US5846847A
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Method of manufacturing a ferroelectric device
Assignee: NXP USA Inc
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Filing: 1996-11-07
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Granted: 1998-12-08
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Expires: 2016-11-07
Abstract
Abstract A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) is manufactured from a substrate (11) that has a layer (14) of ferroelectric material sandwiched between a substrate (13) and a layer (16) of silicon. A gate structure (24) is formed on the layer (16) of silicon. A source region is formed in a portion of the layer (16) of silicon adjacent one side of the gate structure (24) and a drain region is formed in a portion of the layer (16) of silicon adjacent an opposing side of the gate structure (24).
Inventors
- 👤 William J. Ooms
- 👤 Jerald A. Hallmark
- 👤 Daniel S. Marshall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:23
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6758; H10D30/701; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
83 words
A method for manufacturing a ferroelectric device, comprising the steps of: providing a semiconductor material; forming a ferroelectric material over the semiconductor material; forming a layer of semiconductor material over the ferroelectric material; forming a gate structure having first and second edges over the layer of semiconductor material; and forming first and second contacts to the layer of semiconductor material, the first contact adjacent the first edge of the gate structure and the second contact adjacent the second edge of the gate structure.
Claim 2
Independent Claim
83 words
A method for manufacturing a ferroelectric device, comprising the steps of: providing a semiconductor material; forming a ferroelectric material over the semiconductor material; forming a layer of semiconductor material over the ferroelectric material; forming a gate structure having first and second edges over the layer of semiconductor material; and forming first and second contacts to the layer of semiconductor material, the first contact adjacent the first edge of the gate structure and the second contact adjacent the second edge of the gate structure.
Claim 3
Dependent Claim
22 words
The method of claim 1, wherein the step of providing the semiconductor material includes providing single crystalline silicon as the semiconductor material.
Claim 4
Dependent Claim
28 words
The method of claim 2, wherein the step of forming the ferroelectric material over the semiconductor material includes epitaxially growing the ferroelectric material on the single crystalline silicon.
Claim 5
Dependent Claim
21 words
The method of claim 1, wherein the step of providing the semiconductor material includes providing doped regions in the semiconductor material.
Claim 6
Dependent Claim
55 words
The method of claim 1, further including the steps of: forming a first doped region in a portion of the layer of semiconductor material adjacent the first edge of the gate structure; and forming a second doped region in a portion of the layer of semiconductor material adjacent the second edge of the gate structure.
Claim 7
Dependent Claim
32 words
The method of claim 5, wherein the steps of forming the first and second doped regions include forming the first and second doped region to extend through the layer of semiconductor material.
Claim 8
Dependent Claim
35 words
The method of claim 1, wherein the step of forming the gate structure includes forming a gate dielectric material over the layer of semiconductor material and forming a gate electrode over the gate dielectric material.
Claim 9
Dependent Claim
24 words
The method of claim 7, wherein the step of forming the gate dielectric material includes forming the gate dielectric material from a ferroelectric material.
Claim 10
Dependent Claim
19 words
The method of claim 7, wherein the step of forming the gate electrode includes forming the electrode from polysilicon.
Claim 11
Dependent Claim
24 words
The method of claim 1, wherein the step of forming first and second contacts includes forming the first and second contacts as ohmic contacts.
Claim 12
Independent Claim
107 words
A method of forming a ferroelectric semiconductor transistor in a multi-layer semiconductor substrate, comprising the steps of: providing a substrate; forming an epitaxially grown layer of ferroelectric material over the substrate; forming a layer of semiconductor material over the ferroelectric material, wherein the substrate, the ferroelectric material, and the layer of semiconductor material cooperate to form the multi-layer semiconductor substrate; forming a gate structure having first and second edges over the layer of semiconductor material; forming source and drain regions in the semiconductor material adjacent respective first and second edges of the gate structure; and forming first and second contacts to the respective source and drain regions.
Claim 13
Independent Claim
107 words
A method of forming a ferroelectric semiconductor transistor in a multi-layer semiconductor substrate, comprising the steps of: providing a substrate; forming an epitaxially grown layer of ferroelectric material over the substrate; forming a layer of semiconductor material over the ferroelectric material, wherein the substrate, the ferroelectric material, and the layer of semiconductor material cooperate to form the multi-layer semiconductor substrate; forming a gate structure having first and second edges over the layer of semiconductor material; forming source and drain regions in the semiconductor material adjacent respective first and second edges of the gate structure; and forming first and second contacts to the respective source and drain regions.
Claim 14
Dependent Claim
20 words
The method of claim 11, wherein the step of providing the substrate includes providing single crystalline silicon as the substrate.
Claim 15
Dependent Claim
25 words
The method of claim 12, wherein the step of forming the ferroelectric material over the substrate includes epitaxially growing the ferroelectric material on the substrate.
Claim 16
Dependent Claim
22 words
The method of claim 12, further including the step of forming a layer of dielectric material over the layer of semiconductor material.
References Cited (Backward Citations)
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