mask material to form a mask having substantially vertical and continuous sidewalls; forming a doped region within said substrate in alignment with said mask; forming a planarization material over said mask; planarizing said planarization material such that the top surface of said planarization material is at substantially the same level as the top surface of said mask; selectively removing said mask so as to create an opening in said planarization material; forming within said opening a gate dielectric; and forming a gate electrode on said gate dielectric.
Claim 6
Independent Claim
113 words
A method of forming an integrated circuit device transistor structure, comprising the steps of: providing a substrate; forming a mask material on said substrate; patterning said mask material to form a mask having substantially vertical and continuous sidewalls; forming a doped region within said substrate in alignment with said mask; forming a planarization material over said mask; planarizing said planarization material such that the top surface of said planarization material is at substantially the same level as the top surface of said mask; selectively removing said mask so as to create an opening in said planarization material; forming within said opening a gate dielectric; and forming a gate electrode on said gate dielectric.
Claim 7
Dependent Claim
36 words
A method of forming an integrated circuit device transistor structure as in claim 4, wherein said step of forming said gate dielectric further comprises: depositing said gate dielectric within said opening using selective chemical vapor deposition.
Claim 8
Dependent Claim
63 words
A method of forming an integrated circuit device transistor structure as in claim 4, wherein said step of forming said gate dielectric further comprises: forming a layer of gate dielectric over the entire surface of said structure including within said opening; planarizing said layer of gate dielectric; and etching said gate dielectric within said opening to a preselected thickness of said gate dielectric.
Claim 9
Dependent Claim
38 words
A method of forming an integrated circuit device transistor structure as in claim 4, wherein said step of forming a gate electrode further comprises: depositing said gate electrode directly on said gate dielectric using selective chemical vapor deposition.
Claim 10
Dependent Claim
53 words
A method of forming an integrated circuit device transistor structure as in claim 4, wherein said step of forming a gate electrode further comprises: forming a layer of gate electrode over the entire surface of said structure including within said opening and directly on said gate dielectric; and planarizing said gate electrode layer.
Claim 11
Dependent Claim
22 words
A method of forming an integrated circuit device transistor structure as in claim 4, wherein said gate dielectric is a ferroelectric material.
Claim 12
Dependent Claim
52 words
A method of forming an integrated circuit device transistor structure as in claim 4, wherein said gate dielectric is a material selected from the group comprising silicon dioxide, silicon nitride, barium strontium titanate, lead zirconate titanate, aluminum oxide, tantalum pentoxide, bismuth strontium titanate, spin on glass, organic polymer, and barium magnesium fluoride.
Claim 13
Dependent Claim
23 words
A method of forming an integrated circuit device transistor structure as in claim 4, where in said gate electrode is a metallic material.
Claim 14
Dependent Claim
36 words
A method of forming an integrated circuit device transistor structure as in claim 11, where in said gate electrode is a material selected from the group comprising aluminum, aluminum alloy, titanium, titanium alloy and titanium nitride.
Claim 15
Dependent Claim
40 words
A method of forming an integrated circuit device transistor structure as in claim 4, further comprising the steps of: depositing a metallic material onto said structure; and forming a silicide where said metallic material and silicon come into direct contact.
Claim 16
Independent Claim
157 words
A method of forming an integrated circuit device transistor structure, comprising the steps of: providing a substrate; forming a mask material on said substrate; patterning said mask material to form a mask; forming a first doped region within said substrate in alignment with said mask; forming a spacer adjacent said mask of a material that is different from the mask material, said spacer being formed after patterning said mask material; forming a second doped region within said substrate adjacent to said spacer; forming a planarization material over said mask and spacer; planarizing said planarization material so that the top surface of said planarization material is substantially level with the top surface of said mask; selectively removing said mask so as to create a clean opening in said spacer and planarization material, said opening having a substantially similar shape as said mask; forming within said opening a gate dielectric; and forming a gate electrode on said gate dielectric.
Claim 17
Independent Claim
157 words
A method of forming an integrated circuit device transistor structure, comprising the steps of: providing a substrate; forming a mask material on said substrate; patterning said mask material to form a mask; forming a first doped region within said substrate in alignment with said mask; forming a spacer adjacent said mask of a material that is different from the mask material, said spacer being formed after patterning said mask material; forming a second doped region within said substrate adjacent to said spacer; forming a planarization material over said mask and spacer; planarizing said planarization material so that the top surface of said planarization material is substantially level with the top surface of said mask; selectively removing said mask so as to create a clean opening in said spacer and planarization material, said opening having a substantially similar shape as said mask; forming within said opening a gate dielectric; and forming a gate electrode on said gate dielectric.
Claim 18
Dependent Claim
25 words
A method of forming an integrated circuit device transistor structure as in claim 14, wherein said spacer and said planarization material comprise the same material.
Claim 19
Dependent Claim
24 words
A method of forming an integrated circuit device transistor structure as in claim 15, wherein said spacer and said planarization material comprise silicon nitride.
Claim 20
Dependent Claim
22 words
A method of forming an integrated circuit device transistor structure as in claim 14, wherein said spacer is comprised of silicon nitride.
Claim 21
Dependent Claim
41 words
A method of forming an integrated circuit device transistor structure as in claim 14, further comprising the steps of: depositing a metallic material onto said structure; and forming a silicide where the metallic material and the silicon come into direct contact.
Claim 22
Independent Claim
96 words
A method of forming an integrated circuit device transistor structure on a substrate, comprising the steps of: forming a mask in accordance with the dimensions of a to-be-formed gate stack; forming a first doped region in the substrate in alignment with the mask; depositing a spacer material over the mask; forming a spacer structure adjacent the mask by etching said spacer material; forming a second doped region in alignment with the spacer structure; removing the mask after formation of the doped regions so as to create an opening; and forming a gate stack within the opening.
Claim 23
Independent Claim
96 words
A method of forming an integrated circuit device transistor structure on a substrate, comprising the steps of: forming a mask in accordance with the dimensions of a to-be-formed gate stack; forming a first doped region in the substrate in alignment with the mask; depositing a spacer material over the mask; forming a spacer structure adjacent the mask by etching said spacer material; forming a second doped region in alignment with the spacer structure; removing the mask after formation of the doped regions so as to create an opening; and forming a gate stack within the opening.
Claim 24
Independent Claim
62 words
A method of forming an integrated circuit device transistor on a substrate, comprising the steps of: forming a mask directly on the substrate, said mask having substantially vertical and continuous sidewalls; forming a doped region in the substrate in alignment with the mask; forming a silicide on preslected portions of said substrate; and forming a planarization layer after formation of said silicide.
Claim 25
Independent Claim
62 words
A method of forming an integrated circuit device transistor on a substrate, comprising the steps of: forming a mask directly on the substrate, said mask having substantially vertical and continuous sidewalls; forming a doped region in the substrate in alignment with the mask; forming a silicide on preslected portions of said substrate; and forming a planarization layer after formation of said silicide.
Claim 26
Dependent Claim
41 words
A method of forming an integrated circuit device transistor structure on a substrate as in claim 20, further comprising the step of: removing said mask after formation of said planarization layer so as to create an opening in said planarization layer.
Claim 27
Dependent Claim
29 words
A method of forming an integrated circuit device transistor structure on a substrate as in claim 21, further comprising the step of: forming a gate stack within said opening.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-11 | 2002-07-13 | 2003-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-11 | 2006-07-13 | 2007-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-11 | 2010-07-13 | 2011-01-12 | $7700.00 | Window Closed / Lapsed |