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Patent US5840616A successfully refreshed from Google Patents.
US5840616A
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Method for preparing semiconductor member
Assignee: Canon Inc
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Filing: 1995-09-08
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Granted: 1998-11-24
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Expires: 2015-09-08
Abstract
Abstract A method for preparing a semiconductor member comprises process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on the porous Si substrate; primary bonding process of bonding the porous Si substrate and an insulating substrate via the non-porous Si monocrystalline layer; etching process of etching the porous Si to remove the porous Si by chemical etching after the primary bonding process; and secondary bonding process of strengthening the primary bonding after the etching process.
Inventors
- 👤 Kiyofumi Sakaguchi
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:17
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10P14/00; H10P14/20; H10P14/22; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P90/12; H10P90/15; H10P90/191; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/96; Y10S438/977
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
126 words
A method for producing a semiconductor member comprising the steps of: forming a first substrate having a porous monocrystalline semiconductor layer and a non-porous monocrystalline semiconductor thin film layer; bonding, at a first temperature, said first substrate to an insulating second substrate having a thermal expansion coefficient different from that of said first substrate, to provide a first multi-layer structure wherein said non-porous monocrystalline semiconductor thin film layer is arranged at an inner side thereof; removing said porous monocrystalline semiconductor layer from said first multi-layer structure to form a second multi-layer structure; and thermally processing by heating said second multi-layer structure at a second temperature, higher than the first temperature, to strengthen the bonding between said second substrate and said non-porous monocrystalline semiconductor thin film layer.
Claim 2
Independent Claim
126 words
A method for producing a semiconductor member comprising the steps of: forming a first substrate having a porous monocrystalline semiconductor layer and a non-porous monocrystalline semiconductor thin film layer; bonding, at a first temperature, said first substrate to an insulating second substrate having a thermal expansion coefficient different from that of said first substrate, to provide a first multi-layer structure wherein said non-porous monocrystalline semiconductor thin film layer is arranged at an inner side thereof; removing said porous monocrystalline semiconductor layer from said first multi-layer structure to form a second multi-layer structure; and thermally processing by heating said second multi-layer structure at a second temperature, higher than the first temperature, to strengthen the bonding between said second substrate and said non-porous monocrystalline semiconductor thin film layer.
Claim 3
Dependent Claim
22 words
A method according to claim 1, wherein said non-porous monocrystalline semiconductor thin film layer has a thickness of 100 μm or less.
Claim 4
Dependent Claim
42 words
A method according to claim 1, further comprising a step of oxidizing a surface of said non-porous monocrystalline semiconductor thin film layer to form an oxide film, wherein said oxidizing step is performed before bonding said first substrate to said second substrate.
Claim 5
Dependent Claim
24 words
A method according to claim 1, wherein said first and second substrates are bonded through a van der Waals force at a room temperature.
Claim 6
Dependent Claim
16 words
A method according to claim 1, wherein the second temperature is within a range 200°-800° C.
Claim 7
Dependent Claim
17 words
A method according to claim 1, wherein the thermal processing is conducted in an atmosphere of oxygen.
Claim 8
Dependent Claim
18 words
A method according to claim 1, wherein the thermal processing is conducted in an atmosphere of a nitrogen.
Claim 9
Dependent Claim
14 words
A method according to claim 1, wherein said second substrate comprises an insulating substrate.
Claim 10
Dependent Claim
15 words
A method according to claim 1, wherein said second substrate comprises a light transmissive substrate.
Claim 11
Dependent Claim
14 words
A method according to claim 9, wherein said second substrate comprises a glass substrate.
Claim 12
Dependent Claim
39 words
A method according to claim 1, including forming said first substrate by modifying a monocrystalline semiconductor substrate into a porous microcrystalline semiconductor layer, and growing epitaxially said non-porous monocrystalline semiconductor thin film layer on said porous monocrystalline semiconductor layer.
Claim 13
Dependent Claim
42 words
A method according to claim 11, wherein said non-porous monocrystalline semiconductor thin film layer is formed on the porous monocrystalline semiconductor layer by molecular beam epitaxy, plasma chemical vapor deposition, pressure-reduced chemical vapor deposition, bias sputtering or growing in a liquid phase.
Claim 14
Dependent Claim
56 words
A method according to claim 1, wherein said first substrate is formed by a step of counterdoping a surface of a high carrier concentration monocrystalline semiconductor substrate to form said non-porous monocrystalline semiconductor thin film layer having a low carrier concentration, and a step of anodizing the remaining monocrystalline semiconductor substrate to make said substrate porous.
Claim 15
Dependent Claim
49 words
A method according to claim 1, wherein said first substrate is formed by a step of injecting protons into a surface of a p-type monocrystalline semiconductor substrate to form a non-porous monocrystalline semiconductor thin film layer of an n-type, and a step of anodizing the remaining monocrystalline semiconductor substrate.
Claim 16
Dependent Claim
17 words
A method according to claim 1, wherein said porous monocrystalline semiconductor layer is removed by chemical etching.
Claim 17
Dependent Claim
34 words
A method according to claim 15, wherein said porous monocrystalline semiconductor layer comprises a porous silicon monocrystalline layer and said porous silicon microcrystalline layer is removed by etching using an etchant comprising hydrofluoric acid.
Claim 18
Dependent Claim
13 words
A method according to claim 16, wherein said etchant further comprises ammonium fluoride.
Claim 19
Dependent Claim
13 words
A method according to claim 17, wherein said etchant further comprises hydrogen peroxide.
Claim 20
Dependent Claim
12 words
A method according to claim 18, wherein said etchant further comprises alcohol.
Claim 21
Dependent Claim
12 words
A method according to claim 17, wherein said enchant further comprises alcohol.
Claim 22
Dependent Claim
13 words
A method according to claim 16, wherein said etchant further comprises hydrogen peroxide.
Claim 23
Dependent Claim
12 words
A method according to claim 21, wherein said etchant further comprises alcohol.
Claim 24
Dependent Claim
12 words
A method according to claim 16, wherein said etchant further comprises alcohol.
Claim 25
Dependent Claim
46 words
A method according to claim 15, further comprising the steps of: forming an etching prevention film on a surface of said first multi-layer structure before the removing of said porous monocrystalline semiconductor layer, and after removing the porous monocrystalline semiconductor layer, removing the etching prevention film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-23 | 2002-05-25 | 2002-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-23 | 2006-05-25 | 2006-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-23 | 2010-05-25 | 2010-11-24 | $7700.00 | Window Closed / Lapsed |